DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low Gate Threshold Voltage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • General Purpose Interfacing Switch Power Management Functions Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) • • • Drain U-DFN2020-6 Type E Gate Gate Protection Diode Bottom View ESD PROTECTED Source Equivalent Circuit Pin Out Ordering Information (Note 4) Marking N6 N6 Part Number DMN2013UFDE-7 DMN2013UFDE-13 Notes: Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information N6 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2013UFDE Datasheet number: DS35701 Rev. 5 - 2 Mar 3 YM ADVANCE INFORMATION Product Summary N6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D May 2012 © Diodes Incorporated DMN2013UFDE Maximum Ratings @TA = 25°C unless otherwise specified ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 6) VGS = 2.5V Steady State t<10s ID Value 20 ±8 10.5 8.5 ID 12.5 10.0 A ID 9.4 7.5 A A 11.2 8.8 80 2.5 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Units V V IDM IS A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol TA = 25°C TA = 70°C Steady state t<10s TA = 25°C TA = 70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 ±2 V μA μA VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.1 11 13 1.2 V Static Drain-Source On-Resistance 8.4 9.8 10 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 8.5A VGS = 2.5V, ID = 8.5A VDS = 5V, ID = 4A VGS = 0V, IS = 8.5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 2453 275 257 1.2 14.3 25.8 1.8 2.1 9.9 24.5 66.4 20.8 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing DMN2013UFDE Datasheet number: DS35701 Rev. 5 - 2 2 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN2013UFDE 30 20 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 15 10 15 10 TA = 150°C TA = 125°C 5 TA = 85°C 5 T A = 25°C TA = -55°C 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 2 VGS, GATE-SOURCE VOLTAGE Fig.2 Typical Transfer Characteristics 0.020 0.015 VGS = 1.5V 0.010 VGS = 1.8V VGS = 2.5V VGS = 4.5V 0.005 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 5A VGS = 4.5V ID = 10A 1.0 0.8 0.6 50 VGS = 4.5V 0.015 TA = 125°C 0.010 TA = 25°C DMN2013UFDE TA = -55°C 0.005 0 5 10 15 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.020 0.015 VGS = 2.5V ID = 5A 0.010 VGS = 4.5V ID = 10A 0.005 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature Datasheet number: DS35701 Rev. 5 - 2 TA = 150°C TA = 85°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.2 0.020 20 1.8 1.4 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 25 3 of 6 www.diodes.com 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature May 2012 © Diodes Incorporated DMN2013UFDE IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 1.2 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 15 T A = 25°C 10 5 0.2 0 -50 0 10,000 10 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Ciss 1,000 Coss Crss f = 1MHz 100 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 20 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 VDS = 10V, ID = 8.5A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate Charge 40 100 RDS(on) Limited ID, DRAIN CURRENT (A) ADVANCE INFORMATION 1.4 PW = 100µs 10 DC 1 PW = 10s PW = 1s 0.1 T J(max) = 150°C PW = 100ms PW = 10ms PW = 1ms TA = 25°C VGS = 8V Single Pulse DUT on 1 * MRP Board 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMN2013UFDE Datasheet number: DS35701 Rev. 5 - 2 100 4 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN2013UFDE r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 65°C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm Suggested Pad Layout Dimensions Y3 Y2 X2 Y1 X1 X (6x) DMN2013UFDE Datasheet number: DS35701 Rev. 5 - 2 C C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 5 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN2013UFDE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com DMN2013UFDE Datasheet number: DS35701 Rev. 5 - 2 6 of 6 www.diodes.com May 2012 © Diodes Incorporated