MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 60 VOLTS Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guard−ring for Stress Protection Pb−Free Package is Available SMA CASE 403D PLASTIC Mechanical Characteristics: MARKING DIAGRAM • Case: Epoxy, Molded • Weight: 70 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: Machine Model = C Human Body Model = 3B B16 AYWW G B16 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MBRA160T3 MBRA160T3G Package Shipping† SMA 5000/Tape & Reel SMA (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 January, 2010 − Rev. 9 1 Publication Order Number: MBRA160T3/D MBRA160T3 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V Average Rectified Forward Current (At Rated VR, TC = 105°C) IO 1.0 A Average Rectified Forward Current (At Rated VR, TC = 70°C) IO 2.1 A IFSM 60 A Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJL RqJA 35 86 °C/W Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A) IR Maximum Instantaneous Reverse Current (VR = 60 V) 2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 TJ = 25°C TJ = 125°C 0.510 0.475 TJ = 25°C TJ = 125°C 0.2 20 V mA MBRA160T3 1 75°C 125°C 0.1 0.1 25°C 0.2 0.3 0.4 0.5 0.7 0.6 1 75°C 125°C 0.1 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E−02 80 125°C 70 1E−03 75°C 1E−04 1E−05 0 10 50 40 30 25°C 1E−06 25°C 60 20 30 40 50 20 60 0 10 VR, REVERSE VOLTAGE (VOLTS) 1.6 1.4 SQUARE WAVE 1.2 1.0 0.8 0.6 0.4 0.2 0 110 115 120 125 130 135 140 145 150 155 PFO, AVERAGE POWER DISSIPATION (W) TJ = 150°C dc 30 50 40 60 70 Figure 4. Typical Capacitance 2.0 1.8 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) C, CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (A) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 1.0 SQUARE WAVE TJ = 150°C 0.8 dc 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating − Junction−to−Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBRA160T3 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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