PHILIPS BFR505

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR505
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFR505
PINNING
• High power gain
PIN
• Low noise figure
DESCRIPTION
Code: N30
• High transition frequency
1
base
• Gold metallization ensures
excellent reliability.
2
emitter
3
collector
3
fpage
DESCRIPTION
1
The BFR505 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV).
2
Top view
MSB003
Fig.1 SOT23.
The transistor is encapsulated in a
plastic SOT23 envelope.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
IC
DC collector current
−
−
18
mA
mW
Ptot
total power dissipation
up to Ts = 135 °C; note 1
−
−
150
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = ic = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
17
−
dB
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
S212
insertion power gain
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
13
14
−
dB
F
noise figure
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
−
2.5
V
IC
DC collector current
continuous
−
18
mA
Ptot
total power dissipation
up to Ts = 135 °C; note 1
−
150
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
from junction to soldering point (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
THERMAL RESISTANCE
260 K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
−
−
ICBO
collector cut-off current
IE = 0; VCB = 6 V
50
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
0.4
−
pF
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.4
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral power
gain (note 1)
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
17
−
dB
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
S212
insertion power gain
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
13
14
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
4
−
dBm
ITO
third order intercept point
note 2
−
10
−
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
MRA718 - 1
MRA719
250
200
handbook,
halfpage
handbook, halfpage
P
tot
(mW)
hFE
200
150
150
100
100
50
50
0
0
50
100
150
0
10−3
200
Ts ( o C)
10−2
10−1
1
10
102
IC (mA)
VCE = 6 V.
Fig.3
Fig.2 Power derating curve.
MRA720
0.4
DC current gain as a function of collector
current.
MRA721
12
handbook, halfpage
Cre
(pF)
VCE = 6V
fT
(GHz)
0.3
8
VCE = 3V
0.2
4
0.1
0
0
2
4
6
8
10
VCB (V)
10−1
Ic = 0; f = 1 MHz.
Tamb = 25 °C; f = 1 GHz.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
September 1995
5
1
10
IC (mA)
Transition frequency as a function of
collector current.
102
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
MRA764
25
MRA765
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
MSG
GUM
15
15
10
10
5
5
0
Gmax
MSG
GUM
0
0
4
8
12
0
4
8
IC (mA)
12
IC (mA)
VCE = 6 V; f = 2 GHz.
VCE = 6 V; f = 900 MHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA767
MRA766
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
GUM
40
40
30
30
MSG
MSG
20
20
10
10
Gmax
0
10
102
103
f (MHz)
0
10
104
10
2
103
f (MHz)
10
VCE = 6 V; Ic = 5 mA.
VCE = 6 V; Ic = 1.25 mA.
Fig.8 Gain as a function of frequency.
September 1995
Gmax
Fig.9 Gain as a function of frequency.
6
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
MRA726
5
handbook, halfpage
Fmin
(dB)
4
BFR505
20
Gass
5 mA
Fmin
(dB) IC = 1.25 mA
4
(dB)
15
f = 900 MHz
MRA727
5
handbook, halfpage
20
Gass
(dB)
15
Gass
1000 MHz
3
2000 MHz
Gass
2
1
2000 MHz
10
3
10
5
2
5
0
1
Fmin
1000 MHz
900 MHz
500 MHz
5 mA
Fmin
0
1.25 mA
0
10−1
1
−5
10
IC (mA)
0
102
VCE = 6 V.
103
VCE = 6 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
90°
pot. unst.
region
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
stability
circle
180°
0.2
0.2
0
0.4
5
Fmin = 1. 2 dB
0.5
ΓOPT
F = 1.5 dB 5
1
0.2
0°
0
F = 2 dB
F = 3 dB
0.2
−135°
0.5
5
2
−45°
1
MRA728
Zo = 50 Ω.
VCE = 6 V; IC = 5 mA; f = 900 MHz.
−90°
Fig.12 Noise circle figure.
September 1995
f (MHz)
−5
104
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
handbook, full pagewidth
90°
pot. unst.
region
1.0
1
135°
0.8
45°
2
0.5
0.6
ΓOPT
Fmin = 1. 9 dB
0.2
stability
circle
180°
0.4
5
0.2
0.2
0
0.5
F = 2.5 dB
1
2
5
0°
0
F = 3 dB
F = 4 dB
0.2
−135°
0.5
5
2
−45°
1
MRA729
Zo = 50 Ω.
VCE = 6 V; IC = 5 mA; f = 2000 MHz.
−90°
Fig.13 Noise circle figure.
September 1995
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
90°
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
3 GHz
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRA722
−90°
VCE = 6 V; IC = 5 mA.
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
180°
15
12
3 GHz
9
6
0°
3
−135°
−45°
−90°
MRA723
VCE = 6 V; IC = 5 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRA724
VCE = 6 V; IC = 5 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
40 MHz
0.2
−135°
5
3 GHz
0.5
0
2
−45°
1
MRA725
−90°
VCE = 6 V; IC = 5 mA.
Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
September 1995
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
12