PHILIPS BFS505

DISCRETE SEMICONDUCTORS
DATA SHEET
BFS505
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFS505
PINNING
• Low current consumption
PIN
• High power gain
DESCRIPTION
Code: N0
• Low noise figure
1
base
• High transition frequency
2
emitter
• Gold metallization ensures
excellent reliability
3
collector
handbook, 2 columns
• SOT323 envelope.
3
1
2
Top view
MBC870
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
Fig.1 SOT323.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
IC
DC collector current
−
−
18
mA
Ptot
total power dissipation
up to Ts = 147 °C; note 1
−
−
150
mW
hFE
DC current gain
IC = 5 mA; VCE = 6 V; Tj = 25 °C
60
120
250
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain
Ic = 5 mA; VCE = 6 V; f = 900 MHz; −
Tamb = 25 °C
17
−
dB
F
noise figure
Ic = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.2
1.7
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
18
mA
Ptot
total power dissipation
up to Ts = 147 °C; note 1
−
150
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 147 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
THERMAL RESISTANCE
190 K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector cut-off current
IE = 0; VCB = 6 V
−
−
50
UNIT
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
0.4
−
pF
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.4
−
pF
Cre
feedback capacitance
IC = 0; VCB = 0.5 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz;
(note 1)
Tamb = 25 °C
−
17
−
dB
IC = 5 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
10
−
dB
S212
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
13
14
−
dB
F
noise figure
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.6
2.1
dB
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
Ic = 5 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
4
−
dBm
ITO
third order intercept point
note 2
−
10
−
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2p−q) = 904 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
MRC020 - 1
MRC019
200
200
handbook,
halfpage
handbook, halfpage
P
tot
(mW)
h FE
150
150
100
100
50
50
0
10−3
0
0
50
100
150
200
10−2
10−1
10
102
I C (mA)
1
Ts ( o C)
VCE = 6 V; Tj = 25 °C.
Fig.2 Power derating curve.
Fig.3
MRC011
DC current gain as a function of collector
current.
MRC013
12
handbook,0.5
halfpage
handbook,
f halfpage
C re
(pF)
0.4
T
(GHz)
10
VCE = 8 V
8
3V
0.3
6
0.2
4
0.1
0
2
0
2
4
6
8
0
10−1
10
VCB (V)
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
September 1995
5
1
10
I C (mA)
102
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC016
25
gain
(dB)
MRC017
20
handbook, halfpage
handbook, halfpage
gain
(dB)
20
15
G UM
MSG
15
G max
MSG
10
G UM
10
5
5
0
0
2
4
6
0
8
I C (mA)
0
2
4
6
8
I C (mA)
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRC015
MRC014
50
handbook, 50
halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G UM
40
40
G UM
30
30
MSG
20
20
MSG
G max
10
10
G max
0
10−2
10−1
1
f (GHz)
0
10−2
10
IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C.
1
f (GHz)
10
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
September 1995
10−1
Fig.9 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
MRC018
4
MRC012
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
3
3
I C = 5 mA
2
2
f = 2 GHz
1.25 mA
900 MHz
1
500 MHz
0
10−1
1
1
I C (mA)
0
10−1
10
1
f (GHz)
10
VCE = 6 V; Tamb = 25 °C.
VCE = 6 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
September 1995
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
pot. unst.
region
handbook, full pagewidth
BFS505
90°
1.0
1
135°
0.8
45°
2
0.5
0.6
stability
0.2
circle
0.4
5
Fmin = 1. 2 dB
180°
0.2
0
0.5
1
0.2
ΓOPT 5
2
0°
F = 1.5 dB
0
F = 2 dB
0.2
5
F = 3 dB
0.5
−135°
2
−45°
1
MRC073
1.0
−90°
IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
Fig.12 Noise circle.
90°
handbook, full pagewidth
1.0
1
135°
F = 4 dB
F = 3 dB
0.5
0.8
45°
2
0.6
F = 2.5 dB
Fmin = 1.9 dB
0.2
0.4
5
ΓOPT
0.2
180°
0.2
0
0.5
1
5
2
0
5
0.2
−135°
0°
0.5
2
−45°
1
MRC074
−90°
IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
Fig.13 Noise circle.
September 1995
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
3 GHz
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRC056
−90°
IC = 5 mA; VCE = 6 V;
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
15
12
9
6
0°
3
−135°
−45°
−90°
MRC057
IC = 5 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC058
IC = 5 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
40 MHz
3 GHz
0.2
−135°
0.5
0°
0
5
2
−45°
1
MRC059
−90°
IC = 5 mA; VCE = 6 V;
Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
September 1995
REFERENCES
IEC
JEDEC
EIAJ
SC-70
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
12