TOREX XP133A0245SR

Power MOS FET
◆N-Channel Power MOS FET
■Applications
◆DMOS Structure
●Notebook PCs
◆Low On-State Resistance: 0.045Ω (max)
●Cellular and portable phones
●On-board power supplies
◆Ultra High-Speed Switching
●Li-ion battery systems
◆SOP-8 Package
◆Two FET Devices Built-in
■General Description
■Features
The XP133A0245SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.045Ω (Vgs=4.5V)
■Pin Configuration
: Rds(on)=0.060Ω (Vgs=2.5V)
: Rds(on)=0.1Ω (Vgs=1.5V)
Ultra high-speed switching
Operational Voltage
: 1.5V
High density mounting : SOP-8
■Pin Assignment
S1 1
8 D1
PIN
NUMBER
PIN
NAME
FUNCTION
G1 2
7 D1
1
S1
Source
S2 3
6 D2
2
G1
Gate
3
S2
Source
4
G2
Gate
5~6
D2
Drain
7~8
D1
Drain
G2 4
5 D2
SOP-8
(TOP VIEW)
■Equivalent Circuit
11
■Absolute Maximum Ratings
Ta=25°C
1
8
PARAMETER
SYMBOL
RATINGS
UNITS
2
7
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss
±8
V
3
6
4
5
N-Channel MOS FET
(2 devices built-in)
Drain Current (DC)
Id
5
A
Drain Current (Pulse)
Idp
15
A
Reverse Drain Current
Idr
5
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55~150
°C
Note: When implemented on a glass epoxy PCB
775
XP133A0245SR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Ta=25°C
MIN
TYP
MAX
10
UNITS
µA
±1
1.2
µA
V
Ω
SYMBOL
Idss
CONDITIONS
Vds=20V, Vgs=0V
Gate-Source Leakage Current
Igss
Gate-Source Cut-off Voltage
Vgs(off)
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=3A, Vgs=4.5V
Id=3A, Vgs=2.5V
Id=1A, Vgs=1.5V
0.035
0.047
0.078
Forward Transfer Admittance
(note)
Yfs
Id=3A, Vds=10V
12
Body Drain Diode
Forward Voltage
Vf
If=5A, Vgs=0V
0.85
1.1
V
SYMBOL
CONDITIONS
TYP
MAX
UNITS
0.5
0.045
0.06
0.1
Ω
Ω
S
Note: Effective during pulse test.
Dynamic Characteristics
PARAMETER
Ta=25°C
Input Capacitance
Ciss
Output Capacitance
Coss
Feedback Capacitance
Crss
MIN
Vds=10V, Vgs=0V
f=1MHz
880
pF
460
pF
pF
150
Switching Characteristics
11
SYMBOL
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
Fall Time
td (off)
tf
CONDITIONS
MIN
Vgs=5V, Id=3A
Vdd=10V
TYP
MAX
UNITS
10
ns
15
ns
65
10
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(channel-ambience)
776
Ta=25°C
PARAMETER
SYMBOL
CONDITIONS
Rth (ch-a)
Implement on a glass epoxy
resin PCB
MIN
TYP
62.5
MAX
UNITS
˚C/W
XP133A0245SR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Pulse Test, Ta=25°C
15
Pulse Test, Vds=10V
15
2.5V
5V
2V
3V
Drain Current:Id (A)
Drain Current:Id (A)
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
10
4V
1.5V
5
10
Topr＝25℃
5
125℃
Vgs＝1V
-55℃
0
0
0
1
2
3
0
1
Drain-Source Voltage:Vds (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
Drain-Source On-State Resistance
:Rds (on) (Ω)
Drain-Source On-State Resistance
:Rds (on) (Ω)
0.1
5A
Id＝3A
0.05
Pulse Test, Ta=25°C
1
Vgs＝1.5V
0.1
2.5V
4.5V
0.01
0
0
2
4
6
8
0
10
5
Pulse Test
0.1
Vgs＝1.5V
1A
5A
3A
0.05
3A,5A
4.5V
0
-60
Vds=10V, Id=1mA
0.6
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
Id＝3A
2.5V
15
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
0.15
10
Drain Current:Id (A)
Gate-Source Voltage:Vgs (V)
Drain-Source On-State Resistance
:Rds (on) (Ω)
3
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25°C
0.15
2
Gate-Source Voltage:Vgs (V)
11
0.4
0.2
0.0
-0.2
-0.4
-0.6
-30
0
30
60
90
Ambient Temp.:Topr (°C)
120
150
-60
-30
0
30
60
90
120
150
Ambient Temp.:Topr (°C)
777
XP133A0245SR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
SWITCHING TIME vs. DRAIN CURRENT
Vgs=0V, f=1MHz
10000
Vgs=5V, Vdd≒10V, PW=10µsec. duty≤1%
1000
Switching Time:t (ns)
Capacitance:C (pF)
tf
Ciss
1000
Coss
Crss
100
10
td（off）
tr
10
td（on）
1
0
5
10
15
0.1
20
1
10
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Vds=10V, Id=5A
Pulse Test
15
Reverse Drain Current:Id (A)
5
Gate-Source Voltage:Vgs (V)
100
4
3
2
1
0
2.5V
10
Vgs＝4.5V
1.5V
5
0,-4.5V
0
0
5
10
15
20
25
0
0.2
0.4
0.6
0.8
Source-Drain Voltage:Vsd (V)
Gate Charge:Qg (nc)
11
Standardized Transition Thermal Resistance:γs(t)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5˚C/W, (Implemented on a glass epoxy PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
Pulse Width:PW (sec)
778
1
10
100
1