DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T PINNING FEATURES • High power gain PIN DESCRIPTION • Low noise figure Code: N2 • High transition frequency 1 base • Gold metallization ensures excellent reliability 2 emitter • SOT416 (SC75) envelope. 3 collector DESCRIPTION NPN transistor in a plastic SOT416 (SC75) envelope. 3 handbook, halfpage It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. 1 2 MAM337 Fig.1 SOT416. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCES collector-emitter voltage RBE = 0 − − 15 V IC DC collector current − − 70 mA Ptot total power dissipation up to Ts = 118 °C; note 1 − − 300 mW hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 °C 60 120 250 fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 15 − dB F noise figure Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.1 1.6 dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C up to Ts = 118 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 1999 Oct 18 2 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 118 °C; note 1 190 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCE = 6 V − − 50 hFE DC current gain IC = 20mA; VCE = 6 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1 − Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz − 0.5 − pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.4 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; (note 1) Tamb = 25 °C − 15 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 9 − dB nA pF S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 13 14 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 1.9 − dB PL1 output power at 1 dB gain compression Ic = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C − 17 − dBm ITO third order intercept point note 2 − 26 − dBm Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log --------------------------------------------------------2 2 ( 1 – S 11 ) ( 1 – S22 ) 2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz. 1999 Oct 18 3 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T MRC030 - 1 MRC028 200 400 handbook, halfpage handbook, halfpage Ptot (mW) h FE 300 150 200 100 100 50 0 10−2 0 0 50 100 150 200 10−1 1 Ts ( o C) 102 10 I C (mA) VCE = 6 V; Tj = 25 °C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. MRC021 MRC022 12 handbook,0.7 halfpage C re (pF) handbook, halfpage f T (GHz) 10 0.6 VCE = 8 V 0.5 8 3V 0.4 6 0.3 4 0.2 2 0.1 0 0 0 2 4 6 8 10 VCB (V) 1 10 I C = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. 1999 Oct 18 4 I C (mA) 100 Transition frequency as a function of collector current. Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRC026 25 gain (dB) handbook, halfpage MRC027 20 handbook, halfpage G UM 20 (dB) MSG 18 G max G UM 15 16 VCE = 6 V 10 3V 14 5 12 0 0 10 20 0 10 20 I C (mA) 30 VCE = 6 V; f = 2 GHz; Tamb = 25 °C. VCE = 6 V; f = 900 MHz; Tamb = 25 °C. Fig.6 30 I C (mA) 10 Maximum unilateral power gain as a function of collector current. Fig.7 Gain as a function of collector current. MRC024 50 gain (dB) 40 MRC025 50 handbook, halfpage handbook, halfpage gain (dB) G UM 40 30 G UM MSG 30 MSG 20 20 G max 10 G max 10 0 10−2 10−1 1 f (GHz) 10 0 10−2 I C = 5 mA; VCE = 6 V; Tamb = 25 °C. 1 f (GHz) I C = 20 mA; VCE = 6 V; Tamb = 25 °C. Fig.8 Gain as a function of frequency. 1999 Oct 18 10−1 Fig.9 Gain as a function of frequency. 5 10 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T MRC029 MRC023 4 handbook, halfpage handbook, halfpage F (dB) F (dB) 4 3 3 I C = 20 mA f = 2 GHz 5 mA 2 2 900 MHz 500 MHz 1 1 0 1 10 I C (mA) 0 10−1 102 1 f (GHz) 10 VCE = 6 V; Tamb = 25 °C. VCE = 6 V; Tamb = 25 °C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. 1999 Oct 18 6 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T stability circle handbook, full pagewidth 90° 1.0 1 135° 0.8 45° 2 0.5 pot. unst. region 0.6 0.2 0.4 5 Fmin = 1. 1 dB 0.2 ΓOPT 180° 0.2 0 0.5 1 2 5 0° 0 F = 1.5 dB F = 2 dB 0.2 5 F = 3 dB 0.5 2 −135° −45° 1 MRC077 1.0 −90° I C = 5 mA; VCE = 6 V; f = 900 MHz; Z o = 50 Ω. Fig.12 Noise circle. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 F = 3 dB F = 2.5 dB 0.2 0.4 5 F = 2 dB Fmin = 1. 9 dB 180° 0.2 0 ΓMS Gmax = 9.1 dB 0.2 0.5 ΓOPT 1 0.2 2 5 G = 8,5 dB G = 8 dB 0° 0 5 G = 7 dB 0.5 2 −135° −45° 1 MRC078 −90° I C = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 Ω. Fig.13 Noise circle. 1999 Oct 18 7 1.0 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 3 GHz 180° 0.2 0 0.5 0.2 1 2 5 0° 0 40 MHz 5 0.2 0.5 2 −135° −45° 1 MRC066 −90° IC = 20 mA; VCE = 6 V; Zo = 50 Ω. Fig.14 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 45° 135° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRC067 I C = 20 mA; VCE = 6 V. Fig.15 Common emitter forward transmission coefficient (S21). 1999 Oct 18 8 1.0 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.5 0.4 0.3 0.2 0° 0.1 −135° −45° −90° MRC060 I C = 20 mA; VCE = 6 V. Fig.16 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 3 GHz 5 0.2 0.5 2 −135° −45° 1 MRC061 I C = 20 mA; VCE = 6 V; Zo = 50 Ω. −90° Fig.17 Common emitter output reflection coefficient (S22). 1999 Oct 18 9 1.0 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 1999 Oct 18 REFERENCES IEC JEDEC EIAJ SC-75 10 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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