PHILIPS BFR505T

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR505T
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1999 Feb 11
2000 Mar 14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
FEATURES
DESCRIPTION
• Low current consumption
NPN transistor in a plastic SOT416
(SC-75) package.
• High power gain
3
fpage
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
1
2
Top view
MBK090
Marking code: N0.
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
IC
DC collector current
−
−
18
mA
Ptot
total power dissipation
Ts ≤ 75 °C; note 1
−
−
150
mW
hFE
DC current gain
IC = 5 mA; VCE = 6 V; Tj = 25 °C
60
120
250
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz; −
Tamb = 25 °C
17
−
dB
F
noise figure
IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.2
1.7
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCE
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
18
mA
Ptot
total power dissipation
−
150
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Ts ≤ 75 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 Mar 14
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
THERMAL RESISTANCE
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
Rth j-s
MGU068
200
Ptot
(mW)
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 Mar 14
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector cut-off current
IE = 0; VCB = 6 V
−
−
50
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.4
−
UNIT
nA
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
0.4
−
pF
Cre
feedback capacitance
IC = 0; VCB = 0.5 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain; IC = 5 mA; VCE = 6 V; Tamb = 25 °C;
note 1
f = 900 MHz
−
17
−
dB
−
10
−
dB
f = 2 GHz
S212
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
13
14
−
dB
F
noise figure
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.6
2.1
dB
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
4
−
dBm
ITO
third-order intercept point
note 2
−
10
−
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB
2
2
( 1 – S 11 ) ( 1 – S 22 )
2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at
f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz.
2000 Mar 14
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
MRC019
MRC011
200
handbook,0.5
halfpage
handbook, halfpage
C re
(pF)
h FE
0.4
150
0.3
100
0.2
50
0.1
0
10−3
10−2
10−1
0
10
102
I C (mA)
1
0
2
VCE = 6 V; Tj = 25 °C.
IC = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current.
MRC013
12
T
(GHz)
10
VCE = 8 V
8
3V
handbook,
f halfpage
6
4
2
0
10−1
1
10
I C (mA)
102
f = 1 GHz; Tamb = 25 °C.
Fig.5
Transition frequency as a function of
collector current.
2000 Mar 14
5
4
6
8
10
VCB (V)
Feedback capacitance as a function of
collector-base voltage.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC016
25
gain
(dB)
MRC017
20
handbook, halfpage
handbook, halfpage
gain
(dB)
20
15
G UM
MSG
15
G max
MSG
10
G UM
10
5
5
0
0
2
4
6
0
8
I C (mA)
0
2
4
6
8
I C (mA)
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRC015
handbook, 50
halfpage
MRC014
50
handbook, halfpage
gain
(dB)
gain
(dB)
40
G UM
40
G UM
30
30
MSG
20
20
MSG
G max
10
G max
0
10−2
10−1
1
f (GHz)
10
0
10−2
10
IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C.
1
f (GHz)
10
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
2000 Mar 14
10−1
Fig.9 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
MRC018
4
MRC012
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
3
3
I C = 5 mA
2
2
f = 2 GHz
1.25 mA
900 MHz
1
500 MHz
0
10−1
1
1
I C (mA)
0
10−1
10
1
f (GHz)
10
VCE = 6 V; Tamb = 25 °C.
VCE = 6 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
pot. unst.
region
handbook, full pagewidth
90°
1.0
1
135°
2
0.5
0.8
45°
0.6
stability
0.2
circle
0.4
5
Fmin = 1. 2 dB
180°
0.2
0
0.5
1
0.2
ΓOPT 5
2
0°
F = 1.5 dB
0
F = 2 dB
0.2
−135°
5
F = 3 dB
0.5
2
−45°
1
MRC073
−90°
IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
Fig.12 Noise circle.
2000 Mar 14
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
90°
handbook, full pagewidth
1.0
1
135°
F = 4 dB
F = 3 dB
0.5
0.8
45°
2
0.6
F = 2.5 dB
Fmin = 1.9 dB
0.2
0.4
5
ΓOPT
0.2
180°
0.2
0
0.5
1
5
2
0°
0
5
0.2
0.5
−135°
2
−45°
1
MRC074
1.0
−90°
IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
Fig.13 Noise circle.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
3 GHz
0
5
0.2
−135°
0°
40 MHz
0.5
2
−45°
1
MRC056
−90°
IC = 5 mA; VCE = 6 V;
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
2000 Mar 14
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
15
12
9
6
0°
3
−135°
−45°
−90°
MRC057
IC = 5 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (S21).
90°
handbook, full pagewidth
135°
45°
3 GHz
180°
0.5
40 MHz
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC058
IC = 5 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (S12).
2000 Mar 14
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
40 MHz
3 GHz
0.2
−135°
0.5
0°
0
5
2
−45°
1
MRC059
−90°
IC = 5 mA; VCE = 6 V;
Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (S22).
2000 Mar 14
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2000 Mar 14
REFERENCES
IEC
JEDEC
EIAJ
SC-75
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 14
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
NOTES
2000 Mar 14
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
NOTES
2000 Mar 14
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
NOTES
2000 Mar 14
15
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SCA 69
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Printed in The Netherlands
603508/02/pp16
Date of release: 2000
Mar 14
Document order number:
9397 750 06721