MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guardring for Stress Protection Pb−Free Package is Available Mechanical Characteristics • Case: Epoxy, Molded • Weight: 70 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or Polarity Band http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS MARKING DIAGRAM B14 AYWW G SMA CASE 403D PLASTIC A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MBRA140T3 SMA 5000 / Tape & Reel SMA (Pb−Free) 5000 / Tape & Reel MBRA140T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 8 1 Publication Order Number: MBRA140T3/D MBRA140T3 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 30 A Storage Temperature Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C dv/dt 10,000 V/ms > 400 > 8000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 95°C) Voltage Rate of Change (Rated VR, TJ = 25°C) ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJL RqJA 35 86 °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) see Figure 2 for other Values Maximum Instantaneous Reverse Current see Figure 4 for other Values VF (IF = 1.0 A) (IF = 2.0 A) IR (VR = 40 V) (VR = 20 V) 1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.55 0.71 0.505 0.74 TJ = 25°C TJ = 100°C 0.5 0.1 10 4.0 V mA I F, INSTANTANEOUS FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) MBRA140T3 10 TJ = 85°C 1.0 TJ = 125°C TJ = 25°C TJ = -40°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.0 TJ = 85°C TJ = 25°C TJ = 125°C 0.1 0 0.2 0.6 0.4 0.8 1.0 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E-3 1.2 100E-3 10E-3 TJ = 125°C 1.0E-3 TJ = 85°C I R , MAXIMUM REVERSE CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) 10 100E-6 10E-3 TJ = 85°C 1.0E-3 TJ = 25°C 100E-6 TJ = 25°C 10E-6 1.0E-6 0 10 20 30 40 10E-6 1.0E-6 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 40 MBRA140T3 1.2 SQUARE WAVE 1.0 Ipk/Io = p Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) FREQ = 20 kHz 1.4 0.8 PFO , AVERAGE POWER DISSIPATION (WATTS) dc 20 40 60 80 100 120 1.0 0.9 SQUARE WAVE 0.8 dc Ipk/Io = p 0.7 Ipk/Io = 5 0.6 Ipk/Io = 10 0.5 0.4 Ipk/Io = 20 0.3 0.2 0.1 0 140 0 0.2 0.6 0.4 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1.6 T, TIME (s) 1.0E+0 100E-3 10E-3 1.0E-3 100E-6 10E-6 1.0E-3 100E-6 10E-3 1.0E+0 100E-3 10E+0 T, TIME (s) Figure 7. Thermal Response 1000 C, CAPACITANCE (pF) IO , AVERAGE FORWARD CURRENT (AMPS) 1.6 100 TJ = 25°C 10 1.0 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance http://onsemi.com 4 35 40 100E+0 1.0E+3 MBRA140T3 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE D HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.92 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.17 2.27 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MIN 0.076 0.002 0.050 0.006 0.090 0.160 0.190 0.030 MAX 0.089 0.006 0.064 0.016 0.115 0.180 0.220 0.060 SOLDERING FOOTPRINT* A L c 4.0 0.157 A1 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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