MBRS230LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 30 VOLTS Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop Pb−Free Package is Available SMB CASE 403A PLASTIC Mechanical Characteristics • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94, V−0 @ 0.125 in. Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Maximum Temperature of 260°C/10 Seconds for Soldering Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix to Part Number Cathode Polarity Band MARKING DIAGRAM ALYW 2BL3 A = Assembly Location L = Wafer Lot Y = Year W = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRS230LT3 MBRS230LT3G Package Shipping† SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 April, 2005 − Rev. 3 1 Publication Order Number: MBRS230LT3/D MBRS230LT3 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR, TC = 110°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 105°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 40 A Tstg, TC −55 to +175 °C TJ −55 to +125 °C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value RJL 18.6 RJA 135 Unit °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) VF (IF = 2.0 A) (IF = 4.0 A) see Figure 2 Maximum Instantaneous Reverse Current (Note 2) IR (VR = 30 V) (VR = 15 V) see Figure 4 TJ = 25°C TJ = 125°C 0.50 0.60 0.45 0.63 TJ = 25°C TJ = 125°C 1 0.31 75 35 V mA A IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. Minimum pad size (0.108″ X 0.085″) for each lead on FR4 board. 2. Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤ 2.0%. 10 1 TJ = 125°C 0.1 100°C 25°C −55°C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125°C 1 100°C 25°C 0.1 0 Figure 1. Typical Forward Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.8 100E−3 TJ = 125°C 10E−3 TJ = 100°C 1E−3 100E−6 1E−6 0 10 5 15 20 25 30 FREQ = 20 kHz Ipk/Io = 1.5 Ipk/Io = 5.0 1.0 Ipk/Io = 10 Ipk/Io = 20 0 20 0 60 40 100 80 120 140 TC, CASE TEMPERATURE (°C) 20 15 25 30 1.8 dc 1.6 1.4 Ipk/Io = 1.2 SQUARE WAVE Ipk/Io = 5.0 Ipk/Io = 10 1.0 Ipk/Io = 20 0.8 0.6 0.4 0.2 TJ = 125°C 0 0 Figure 5. Current Derating Per Leg r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 10 5 Figure 4. Maximum Reverse Current SQUARE WAVE 0 10E−6 Figure 3. Typical Reverse Current 3.0 0.5 TJ = 25°C VR, REVERSE VOLTAGE (VOLTS) dc 2.0 1E−3 VR, REVERSE VOLTAGE (VOLTS) 3.5 2.5 TJ = 100°C 100E−6 TJ = 25°C 10E−6 TJ = 125°C 10E−3 PFO, AVERAGE POWER DISSIPATION (WATTS) IR, REVERSE CURRENT (AMPS) 100E−3 IO, AVERAGE FORWARD CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS) MBRS230LT3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation Per Leg 1 RJ Lead = 18.6 0.1 RJ Ambient = 150 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 7. Thermal Response http://onsemi.com 3 10 100 1000 MBRS230LT3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A−03 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. S A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 C K P H J SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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