ONSEMI NTR2101PT1G

NTR2101P
Small Signal MOSFET
−8.0 V, −3.7 A, Single P−Channel, SOT−23
Features
•
•
•
•
Leading Trench Technology for Low RDS(on)
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
Pb−Free Package is Available
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V(BR)DSS
RDS(on) Typ
ID Max
39 mW @ −4.5 V
−8.0 V
Applications
−3.7 A
52 mW @ −2.5 V
• High Side Load Switch
• DC−DC Conversion
• Cell Phone, Notebook, PDAs, etc.
79 mW @ −1.8 V
P−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−8.0
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−3.7
A
Continuous Drain
Current (Note 1)
t ≤ 10 s
Power Dissipation
(Note 1)
Pulsed Drain Current
TA = 25°C
TA = 70°C
t ≤ 10 s
G
S
−3.0
PD
0.96
W
3
tp = 10 ms
Operating Junction and Storage Temperature
IDM
−11
Drain
3
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−1.2
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Symbol
Max
Unit
Junction−to−Ambient – Steady State
RqJA
160
°C/W
Junction−to−Ambient − t ≤ 10 s
RqJA
130
THERMAL RESISTANCE RATINGS
Parameter
MARKING DIAGRAM &
PIN ASSIGNMENT
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
2
SOT−23
CASE 318
STYLE 21
TR7 M G
G
1
Gate
2
Source
TR7
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTR2101PT1
NTR2101PT1G
Package
Shipping†
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
1
Publication Order Number:
NTR2101P/D
NTR2101P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−8.0
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
10
VGS = 0 V,
VDS = −6.4 V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−100
IGSS
VDS = 0 V, VGS = ±8.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
−0.40
−1.0
0.0027
VGS = −4.5 V, ID = −3.5 A
39
V
mV/°C
52
mW
VGS = −2.5 V, ID = −3.0 A
52
72
VGS = −1.8 V, ID = −2.0 A
79
120
VGS = −5.0 V, ID = −3.5 A
9.0
S
1173
pF
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −4.0 V
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
289
218
15
nC
7.4
15
ns
15.75
25
38
58
31
51
−0.73
−1.2
12
VGS = −4.5 V, VDS = −4.0 V,
ID = −3.5 A
3.8
2.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = −4.5 V, VDD = −4.0 V,
ID = −1.2 A, RG = 6.0 W
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −1.2 A
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
TJ = 25°C
V
NTR2101P
10
VGS = −2.6 V to −6.0 V
−ID, DRAIN CURRENT (A)
VGS = −2.4 V
8
−ID, DRAIN CURRENT (A)
10
TJ = 25°C
VGS = −2.0 V
VGS = −2.2 V
6
VGS = −1.8 V
4
2
VGS = −1.4 V
VDS ≥ −10 V
8
TJ = 150°C
6
TJ = 25°C
4
TJ = −55°C
2
VGS = −1.2 V
0
0
1
2
3
4
0
5
0.15
0.1
0.05
0
1
2
3
4
5
6
0.08
VGS = −4.5 V
0.06
TJ = 150°C
TJ = 25°C
0.04
TJ = −55°C
0.02
0
2
3
4
5
6
7
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.7
8
100000
ID = −3.7 A
VGS = −4.5 V
VGS = 0 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
Figure 2. Transfer Characteristics
0.2
1.5
3
Figure 1. On−Region Characteristics
ID = −3.7 A
TJ = 25°C
1.6
2
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.25
0
1
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.4
TJ = 150°C
10000
1.3
1.2
1.1
1.0
1000
TJ = 100°C
0.9
0.8
−50
100
−25
0
25
50
75
100
125
150
0
2
4
6
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
8
VDS = 0
VGS = 0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
2500
TJ = 25°C
C, CAPACITANCE (pF)
2000
1500
CISS
CRSS
1000
500
COSS
0
−4
−2
0
−VGS −VDS
2
4
6
8
5
4
VGS
3
QGS
2
QDS
2
TJ = 25°C
ID = −3.5 A
1
0
0
2
4
6
8
10
12
1
0
14
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
1000
6
100
−IS, SOURCE CURRENT (A)
VDD = −4.0 V
ID = −1.0 A
VGS = −4.5 V
t, TIME (ns)
4
VDS
3
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
tf
td(off)
tr
10
td(on)
1
5
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
NTR2101P
1
10
4
3
2
1
0
100
VGS = 0 V
TJ = 25°C
5
0.3
0.45
0.6
0.75
0.9
1.05
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
1.2
NTR2101P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
1
c
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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NTR2101P/D