TOREX XP161A11A1PR

XP161A11A1PR
Power MOS FET
◆ N-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance: 0.105Ω MAX
◆ Gate Protect Diode Built-in
◆ Ultra High-Speed Switching
◆ SOT-89 Package
■ Applications
■ General Description
■ Features
The XP161A11A1PR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V)
Rds(on)=0.105Ω(Vgs=4.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage: 4.5V
High density mounting: SOT-89
■ Pin Configuration
■ Pin Assignment
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems
u
1
2
3
G
D
S
PIN
NUMBER
PIN
NAME
FUNCTION
1
G
Gate
2
D
Drain
3
S
Source
SOT-89
(TOP VIEW)
■ Absolute Maximum Ratings
■ Equivalent Circuit
1
2
N-Channel MOS FET
(1 device built-in)
3
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Vdss
30
V
Gate-Source Voltage
Vgss
±20
V
Drain Current (DC)
Id
4
A
Drain Current (Pulse)
Idp
16
A
Reverse Drain Current
Idr
4
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
:
Storage Temperature
Tstg
-55~150
:
Note: When implemented on a ceramic PCB
490
Ta=25:
■ Electrical Characteristics
DC characteristics
Ta=25:
PARAMETER
Drain Cut-off Current
SYMBOL
Idss
CONDITIONS
Vds=30V, Vgs=0V
Gate-Source Leakage Current
Igss
Gate-Source Cut-off Voltage
Vgs(off)
Vgs=±20V, Vds=0V
Id=1mA, Vds=10V
MIN
TYP
1.0
MAX
10
UNITS
µA
±10
µA
V
Ω
2.5
0.065
0.105
Rds(on)
Id=2A, Vgs=10V
Id=2A, Vgs=4.5V
0.05
0.075
Forward Transfer Admittance
(note)
Yfs
Id=2A, Vds=10V
5.5
Body Drain Diode
Forward Voltage
Vf
If=4A, Vgs=0V
0.85
1.1
V
SYMBOL
CONDITIONS
TYP
MAX
UNITS
Drain-Source On-state
Resistance (note)
Ω
S
Note: Effective during pulse test.
Dynamic characteristics
PARAMETER
Ta=25:
Input Capacitance
Ciss
Output Capacitance
Coss
Feedback Capacitance
Crss
MIN
Vds=10V, Vgs=0V
f=1MHz
270
pF
150
pF
pF
55
u
Switching characteristics
Ta=25:
PARAMETER
SYMBOL
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
Fall Time
td (off)
tf
CONDITIONS
MIN
Vgs=5V, Id=2A
Vdd=10V
TYP
MAX
UNITS
10
ns
15
ns
35
15
ns
ns
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
SYMBOL
CONDITIONS
Rth (ch-a)
Implement on a glass epoxy
resin PCB
MIN
TYP
62.5
MAX
UNITS
:/W
491
XP161A11A1PR
Power MOS FET
■ Electrical Characteristics
Drain Current vs. Drain /Source Voltage
Drain Current vs. Gate/Source Voltage
Pulse Test, Ta=25:
16
10V
5V
4.5V
14
14
4V
12
Drain Current:Id (A)
Drain Current:Id (A)
Vds=10V, Pulse Test
16
10
3.5V
8
6
4
3V
2
Vgs＝2.5V
25℃
12
Ta＝-55℃
8
6
4
2
0
0
0
1
2
3
4
5
0
Drain/Source Voltage:Vds (V)
0.15
Id＝4A
0.1
2A
0.05
0
5
6
Pulse Test, Ta=25:
0.1
Vgs＝4.5V
10V
2
4
6
8
10
0
5
Gate/Source Voltage:Vgs (V)
Id＝4A
Vgs＝4.5V
2A
2A , 4A
0.05
10V
0
-50
20
Vds=10V, Id=1mA
0.6
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
0.15
0.1
15
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Pulse Test
0.2
10
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
Drain/Source On-State Resistance
:Rds (on) (Ω)
4
0.01
0
0.4
0.2
0
-0.2
-0.4
-0.6
0
50
100
Ambient Temperature:Topr (:)
492
3
1
Drain/Source On-State Resistance
:Rds (on) (Ω)
Drain /Source On-State Resistance
:Rds (on) (Ω)
2
Drain/Source On-State Resistance vs. Drain Current
Pulse Test, Ta=25:
0.2
1
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
u
125℃
10
150
-50
0
50
100
Ambient Temperature:Topr (:)
150
■ Electrical Characteristics
Capacitance vs. Drain/Source Voltage
Switching Time vs. Drain Current
Vgs＝0V , f＝1MHz , Ta＝25℃
Vgs＝5V , Vdd≒10V , PW＝10μs , duty≦1% , Ta＝25℃
1000
Switching Time:t (ns)
Capacitance:C (pF)
1000
Ciss
Coss
100
Crss
100
tf
td（off）
tr
10
td（on）
0
10
0
5
10
15
20
25
30
0
2
Drain/Source Voltage:Vds (V)
Gate/Source Voltage vs. Gate Charge
8
10
Ta=25℃, Pulse Test
16
Reverse Drain Current:Idr (A)
Gate/Source Voltage:Vgs (V)
6
Reverse Drain Current vs. Source/Drain Voltage
Vds=10V, Id=4A, Ta=25℃
10
4
Drain Current:Id (A)
8
6
4
2
0
14
12
u
10
4.5V
8
6
4
Vgs=0V, -4.5V
2
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Source/Drain Voltage:Vsd (V)
Gate Charge:Qg (nc)
Standardized Transition Thermal Resistance:γs(t)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth(ch-a)=62.5℃/W, (Implemented on a ceramic PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
493