DMP6023LSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V(BR)DSS Features and Benefits ID max TA = +25°C RDS(ON) max 25mΩ @ VGS = -10V -6.6A 33mΩ @ VGS = -4.5V -5.8A -60V Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Below Power Management Functions DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 Top View S D S D S D G D G S TOP VIEW Equivalent Circuit Ordering Information (Note 4) Part Number DMP6023LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking P6023LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 - 53) P6023LS YY WW 1 DMP6023LSS Document number: DS37198 Rev. 2 - 2 4 1 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP6023LSS Maximum Ratings (@TA = +25°C unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C Continuous Drain Current (Note 6) VGS = -10V Value -60 ±20 -6.6 -5.3 -50 -1.8 -35.5 62.9 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH IDM IS IAS EAS Units V V A A A A mJ Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA RJC TJ, TSTG Value 1.2 100 1.6 75 12 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) -3 25 33 -1.2 mΩ VSD — — — -0.7 V Static Drain-Source On-Resistance -1 — — — VDS = VGS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr — — — — — — — — — — — — — 2569 179 143 8 26.5 53.1 7.1 12.6 6 7.1 110 62 20 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns nS Qrr — 14 — nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V,) Total Gate Charge (VGS = -10V), Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: V Test Condition VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP6023LSS Document number: DS37198 Rev. 2 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP6023LSS 30 30 Vds=-5.0V VGS = -3.5V VGS = -4.0V 20 ID, DRAIN CURRENT (A) Id , DRAIN CURRENT (A) 25 VGS = -4.5V VGS = -5.0V 15 VGS = -10V 10 VGS = -3.0V TA = 150°C 20 TA = 125°C 15 10 T A = 85°C TA = 25°C 5 5 VGS = -2.8V 0 0 5 0.03 VGS = -4.5V 0.025 0.02 VGS = -10V 0.015 0.01 0.005 0 0 5 10 15 20 25 I D, DRAIN-SOURCE CURRENT Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V gs, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.05 5 0.2 0.18 0.16 0.14 0.12 0.1 I D = -5.0A 0.08 0.06 I D = -4.0A 0.04 0.02 0 0 30 2 4 6 8 10 12 14 16 18 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2 VGS = -4.5V TA = 150°C 0.04 T A = 125°C TA = 85°C 0.03 T A = 25°C 0.02 TA = -55°C 0.01 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RD(SON), Drain-Source On-Resistance ( Ω) 0.035 T A = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 1 2 3 4 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) ADVANCE INFORMATION 25 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP6023LSS Document number: DS37198 Rev. 2 - 2 30 3 of 6 www.diodes.com VGS = -10V I D = -10A 1.6 1.4 VGS = -4.5V 1.2 ID = -5.0A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated V GS(TH), GATE THRESHOLD VOLTAGE (V) R DS(o n), DRAI N-SO URCE O N-RESISTANCE ( ) 0.05 0.045 0.04 VGS = -4.5V I D = -5A 0.035 0.03 VGS = -10V 0.025 I D = -10A 0.02 0.015 0.01 0.005 0 -50 3 2.8 2.6 2.4 2.2 2 1.8 I D = -1mA I D = -250µA 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 50 -25 0 25 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 30 10000 f = 1MHz C T, JUNCTION CAPACI TANCE (pF) I S, SOURCE CURRENT (A) 25 T A = 150°C 20 TA = 125°C 15 T A = 85°C 10 T A = 25°C 5 C iss 1000 Coss Crss T A = -55°C 0 0 100 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 1.5 10 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 9 R DS(on) Limited 8 ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP6023LSS 7 6 VDS = -30V 5 I D = -5A 4 3 2 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(m ax) = 150°C TA = 25°C 1 0 0 10 5 10 15 20 25 30 35 40 45 50 Q g, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP6023LSS Document number: DS37198 Rev. 2 - 2 55 4 of 6 www.diodes.com VGS =10V Single Pulse 0.01 DUT on 1 * MRP Board 0.1 PW = 1ms PW = 100µs 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 January 2015 © Diodes Incorporated DMP6023LSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Rthja(t) = r(t) * Rthja D = 0.005 Rthja = 100°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 ADVANCE INFORMATION 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMP6023LSS Document number: DS37198 Rev. 2 - 2 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP6023LSS ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMP6023LSS Document number: DS37198 Rev. 2 - 2 6 of 6 www.diodes.com January 2015 © Diodes Incorporated