DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID TA = +25°C Low Input Capacitance Low On-Resistance 30m @ VGS = 10V 6A Fast Switching Speed 42m @ VGS = 4.5V 5A Totally Lead-Free Finish; RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management Case: TSOT26 applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications DC-DC Converters Power Management Functions Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (approximate) Drain TSOT26 D 1 6 D D 2 5 D G 3 4 S Body Diode Gate Source Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMG6402LVT-7 DMG6402LVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information 6402 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMG6402LVT Document number: DS35831 Rev. 3 - 2 Mar 3 YM ADVANCE INFORMATION NEW PRODUCT V(BR)DSS 30V Features and Benefits 6402 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 2015 C Jul 7 1 of 6 HYPERLINK "http://www.diodes.com" Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D May 2013 © Diodes Incorporated DMG6402LVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s ID Value 30 ±20 6.0 4.8 ID 7.5 5.9 A ID 5.0 4.0 A A 6 4.8 2 31 ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Units V V IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) PD RJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RJC TJ, TSTG Value 1.75 1.1 72 50 23 -55 to +150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1 100 μA VGS(th) Static Drain-Source On-Resistance RDS(ON) |Yfs| VSD 1 1.5 22 32 10 0.75 2 30 42 1.0 Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf 498 52 45 2.4 11.4 1.4 2 3.4 6.2 13.9 2.8 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V nA V m S V Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 7A VGS = 4.5V, ID = 5.6A VDS = 5V, ID = 7A VGS = 0V, IS = 1A pF VDS = 15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 15V, ID = 5.8A nS VDD = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMG6402LVT Document number: DS35831 Rev. 3 - 2 2 of 6 www.diodes.com May 2013 © Diodes Incorporated DMG6402LVT 30 20 VGS = 8.0V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS = 4.0V 20 15 VGS = 3.5V 10 VGS = 3.0V 5 12 8 TA = 150°C TA = 125°C 4 T A = 85°C 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.06 0.05 0.04 VGS = 4.5V VGS = 8.0V 0.02 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.7 1.5 VGS = 4.5V ID = 5A 1.3 VGS = 10V ID = 10A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG6402LVT Document number: DS35831 Rev. 3 - 2 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 0.07 0 0 2 0.08 0.03 T A = 25°C TA = -55°C VGS = 2.5V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VDS = 5V VGS = 2.8V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION NEW PRODUCT 25 3 of 6 www.diodes.com 0.08 VGS = 4.5V TA = 150°C 0.06 T A = 125°C TA = 85°C 0.04 T A = 25°C TA = -55°C 0.02 0 0 4 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.08 0.07 0.06 0.05 VGS = 4.5V ID = 5A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature May 2013 © Diodes Incorporated DMG6402LVT 20 1.6 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 18 ID = 1mA ID = 250µA 1.2 0.8 0.4 14 12 10 T A = 25°C 8 6 4 2 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 C iss 100 Coss Crss f = 1MHz 10 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10 VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 8 4 2 0 30 VDS = 15V ID = 5.8A 6 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 10 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT 2.0 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 54°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMG6402LVT Document number: DS35831 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 May 2013 © Diodes Incorporated DMG6402LVT ADVANCE INFORMATION NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. TSOT26 Dim Min Max Typ A — 1.00 — A1 0.01 0.10 — A2 0.84 0.90 — D — — 2.90 E — — 2.80 E1 — — 1.60 b 0.30 0.45 — c 0.12 0.20 — e — — 0.95 e1 — — 1.90 L 0.30 0.50 — L2 — — 0.25 θ 0° 8° 4° θ1 4° 12° — All Dimensions in mm D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMG6402LVT Document number: DS35831 Rev. 3 - 2 5 of 6 www.diodes.com May 2013 © Diodes Incorporated DMG6402LVT ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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