DMN3010LK3-13 - Diodes Incorporated

DMN3010LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Green
Product Summary
V(BR)DSS
RDS(ON)
30V
9.5mΩ @ VGS = 10V
11.5mΩ @ VGS = 4.5V
Features
ID
TC = +25°C
43A
39A
density end products
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
Applications
DC-DC Converters

Power Management Functions
Top View
Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability






applications.
Backlighting
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Mechanical Data
performance, making it ideal for high efficiency power management

Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher

Description



Case: TO252-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.33 grams (approximate)
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3010LK3-13
Notes:
Case
TO252
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N3010L
YYWW
DMN3010LK3
Document number: DS36762 Rev. 2 - 2
=Manufacturer’s Marking
N3010L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)
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DMN3010LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Steady
State
Steady
State
Value
30
±20
43
34
ID
A
13.1
10.5
90
28
40
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
Avalanche Energy (Notes 7) L = 0.1mH
Unit
V
V
IDM
IAR
EAR
A
A
A
mJ
Thermal Characteristics
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
t<10s
RθJA
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Value
1.6
78
31
2.4
51
21
4.7
-55 to +150
PD
Steady State
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS(ON)
VSD
—
8
10
0.75
2.5
9.5
11.5
1.0
V
Static Drain-Source On-Resistance
1.0
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 16A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2075
190
138
2.4
16.1
37
6.1
5.9
4.5
19.6
31
10.7
13.7
18.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 15V, ID = 18A
ns
VDS = 15V, VGS = 10V,
RL = 0.83Ω, RGEN = 3Ω,
ns
nC
IF=15A, di/dt=500A/µs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3010LK3
Document number: DS36762 Rev. 2 - 2
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DMN3010LK3
30.0
30
VDS = 5.0V
VGS = 10V
25.0
ID, DRAIN CURRENT (A)
25
VGS = 3.0V
VGS = 5.0V
ID , DRAIN CURRENT (A)
VGS = 4.5V
VGS = 4.0V
20.0
VGS = 3.5V
15.0
VGS = 2.8V
10.0
20
TA = 150°C
15
TA = 125°C
TA = 85°C
10
5.0
TA = 25°C
T A = -55°C
5
VGS = 2.5V
0.0
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.01
0.009
VGS = 4.5V
0.008
0.007
VGS = 10V
0.006
0.005
0.004
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.03
0.027
0.024
0.021
0.018
0.015
ID = 18A
0.012
0.009
ID = 16A
0.006
2
0.02
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
12
2
VGS = 4.5V
0.018
0.016
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
TA = 150°C
0.014
TA = 125°C
0.012
TA = 85°C
0.01
TA = 25°C
0.008
TA = -55°C
0.006
0.004
1.8
VGS = 4.5V
ID = 5A
1.6
1.4
VGS = 10V
ID = 10A
1.2
1
0.8
0.002
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN3010LK3
Document number: DS36762 Rev. 2 - 2
30
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0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
April 2014
© Diodes Incorporated
0.02
2.5
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
DMN3010LK3
0.018
0.016
0.014
VGS = 4.5V
ID = 5A
0.012
0.01
0.008
VGS = 10V
ID = 10A
0.006
0.004
0.002
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
30
2
ID = 1mA
ID = 250µA
1.5
1
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
10000
IS, SOURCE CURRENT (A)
25
T A = 150°C
20
1000
TA = 125°C
T A = 85°C
15
TA = 25°C
T A = -55°C
10
5
0
0
Ciss
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Coss
100
10
0
Crss
f = 1MHz
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
VGS GATE THRESHOLD VOLTAGE (V)
VDS = 15V
ID = 18A
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN3010LK3
Document number: DS36762 Rev. 2 - 2
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DMN3010LK3
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
RJA(t) = r(t) * RJA
RJA = 72°C/W
Duty Cycle, D = t1/ t2
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
TO252
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21


e
2.286


E 6.45 6.70 6.58
E1 4.32


H 9.40 10.41 9.91
L
1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°

All Dimensions in mm
A
b3
c2
L3
A2
D
E1
H
L4
A1
L
e
2X b2
3X b
a
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Y2
C
Y1
X1
DMN3010LK3
Document number: DS36762 Rev. 2 - 2
Z
Dimensions
Z
X1
X2
Y1
Y2
C
E1
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
E1
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMN3010LK3
Document number: DS36762 Rev. 2 - 2
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