DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PIN DESCRIPTION Code: P1p 1 base 2 emitter 3 collector 3 fpage 1 2 Top view MSB003 PNP complement is BFT92. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V IC DC collector current − 25 mA Ptot total power dissipation up to Ts = 95 °C; note 1 − 300 mW fT transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C 5 − GHz Cre feedback capacitance IC = 2 mA; VCE = 10 V; f = 1 MHz 0.4 − pF GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C 18 − dB F noise figure IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt. 2.4 − dB Vo output voltage dim = −60 dB; IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 493.25 MHz 150 − mV MIN. MAX. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 25 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C up to Ts = 95 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 95 °C; note 1 260 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. − − 50 UNIT ICBO collector cut-off current hFE DC current gain IC = 14 mA; VCE = 10 V 40 90 − fT transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz − 5 − GHz Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.75 − pF IE = 0; VCB = 10 V nA Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 0.8 − pF Cre feedback capacitance IC = 2 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C − 0.4 − pF GUM maximum unilateral power gain (note 1) IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 18 − dB F noise figure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt. − 2.4 − dB Vo output voltage − 150 − mV note 3 Notes 2 S 21 - dB˙ 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. Crystal mounted in a SOT37 envelope (BFR90). 3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 495.25 MHz; Vq = Vo −6 dB; fq = 503.25 MHz; Vr = Vo −6 dB; fr = 505.25 MHz; measured at f(p+q−r) = 493.25 MHz. September 1995 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 MEA425 - 1 400 handbook, halfpage P tot (mW) 24 V handbook, halfpage L3 390 Ω 820 Ω 300 3.9 kΩ 300 Ω L2 680 pF 650 pF L1 75 Ω input 200 75 Ω output 680 pF DUT 100 16 Ω MEA446 0 0 50 100 150 200 Ts ( o C) L2 = L3 = 5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. Fig.2 Intermodulation distortion test circuit. Fig.3 Power derating curve. MEA428 MCD074 120 1 handbook, halfpage handbook, halfpage Cc (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 10 20 I C (mA) 0 30 10 VCE = 10 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.4 Fig.5 DC current gain as a function of collector current. September 1995 4 V CB (V) 20 Collector capacitance as a function of collector-base voltage. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 MEA444 MEA427 6 30 handbook, halfpage handbook, halfpage fT (GHz) gain (dB) 4 20 G UM 2 10 I S12 I 2 0 0 10 20 I C (mA) 0 2 10 30 VCE = 10 V; f = 500 MHz; Tj = 25 °C. Fig.6 10 3 104 f (MHz) IC = 14 mA; VCE = 10 V; Tamb = 25 °C. Transition frequency as a function of collector current. Fig.7 Gain as a function of frequency. MEA465 6 MEA424 5 handbook, halfpage handbook, halfpage F (dB) F (dB) 5 4 4 3 3 2 2 1 1 0 10 –1 1 f (GHz) 0 0 10 5 10 15 20 I C (mA) IC = 2 mA; VCE = 10 V; Tamb = 25 °C; Zs = opt. VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt. Fig.8 Fig.9 Minimum noise figure as a function of frequency. September 1995 5 Minimum noise figure as a function of collector current. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 MEA426 handbook, halfpage 40 BS (mS) 20 F = 5 dB 4.5 0 3 3.5 4 2.4 20 40 0 20 40 60 80 100 G S (mS) IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C. Fig.10 Noise circle figure. September 1995 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 10 ∞ 1000 MHz 800 500 –j 10 200 0.2 5 2 0.5 MEA429 1 IC = 14 mA; VCE = 10 V; Tamb = 25 °C. Zo = 50 Ω. Fig.11 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 200 150° 30° 500 800 +ϕ 1000 MHz 180° 20 12 0° 4 −ϕ 30° 150° 60° 120° 90° MEA431 IC = 14 mA; VCE = 10 V; Tamb = 25 °C. Fig.12 Common emitter forward transmission coefficient (S21). September 1995 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 90° handbook, full pagewidth 120° 60° 1000 MHz 800 150° 30° 500 200 180° +ϕ 0.05 0° 0.15 0.10 −ϕ 30° 150° 60° 120° MEA432 90° IC = 14 mA; VCE = 10 V; Tamb = 25 °C. Fig.13 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 ∞ –j 800 500 1000 MHz 0.2 10 200 5 2 0.5 1 MEA430 IC = 14 mA; VCE = 10 V; Tamb = 25 °C. Zo = 50 Ω. Fig.14 Common emitter output reflection coefficient (S22). September 1995 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 September 1995 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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