NE592 D

NE592
Video Amplifier
The NE592 is a monolithic, two-stage, differential output,
wideband video amplifier. It offers fixed gains of 100 and 400
without external components and adjustable gains from 400 to 0 with
one external resistor. The input stage has been designed so that with
the addition of a few external reactive elements between the gain
select terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
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MARKING
DIAGRAMS
8
1
SOIC−8
D SUFFIX
CASE 751
NE592
ALYW
G
Features
•
•
•
•
•
•
•
1
120 MHz Unity Gain Bandwidth
Adjustable Gains from 0 to 400
Adjustable Pass Band
No Frequency Compensation Required
Wave Shaping with Minimal External Components
MIL-STD Processing Available
These Devices are Pb−Free and are RoHS Compliant
14
1
NE592D14G
AWLYWW
1
A
L, WL
Y
W, WW
G or G
Applications
•
•
•
•
•
SOIC−14
D SUFFIX
CASE 751A
Floppy Disk Head Amplifier
Video Amplifier
Pulse Amplifier in Communications
Magnetic Memory
Video Recorder Systems
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
+V
R1
R2
R8
R10
R9
Q6
Q5
Q4
Q3
OUTPUT 1
R11
INPUT 1
INPUT 2
Q1
Q2
G1A
R12
G1B
R3
OUTPUT 2
R5
G2A
G2B
Q7B
Q8
Q9
Q10
Q11
Q7A
R7A
R7B
R15
R16
R13
R14
‐V
Figure 1. Block Diagram
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 5
1
Publication Order Number:
NE592/D
NE592
PIN CONNECTIONS
SOIC-14
INPUT 2
NC
1
SOIC-8
14
2
13
INPUT 2
1
8
INPUT 1
G1B GAIN SELECT
INPUT 1
NC
G2B GAIN SELECT
3
12
G2A GAIN SELECT
G1B GAIN SELECT
4
11
G1A GAIN SELECT
V‐
5
10
V+
NC
6
9
NC
OUTPUT 2
7
8
OUTPUT 1
2
7
G1A GAIN SELECT
V‐ 3
6
V+
4
5
OUTPUT 1
OUTPUT 2
(Top View)
(Top View)
MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)
Symbol
Value
Unit
Supply Voltage
Rating
VCC
"8.0
V
Differential Input Voltage
VIN
"5.0
V
Common-Mode Input Voltage
VCM
"6.0
V
Output Current
IOUT
10
mA
Operating Ambient Temperature Range
TA
0 to +70
°C
Operating Junction Temperature
TJ
150
°C
TSTG
65 to +150
°C
Storage Temperature Range
Maximum Power Dissipation, TA = 25°C (Still Air) (Note 1)
PD MAX
SOIC-14 Package
SOIC-8 Package
Thermal Resistance, Junction−to−Ambient
SOIC-14 Package
SOIC-8 Package
W
0.98
0.79
RqJA
°C/W
145
182
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Derate above 25°C at the following rates:
SOIC-14 package at 6.9 mW/°C
SOIC-8 package at 5.5 mW/°C
www.onsemi.com
2
NE592
DC ELECTRICAL CHARACTERISTICS (VSS = "6.0 V, VCM = 0, typicals at TA = +25°C, min and max at 0°C v TA v 70°C, unless
otherwise noted. Recommended operating supply voltages VS = "6.0 V.)
Characteristic
Differential Voltage Gain
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Input Resistance
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Input Capacitance
Test Conditions
Symbol
Min
Typ
Max
250
80
400
100
600
120
−
10
8.0
4.0
30
−
−
−
−
AVOL
RL = 2.0 kW, VOUT = 3.0 VP-P
Unit
V/V
RIN
−
TA = 25°C
0°C v TA v 70°C
kW
Gain 2 (Note 4)
CIN
−
2.0
−
pF
Input Offset Current
TA = 25°C
0°C v TA v 70°C
IOS
−
−
0.4
−
5.0
6.0
mA
Input Bias Current
TA = 25°C
0°C v TA v 70°C
IBIAS
−
−
9.0
−
30
40
mA
Input Noise Voltage
BW 1.0 kHz to 10 MHz
VNOISE
−
12
−
mVRMS
Input Voltage Range
−
VIN
"1.0
−
−
V
VCM "1.0 V, f < 100 kHz, TA = 25°C
VCM "1.0 V, f < 100 kHz,
0°C v TA v 70°C
VCM "1.0 V, f < 5.0 MHz
CMRR
60
50
86
−
−
−
dB
−
60
−
DVS = "0.5 V
PSRR
50
70
−
−
−
−
−
−
−
0.35
−
1.5
1.5
0.75
1.0
Common-Mode Rejection Ratio
Gain 2 (Note 4)
Supply Voltage Rejection Ratio
Gain 2 (Note 4)
Output Offset Voltage
Gain 1
Gain 2 (Note 4)
Gain 3 (Note 5)
Gain 3 (Note 5)
Output Common-Mode Voltage
Output Voltage Swing Differential
RL = R
RL = R
RL = R, TA = 25°C
RL = R, 0°C v TA v 70°C
VOS
V
RL = R, TA = 25°C
VCM
2.4
2.9
3.4
V
RL = 2.0 kW, TA = 25°C
RL = 2.0 kW, 0°C v TA v 70°C
VOUT
3.0
2.8
4.0
−
−
−
V
−
ROUT
−
20
−
W
RL = R, TA = 25°C
RL = R, 0°C v TA v 70°C
ICC
−
−
18
−
24
27
mA
Output Resistance
Power Supply Current
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (TA = +25°C VSS = "6.0 V, VCM = 0, unless otherwise noted. Recommended operating
supply voltages VS = "6.0 V.)
Characteristic
Test Conditions
Symbol
−
BW
Bandwidth
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Rise Time
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
VOUT = 1.0 VP−P
Propagation Delay
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
VOUT = 1.0 VP−P
2.
3.
4.
5.
Min
Typ
Max
−
−
40
90
−
−
−
−
10.5
4.5
12
−
−
−
7.5
6.0
10
−
MHz
tR
ns
tPD
Gain select Pins G1A and G1B connected together.
Gain select Pins G2A and G2B connected together.
Applies to 14-pin version only.
All gain select pins open.
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3
Unit
ns
NE592
100
7.0
GAIN 2
VS = +6V
TA = 25oC
90
80
OUTPUT VOLTAGE SWING − Vpp
70
60
50
40
30
20
10
0
10k
1.6
VS = +6V
TA = 25oC
RL = 1kW
6.0
5.0
0.8
1M
10M
0.4
0
1.0
-0.2
1
5 10
50 100
-0.4
-15 -10 -5
500 1000
Figure 4. Pulse Response
1.6
GAIN 2
TA = 25oC
RL = 1kW
12
8
3
4
5
6
7
8
VS = +6V
0.8
VS = +3V
0.6
0.4
0.2
1.06
1.04
1.02
1.00
GAIN 2
0.98
0.96
0.94
GAIN 1
0.92
0.90
10
20
30
40
50
60
70
TEMPERATURE − oC
Figure 8. Voltage Gain as a
Function of Temperature
TA = 25oC
0.6
0.4
TA = 70oC
0.2
0
-0.4
0
-15 -10 -5
5 10 15 20 25 30 35
TIME − ns
0
5
10 15 20 25 30 35
TIME − ns
Figure 6. Pulse Response as
a Function of Supply Voltage
Figure 7. Pulse Response as
a Function of Temperature
1.4
60
GAIN 2
VS = +6V
RL = 1kW
50
40
30
TA = −55oC
20
TA = 25oC
10
TA = 125oC
0
Tamb = 25oC
1.3
1.2
1.1
GAIN 2
1.0
0.9
0.8
GAIN 1
0.7
0.6
0.5
0.4
-10
0
Tamb = 0oC
0.8
-0.2
SINGLE ENDED VOLTAGE GAIN − dB
VS = +6V
1.0
0
Figure 5. Supply Current as
a Function of Temperature
1.08
1.2
-0.2
SUPPLY VOLTAGE − +V
1.10
VS = +8V
1.0
-0.4
-15 -10 -5
GAIN 2
VS = +6V
RL = 1kW
1.4
OUTPUT VOLTAGE − V
OUTPUT VOLTAGE − V
16
10 15 20 25 30 35
Figure 3. Output Voltage Swing
as a Function of Frequency
1.2
20
5
TIME − ns
1.4
24
0
FREQUENCY − MHz
1.6
TA = 25oC
GAIN 1
0.2
2.0
100M
28
GAIN 2
0.6
3.0
Figure 2. Common−Mode
Rejection Ratio as a Function
of Frequency
SUPPLY CURRENT − mA
1.0
4.0
FREQUENCY − Hz
RELATIVE VOLTAGE GAIN
1.2
0
100k
VS = +6V
TA = 25oC
RL = 1k
1.4
RELATIVE VOLTAGE GAIN
COMMON-MODE REJECTION RATIO − dB
TYPICAL PERFORMANCE CHARACTERISTICS
1
5 10
50 100
500 1000
FREQUENCY − MHz
Figure 9. Gain vs. Frequency
as a Function of Temperature
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4
3
4
5
6
7
8
SUPPLY VOLTAGE − +V
Figure 10. Voltage Gain as a
Function of Supply Voltage
NE592
1000
60
0.2mF
GAIN 2
TA = 25oC
RL = 1kW
50
DIFFERENTIAL VOLTAGE GAIN − V/V
SINGLE ENDED VOLTAGE GAIN − dB
TYPICAL PERFORMANCE CHARACTERISTICS
14
40
12
1
3
30
11
8
592
4
0.2mF
7
VS = +8V
20
51W
VS = +6V
10
0
51W
VS = +3V
5
10
1kW
1kW
VS = +6V TA = 25oC
-10
1
RADJ
50 100
VS = +6V
f = 100kHz
TA = 25oC
FIGURE 2
100
10
1
.1
.01
1
500 1000
10
Figure 11. Gain vs. Frequency
as a Function of Supply Voltage
VS = +6V
19
18
17
16
15
-20
20
60
50
40
30
20
10
100
140
5.0
VOLTAGE
4.0
3.0
CURRENT
2.0
1.0
3.0
4.0
3.0
2.0
60
50
40
30
20
1.0
10
0
0
5K 10K
Figure 17. Output Voltage
Swing as a Function of Load
Resistance
8.0
100
GAIN 2
VS = +6V
INPUT NOISE VOLTAGE −μ Vrms
5.0
4.0
5.0
6.0
7.0
SUPPLY VOLTAGE − +V
Figure 16. Output Voltage and
Current Swing as a Function of
Supply Voltage
70
VS = +6V
TA = 25oC
INPUT RESISTANCE − KΩ
OUTPUT VOLTAGE SWING − Vpp
20 40 60 80 100 120 140 160 180 200
Figure 15. Differential Overdrive
Recovery Time
7.0
50 100
500 1K
LOAD RESISTANCE − W
TA = 25oC
6.0
DIFFERENTIAL INPUT VOLTAGE − mV
Figure 14. Supply Current as a
Function of Temperature
10
1M
0
0
TEMPERATURE − oC
6.0
10K 100K
7.0
VS = +6V
TA = 25oC
GAIN 2
60
0
14
-60
1K
Figure 13. Voltage Gain as a
Function of RADJ (Figure 2)
OUTPUT VOLTAGE SWING − V OR
OUTPUT SINK CURRENT − mA
OVERDRIVE RECOVERY TIME − ns
SUPPLY CURRENT − mA
Figure 12. Voltage Gain Adjust
Circuit
70
21
20
100
RADJ − W
FREQUENCY − MHz
GAIN 2
VS = +6V
TA = 25oC
BW = 10MHz
90
80
70
60
50
40
30
20
10
0
-60
-20 0 20
60
100
TEMPERATURE − oC
140
Figure 18. Input Resistance as a
Function of Temperature
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5
1
10
100
1K
SOURCE RESISTANCE − W
10K
Figure 19. Input Noise Voltage
as a Function of Source
Resistance
NE592
TYPICAL PERFORMANCE CHARACTERISTICS
0
GAIN 2
VS = +6V
TA = 25oC
-5
VS = +6V
TA = 25oC
-50
PHASE SHIFT − DEGREES
PHASE SHIFT − DEGREES
0
-10
-15
-20
-100
-150
GAIN 2
-200
GAIN 1
-250
-300
-350
-25
0
1
2
3
4
5
6
7
8
9
1
10
10
100
FREQUENCY − MHz
1000
FREQUENCY − MHz
Figure 20. Phase Shift as a
Function of Frequency
Figure 21. Phase Shift as a
Function of Frequency
60
VOLTAGE GAIN − dB
40
VS = +6V
Tamb = 25oC
RL = 1KW
VS = +6V
TA = 25oC
GAIN 3
40
30
VOLTAGE GAIN − dB
GAIN 1
50
GAIN 2
30
20
10
20
10
0
-10
-20
-30
0
-40
1
10
100
-50
.01
1000
FREQUENCY − MHz
.1
1
10
100
FREQUENCY − MHz
Figure 23. Voltage Gain as a
Function of Frequency
Figure 22. Voltage Gain as a
Function of Frequency
TEST CIRCUITS (TA = 25°C, unless otherwise noted.)
VIN
592
51W
RL
VOUT
51W
0.2mF
ein
592
0.2mF
eout eout
51W
1000
51W
1kW
1kW
Figure 24. Test Circuits
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6
NE592
+6
2re
11
14
NOTE:
V 0(s)
v 1(s)
V1
[
[
10
V0
592
1
7
1.4 @ 10 4
Z(S) ) 2re
5
4
Z
1.4 @ 104
Z(S) ) 32
-6
+6
Basic Configuration
0.2mF
+5
+6
14
10
9
4
V1
7
592
Q
7 0.2mF
4
7
2
C
5
2KW
Q
-6
3
AMPLITUDE: 1‐10 mV p‐p
FREQUENCY: 1‐4 MHz
NOTE:
6
For frequency F1 << 1/2 π (32) C
‐6
V
READ HEAD
5
8
5
4
V0
1
592
1
DIFFERENTIATOR/AMPLIFIER
O
] 1.4 x 10 4C
ZERO CROSSING DETECTOR
dVi
dT
Differentiation with High
Common-Mode Noise Rejection
Disc/Tape Phase-Modulated Readback Systems
Figure 25. Typical Applications
V0 (s) TRANSFER
V1 (s) FUNCTION
FILTER
TYPE
Z NETWORK
R
L
10 4
1.4
LOW PASS
R
L
C
10 4
1.4
L
C
BAND PASS
1.4
10 4
ƪ
10 4
ƪ
L
ƪ
ƫ
ƪ
ƫ
1
s ) RńL
s
s ) 1ńRC
R
HIGH PASS
R
2KW
8
529
11
10
10
8
1
14
11
ƫ
s
s 2 ) RńLs ) 1ńLC
L
R
1.4
BAND REJECT
C
NOTES:
In the networks above, the R value used is assumed to include 2re, or approximately 32W.
S = jW
W = 2πf
Figure 26. Filter Networks
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7
R
s 2 ) 1ńLC
ƫ
s 2 ) 1ńLC ) sńRC
NE592
ORDERING INFORMATION
Device
NE592D8G
NE592D8R2G
NE592D14G
Package
Shipping†
SOIC−8
(Pb−Free)
98 Units/Rail
Temperature Range
0 to +70°C
SOIC−14
(Pb−Free)
NE592D14R2G
2500 / Tape & Reel
55 Units/Rail
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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8
NE592
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0 _
8 _
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
NE592
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE L
D
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
b
0.25
M
C A
S
B
S
0.10
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent− Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product
or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in
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Phone: 81−3−5817−1050
www.onsemi.com
10
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NE592/D