ONSEMI NE592

NE592
Video Amplifier
The NE592 is a monolithic, two-stage, differential output,
wideband video amplifier. It offers fixed gains of 100 and 400
without external components and adjustable gains from 400 to 0 with
one external resistor. The input stage has been designed so that with
the addition of a few external reactive elements between the gain
select terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
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MARKING
DIAGRAMS
8
1
Features
•
•
•
•
•
•
•
SOIC−8
D SUFFIX
CASE 751
NE592
ALYW
G
1
120 MHz Unity Gain Bandwidth
Adjustable Gains from 0 to 400
Adjustable Pass Band
No Frequency Compensation Required
Wave Shaping with Minimal External Components
MIL-STD Processing Available
Pb−Free Packages are Available
8
1
NE592N8
AWL
YYWWG
PDIP−8
N SUFFIX
CASE 626
1
Applications
•
•
•
•
•
14
Floppy Disk Head Amplifier
Video Amplifier
Pulse Amplifier in Communications
Magnetic Memory
Video Recorder Systems
1
SOIC−14
D SUFFIX
CASE 751A
1
+V
R1
R2
R8
R10
1
R9
Q6
14
PDIP−14
N SUFFIX
CASE 646
Q3
OUTPUT 1
R11
INPUT 1
INPUT 2
Q1
Q2
G1A
R12
G1B
R3
OUTPUT 2
A
L, WL
Y, YY
W, WW
G or G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
R5
G2A
G2B
Q7A
NE592N14
AWLYYWWG
1
Q5
Q4
NE592D14G
AWLYWW
Q7B
R7A
ORDERING INFORMATION
Q8
R7B
Q9
R15
R16
Q10
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Q11
R13
R14
-V
Figure 1. Block Diagram
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 4
1
Publication Order Number:
NE592/D
NE592
PIN CONNECTIONS
D, N Packages
INPUT 2
1
D, N Packages
14
INPUT 2
1
8
INPUT 1
G1B GAIN SELECT
INPUT 1
NC
2
13
NC
G2B GAIN SELECT
3
12
G2A GAIN SELECT
G1B GAIN SELECT
4
11
G1A GAIN SELECT
V-
5
10
V+
NC
6
9
NC
OUTPUT 2
7
8
OUTPUT 1
2
7
G1A GAIN SELECT
V- 3
6
V+
4
5
OUTPUT 1
OUTPUT 2
(Top View)
(Top View)
MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)
Symbol
Value
Unit
Supply Voltage
VCC
"8.0
V
Differential Input Voltage
VIN
"5.0
V
Common-Mode Input Voltage
VCM
"6.0
V
Output Current
Rating
IOUT
10
mA
Operating Ambient Temperature Range
TA
0 to +70
°C
Operating Junction Temperature
TJ
150
°C
TSTG
65 to +150
°C
Storage Temperature Range
Maximum Power Dissipation, TA = 25°C (Still Air) (Note 1)
D-14 Package
D-8 Package
N-14 Package
N-8 Package
Thermal Resistance, Junction−to−Ambient
D-14 Package
D-8 Package
N-14 Package
N-8 Package
PD MAX
W
0.98
0.79
1.44J1.17
RqJA
145
182
100
130
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Derate above 25°C at the following rates:
D-14 package at 6.9 mW/°C
D-8 package at 5.5 mW/°C
N-14 package at 10 mW/°C
N-8 package at 7.7 mW/°C.
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2
NE592
DC ELECTRICAL CHARACTERISTICS (VSS = "6.0 V, VCM = 0, typicals at TA = +25°C, min and max at 0°C v TA v 70°C, unless
otherwise noted. Recommended operating supply voltages VS = "6.0 V.)
Characteristic
Differential Voltage Gain
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Input Resistance
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Input Capacitance
Test Conditions
Symbol
RL = 2.0 kW, VOUT = 3.0 VP-P
AVOL
RIN
−
TA = 25°C
0°C v TA v 70°C
Min
Typ
Max
250
80
400
100
600
120
−
10
8.0
4.0
30
−
−
−
−
Unit
V/V
kW
Gain 2 (Note 4)
CIN
−
2.0
−
pF
Input Offset Current
TA = 25°C
0°C v TA v 70°C
IOS
−
−
0.4
−
5.0
6.0
mA
Input Bias Current
TA = 25°C
0°C v TA v 70°C
IBIAS
−
−
9.0
−
30
40
mA
Input Noise Voltage
BW 1.0 kHz to 10 MHz
VNOISE
−
12
−
mVRMS
Input Voltage Range
−
VIN
"1.0
−
−
V
VCM "1.0 V, f < 100 kHz, TA = 25°C
VCM "1.0 V, f < 100 kHz,
0°C v TA v 70°C
VCM "1.0 V, f < 5.0 MHz
CMRR
60
50
86
−
−
−
dB
−
60
−
DVS = "0.5 V
PSRR
50
70
−
−
−
−
−
−
−
0.35
−
1.5
1.5
0.75
1.0
Common-Mode Rejection Ratio
Gain 2 (Note 4)
Supply Voltage Rejection Ratio
Gain 2 (Note 4)
Output Offset Voltage
Gain 1
Gain 2 (Note 4)
Gain 3 (Note 5)
Gain 3 (Note 5)
Output Common-Mode Voltage
Output Voltage Swing Differential
RL = R
RL = R
RL = R, TA = 25°C
RL = R, 0°C v TA v 70°C
V
RL = R, TA = 25°C
VCM
2.4
2.9
3.4
V
RL = 2.0 kW, TA = 25°C
RL = 2.0 kW, 0°C v TA v 70°C
VOUT
3.0
2.8
4.0
−
−
−
V
−
ROUT
−
20
−
W
RL = R, TA = 25°C
RL = R, 0°C v TA v 70°C
ICC
−
−
18
−
24
27
mA
Output Resistance
Power Supply Current
VOS
dB
AC ELECTRICAL CHARACTERISTICS (TA = +25°C VSS = "6.0 V, VCM = 0, unless otherwise noted. Recommended operating
supply voltages VS = "6.0 V.)
Characteristic
Test Conditions
Symbol
−
BW
Bandwidth
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Rise Time
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
VOUT = 1.0 VP−P
Propagation Delay
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
VOUT = 1.0 VP−P
2.
3.
4.
5.
tR
tPD
Gain select Pins G1A and G1B connected together.
Gain select Pins G2A and G2B connected together.
Applies to 14-pin version only.
All gain select pins open.
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3
Min
Typ
Max
−
−
40
90
−
−
−
−
10.5
4.5
12
−
−
−
7.5
6.0
10
−
Unit
MHz
ns
ns
NE592
100
7.0
GAIN 2
VS = +6V
TA = 25oC
90
80
OUTPUT VOLTAGE SWING − Vpp
70
60
50
40
30
20
10
0
10k
100k
1M
10M
1.6
VS = +6V
TA = 25oC
RL = 1kW
6.0
5.0
1.0
0.8
0.4
0
1.0
Figure 2. Common−Mode
Rejection Ratio as a Function
of Frequency
-0.2
1
5 10
50 100
OUTPUT VOLTAGE − V
12
Figure 4. Pulse Response
1.6
GAIN 2
TA = 25oC
RL = 1kW
3
4
5
6
7
8
VS = +8V
1.0
VS = +6V
0.8
VS = +3V
0.6
0.4
0.2
0
1.06
1.04
1.02
1.00
GAIN 2
0.98
0.96
0.94
GAIN 1
0.92
0.90
0
10
20
30
40
50
60
70
TEMPERATURE − oC
Figure 8. Voltage Gain as a
Function of Temperature
Tamb = 0oC
0.8
TA = 25oC
0.6
0.4
TA = 70oC
0.2
0
5 10 15 20 25 30 35
TIME − ns
-15 -10 -5
0
5
10 15 20 25 30 35
TIME − ns
Figure 6. Pulse Response as
a Function of Supply Voltage
SINGLE ENDED VOLTAGE GAIN − dB
VS = +6V
1.08
1.0
-0.4
0
SUPPLY VOLTAGE − +V
1.10
1.2
-0.2
-0.4
-15 -10 -5
Figure 5. Supply Current as
a Function of Temperature
GAIN 2
VS = +6V
RL = 1kW
1.4
Figure 7. Pulse Response as
a Function of Temperature
1.4
60
GAIN 2
VS = +6V
RL = 1kW
50
40
30
TA = −55oC
20
TA = 25oC
10
TA = 125oC
0
Tamb = 25oC
1.3
RELATIVE VOLTAGE GAIN
8
10 15 20 25 30 35
Figure 3. Output Voltage Swing
as a Function of Frequency
1.2
16
5
TIME − ns
1.4
20
0
FREQUENCY − MHz
-0.2
RELATIVE VOLTAGE GAIN
-0.4
-15 -10 -5
500 1000
1.6
24
GAIN 1
0.2
2.0
0
TA = 25oC
GAIN 2
0.6
3.0
FREQUENCY − Hz
SUPPLY CURRENT − mA
1.2
4.0
100M
28
VS = +6V
TA = 25oC
RL = 1k
1.4
OUTPUT VOLTAGE − V
COMMON-MODE REJECTION RATIO − dB
TYPICAL PERFORMANCE CHARACTERISTICS
1.2
1.1
GAIN 2
1.0
0.9
0.8
GAIN 1
0.7
0.6
0.5
0.4
-10
1
5 10
50 100
500 1000
FREQUENCY − MHz
Figure 9. Gain vs. Frequency
as a Function of Temperature
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4
3
4
5
6
7
8
SUPPLY VOLTAGE − +V
Figure 10. Voltage Gain as a
Function of Supply Voltage
NE592
1000
60
0.2mF
GAIN 2
TA = 25oC
RL = 1kW
50
40
14
12
11
592
1
3
30
4
8
0.2mF
7
VS = +8V
20
51W
VS = +6V
10
0
-10
DIFFERENTIAL VOLTAGE GAIN − V/V
SINGLE ENDED VOLTAGE GAIN − dB
TYPICAL PERFORMANCE CHARACTERISTICS
51W
VS = +3V
1
5
10
RADJ
1kW
1kW
VS = +6V TA = 25oC
50 100
VS = +6V
f = 100kHz
TA = 25oC
FIGURE 2
100
10
1
.1
.01
1
500 1000
10
Figure 11. Gain vs. Frequency
as a Function of Supply Voltage
VS = +6V
19
18
17
16
15
50
40
30
20
10
-20
20
60
100
140
TEMPERATURE − oC
70
VS = +6V
TA = 25oC
INPUT RESISTANCE − KΩ
OUTPUT VOLTAGE SWING − Vpp
20 40 60 80 100 120 140 160 180 200
5.0
4.0
3.0
2.0
VOLTAGE
4.0
3.0
CURRENT
2.0
1.0
50
40
30
20
10
0
0
5K 10K
Figure 17. Output Voltage
Swing as a Function of Load
Resistance
4.0
5.0
6.0
7.0
SUPPLY VOLTAGE − +V
8.0
Figure 16. Output Voltage and
Current Swing as a Function of
Supply Voltage
100
GAIN 2
VS = +6V
60
1.0
50 100
500 1K
LOAD RESISTANCE − W
5.0
3.0
Figure 15. Differential Overdrive
Recovery Time
7.0
10
TA = 25oC
6.0
DIFFERENTIAL INPUT VOLTAGE − mV
Figure 14. Supply Current as a
Function of Temperature
6.0
1M
0
0
INPUT NOISE VOLTAGE −μ Vrms
-60
10K 100K
7.0
VS = +6V
TA = 25oC
GAIN 2
60
0
14
1K
Figure 13. Voltage Gain as a
Function of RADJ (Figure 2)
OUTPUT VOLTAGE SWING − V OR
OUTPUT SINK CURRENT − mA
OVERDRIVE RECOVERY TIME − ns
SUPPLY CURRENT − mA
Figure 12. Voltage Gain Adjust
Circuit
70
21
20
100
RADJ − W
FREQUENCY − MHz
GAIN 2
VS = +6V
TA = 25oC
BW = 10MHz
90
80
70
60
50
40
30
20
10
0
-60
-20 0 20
60
100
TEMPERATURE − oC
140
Figure 18. Input Resistance as a
Function of Temperature
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5
1
10
100
1K
SOURCE RESISTANCE − W
10K
Figure 19. Input Noise Voltage
as a Function of Source
Resistance
NE592
TYPICAL PERFORMANCE CHARACTERISTICS
0
GAIN 2
VS = +6V
TA = 25oC
-5
PHASE SHIFT − DEGREES
PHASE SHIFT − DEGREES
0
-10
-15
-20
VS = +6V
TA = 25oC
-50
-100
-150
GAIN 2
-200
GAIN 1
-250
-300
-350
-25
0
1
2
3
4
5
6
7
8
9
1
10
10
100
FREQUENCY − MHz
1000
FREQUENCY − MHz
Figure 20. Phase Shift as a
Function of Frequency
GAIN 1
VOLTAGE GAIN − dB
50
40
VS = +6V
Tamb = 25oC
RL = 1KW
VS = +6V
TA = 25oC
GAIN 3
40
30
VOLTAGE GAIN − dB
60
Figure 21. Phase Shift as a
Function of Frequency
GAIN 2
30
20
10
20
10
0
-10
-20
-30
0
-40
1
10
100
-50
.01
1000
FREQUENCY − MHz
.1
1
10
100
FREQUENCY − MHz
Figure 23. Voltage Gain as a
Function of Frequency
Figure 22. Voltage Gain as a
Function of Frequency
TEST CIRCUITS (TA = 25°C, unless otherwise noted.)
VIN
592
51W
RL
VOUT
51W
0.2mF
ein
592
0.2mF
eout eout
51W
1000
51W
1kW
1kW
Figure 24. Test Circuits
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6
NE592
+6
2re
11
14
NOTE:
V 0(s)
v 1(s)
V1
[
1.4 @ 10 4
Z(S) ) 2re
[
1.4 @ 104
Z(S) ) 32
10
V0
592
1
5
4
7
Z
-6
+6
Basic Configuration
0.2mF
+5
+6
14
10
14
11
4
10
8
529
7
V1
Q
7
2
5
7 0.2mF
5
C
2KW
Q
-6
3
NOTE:
6
For frequency F1 << 1/2 π (32) C
-6
V
DIFFERENTIATOR/AMPLIFIER
ZERO CROSSING DETECTOR
O
] 1.4 x 10 4C
dVi
dT
Differentiation with High
Common-Mode Noise Rejection
Disc/Tape Phase-Modulated Readback Systems
Figure 25. Typical Applications
R
V0 (s) TRANSFER
V1 (s) FUNCTION
FILTER
TYPE
Z NETWORK
L
1.4
LOW PASS
R
C
1.4
HIGH PASS
R
L
C
BAND PASS
1.4
L
L
R
10 4
10 4
ƪ
ƫ
ƪ
ƫ
1
s ) RńL
s
s ) 1ńRC
10 4
ƪ
10 4
ƪ
ƫ
s
s 2 ) RńLs ) 1ńLC
L
R
BAND REJECT
C
NOTES:
In the networks above, the R value used is assumed to include 2re, or approximately 32W.
S = jW
W = 2πf
Figure 26. Filter Networks
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7
2KW
V0
1
4
AMPLITUDE: 1-10 mV p-p
FREQUENCY: 1-4 MHz
READ HEAD
592
8
5
4
10
8
1
592
1
9
11
1.4
R
s 2 ) 1ńLC
ƫ
s 2 ) 1ńLC ) sńRC
NE592
ORDERING INFORMATION
Device
Temperature Range
Package
NE592D8
SOIC−8
NE592D8G
SOIC−8
(Pb−Free)
NE592D8R2
SOIC−8
NE592D8R2G
SOIC−8
(Pb−Free)
NE592N8
98 Units/Rail
2500 / Tape & Reel
PDIP−8
NE592N8G
NE592D14
Shipping†
PDIP−8
(Pb−Free)
0 to +70°C
50 Units/Rail
SOIC−14
NE592D14G
SOIC−14
(Pb−Free)
NE592D14R2
SOIC−14
NE592D14R2G
SOIC−14
(Pb−Free)
NE592N14
PDIP−14
NE592N14G
PDIP−14
(Pb−Free)
55 Units/Rail
2500 / Tape & Reel
25 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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8
NE592
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AH
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
1
0.25 (0.010)
M
Y
M
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0 _
8 _
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
NE592
PACKAGE DIMENSIONS
PDIP−8
N SUFFIX
CASE 626−05
ISSUE L
8
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5
−B−
1
4
F
−A−
NOTE 2
L
C
J
−T−
N
SEATING
PLANE
D
H
M
K
G
0.13 (0.005)
M
T A
M
B
M
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10
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
9.40
10.16
6.10
6.60
3.94
4.45
0.38
0.51
1.02
1.78
2.54 BSC
0.76
1.27
0.20
0.30
2.92
3.43
7.62 BSC
−−−
10_
0.76
1.01
INCHES
MIN
MAX
0.370
0.400
0.240
0.260
0.155
0.175
0.015
0.020
0.040
0.070
0.100 BSC
0.030
0.050
0.008
0.012
0.115
0.135
0.300 BSC
−−−
10_
0.030
0.040
NE592
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
−A−
14
8
−B−
P 7 PL
0.25 (0.010)
M
7
1
G
−T−
D 14 PL
0.25 (0.010)
T B
S
A
DIM
A
B
C
D
F
G
J
K
M
P
R
J
M
K
M
F
R X 45 _
C
SEATING
PLANE
B
M
S
SOLDERING FOOTPRINT*
7X
7.04
14X
1.52
1
14X
0.58
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0_
7_
0.228 0.244
0.010 0.019
NE592
PACKAGE DIMENSIONS
PDIP−14
CASE 646−06
ISSUE P
14
8
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
A
F
L
N
C
−T−
SEATING
PLANE
H
G
D 14 PL
J
K
0.13 (0.005)
M
DIM
A
B
C
D
F
G
H
J
K
L
M
N
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.290
0.310
−−−
10 _
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.37
7.87
−−−
10 _
0.38
1.01
M
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