XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max (Nch) 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in ■ ● ● ● ■ General Description ■ Features Applications Notebook PCs Cellular and portable phones On - board power supplies Low on-state resistance (Nch) : Rds (on) = 0.033Ω ( Vgs = 10V ) The XP135A1145SR is a N-Channel/P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Rds (on) = 0.045Ω ( Vgs = 4.5V ) Low on-state resistance (Pch) : Rds (on) = 0.065Ω ( Vgs = -10V ) Two FET devices are built-into the one package. Rds (on) = 0.110Ω ( Vgs = -4.5V ) Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. Ultra high-speed switching The small SOP-8 package makes high density mounting possible. Operational Voltage : 4.5V (Nch) : -4.5V (Pch) High density mounting : SOP - 8 ■ Pin Configuration ■ Pin Assignment S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SOP - 8 Top View ■ Equivalent Circuit PIN NUMBER u FUNCTION PIN NAME 1 S1 2 G1 Source (Nch) Gate (Nch) 3 S2 Source (Pch) 4 G2 Gate (Pch) 5 - 6 D2 Drain (Pch) 7 - 8 D1 Drain (Nch) ■ Absolute Maximum Ratings Ta=25 OC １ ８ PARAMETER SYMBOL ２ ７ ３ ６ ４ ５ Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Vdss Vgss Id Idp Idr Pd N-Channel/P - Channel MOS FET ( 2 devices built-in ) Power Dissipation (note) RATINGS Nch Pch 30 ±20 6 20 6 - 30 ±20 -4 - 16 -4 2 UNITS V V A A A W Channel Temperature Tch 150 O C Storage Temperature Tstg - 55 to 150 O C ( note ) : When implemented on a glass epoxy PCB 437 XP135A1145SR Power MOS FET ■ Electrical Characteristics DC characteristics (P-Channel Power MOS FET) Ta=25 C UNITS O PARAMETER SYMBOL CONDITIONS Drain Cut-off Current Gate-Source Leakage Current Idss Igss Vds = - 30 , Vgs = 0V Vgs = ± 20 , Vds = 0V Gate-Source Cut-off Voltage Vgs (off ) Drain-Source On-state Resistance ( note ) Rds ( on ) Forward Transfer Admittance ( note ) | Yfs | Id = - 2A , Vds = - 10V Vf If = - 4A , Vgs = 0V Body Drain Diode Forward Voltage Id = -1mA , Vds = -10V MIN TYP -1 Id = - 2A , Vgs = -10V 0.055 0.09 Id = - 2A , Vgs = - 4.5V MAX - 10 µA ±1 µA - 2.5 V 0.065 0.11 Ω Ω 5 - 0.85 S - 1.1 V MAX Ta=25 C UNITS ( note ) : Effective during pulse test. Dynamic characteristics O u PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Crss Feedback Capacitance CONDITIONS MIN TYP 680 pF Vds = - 10V , Vgs = 0V 450 f = 1 MHz 170 pF pF TYP Ta=25 C UNITS Switching characteristics O PARAMETER SYMBOL Turn-on Delay Time td ( on ) Rise Time Turn-off Delay Time tr td ( off ) Fall Time tf CONDITIONS MIN Vgs = - 5V , Id = - 2A Vdd = - 10V MAX 15 ns 20 ns 30 ns ns 20 Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) 438 SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS O C/W ■ Electrical Characteristics DC characteristics (N-Channel Power MOS FET) Ta=25 C UNITS O PARAMETER SYMBOL CONDITIONS Drain Cut-off Current Gate-Source Leakage Current Idss Igss Vds = 30 , Vgs = 0V Vgs = ± 20 , Vds = 0V Gate-Source Cut-off Voltage Vgs (off ) Drain-Source On-state Resistance ( note ) Rds ( on ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage Id = 1mA , Vds = 10V MIN TYP 1.0 Id = 3A , Vgs = 10V Id = 3A , Vgs = 4.5V 0.026 0.035 | Yfs | Id = 3A , Vds = 10V 12 Vf If = 6A , Vgs = 0V 0.85 MAX 10 µA ±1 µA 2.5 V 0.033 0.045 Ω Ω S 1.1 V MAX Ta=25 C UNITS ( note ) : Effective during pulse test. Dynamic characteristics O PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Crss Feedback Capacitance CONDITIONS MIN Vds = 10V , Vgs = 0V f = 1 MHz TYP 620 pF 350 120 pF pF TYP Ta=25 C UNITS u Switching characteristics O PARAMETER SYMBOL Turn-on Delay Time td ( on ) Rise Time Turn-off Delay Time tr td ( off ) Fall Time tf CONDITIONS MIN Vgs = 5V , Id = 3A Vdd = 10V MAX 15 ns 20 ns 30 ns ns 10 Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy MIN TYP 62.5 MAX UNITS O C/W resin PCB 439 XP135A1145SR Power MOS FET ■ Electrical Characteristics (N-channel Power MOS FET) Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Ta=25℃, Pulse Test 30 10V 4.5V 25℃ 4V 5V 25 Vds=10V, Pulse Test 30 25 20 Drain Current:Id (A) Drain Current:Id (A) Ta=-55℃ 3.5V 15 3V 10 5 15 10 5 Vgs=2.5V 0 0 0 1 2 3 4 5 0 Drain/Source Voltage:Vds (V) 0.08 0.06 Id=7A 4A 0.04 0.02 0 5 Ta=25℃, Pulse Test Vgs=4.5V 10V 2 4 6 8 0 10 5 Gate/Source Voltage:Vgs (V) 0.06 Id=7A 4A 0.04 4A, 7A 0.02 10V 0 -50 0 50 100 Ambient Temp. :Topr (℃) 20 150 Vds=10V, Id=1mA 0.8 Gate/Source Cut Off Voltage Variance :Vgs(off) Variance (V) 0.08 Vgs=4.5V 15 Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Pulse Test 0.1 10 Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp Drain/Source On-State Resistance :Rds(on) (Ω) 4 0.01 0 440 3 0.1 Drain/Source On-State Resistance :Rds(on) (Ω) Drain/Source On-State Resistance :Rds(on) (Ω) 2 Drain/Source On-State Resistance vs. Drain Current Ta=25℃, Pulse Test 0.1 1 Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage u 125℃ 20 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -50 0 50 100 Ambient Temp. :Topr (℃) 150 ■ Electrical Characteristics (N-channel Power MOS FET) Capacitance vs. Drain/Source Voltage Vgs=0V, f=1MHz, Ta=25℃ 1000 Vgs=5V, Vdd=10V, PW=10μs, duty≦1%, Ta=25℃ 1000 Switching Time:t (ns) 10000 Capacitance:C (pF) Switching Time vs. Drain Current Ciss Coss Crss 100 10 tf 100 td(off) tr td(on) 10 1 0 5 10 15 20 25 30 0 2 Drain/Source Voltage:Vds (V) 8 10 Reverse Drain Current vs. Source/Drain Voltage Vds＝10V , Id＝7A , Ta＝25℃ -8 -6 -4 -2 Ta＝25℃ , Pulse Test -16 Reverse Drain Current:Idr (A) Gate/Source Voltage:Vgs (V) 6 Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge -10 4 0 -12 u -4.5V -8 Vgs＝0V,4.5V -4 0 0 5 10 15 20 25 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 Source/Drain Voltage:Vsd (V) Gate Charge:Qg (nc) Standardized Transition Thermal Resistance:γs(t) Standardized Transition Thermal Resistance vs. Pulse Width Rth(ch-a)=62.5℃/W, (Implemented on a ceramic PCB) 10 1 Single Pulse 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width:PW (s) 441