MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS Features • Lead Formed for Surface Mount Application in Plastic Sleeves • • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage − VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Packages MARKING DIAGRAMS 4 1 2 3 AYWW J4 xH11G DPAK CASE 369C STYLE 1 4 AYWW J4 xH11G MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol Max Unit VCEO 80 Vdc VEB 5 Vdc IC 8 16 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg W 20 0.16 W/°C W 1.75 0.014 W/°C −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W TL 260 °C Lead Temperature for Soldering 2 3 A Y WW J4xH11 G DPAK−3 CASE 369D STYLE 1 = = = = Assembly Location Year Work Week Device Code x = 4 or 5 = Pb−Free Package ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 1 See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 10 1 Publication Order Number: MJD44H11/D MJD44H11 (NPN) MJD45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 80 Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES 1.0 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO 1.0 mA Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) 1 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) 1.5 Vdc ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) hFE DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) 60 − 40 DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) MJD44H11 MJD45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11 MJD45H11 Ccb fT pF 45 130 MHz 85 90 SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11 MJD45H11 Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 MJD45H11 Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc MJD44H11 MJD45H11 http://onsemi.com 2 td + tr ts tf ns 300 135 ns 500 500 ns 140 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD44H11 (NPN) MJD45H11 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 1. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 20 10 500ms 5 3 2 dc 100ms 1ms 5ms 1 THERMAL LIMIT @ TC = 25°C WIRE BOND LIMIT 0.5 0.3 0.1 0.05 1 50 5 7 10 20 30 3 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 0.02 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 125 150 MJD44H11 (NPN) MJD45H11 (PNP) 1000 1000 VCE = 1 V 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 25°C 100 -40°C 10 0.01 0.1 1 150°C 25°C 100 -40°C 10 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 1000 hFE , DC CURRENT GAIN 150°C 25°C -40°C 10 0.01 COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 4 V 0.1 1 100 -40°C 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain IC/IB = 10 -40°C 25°C 150°C 0.01 0.1 25°C IC, COLLECTOR CURRENT (AMPS) 1 0.1 150°C 10 0.01 10 COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE , DC CURRENT GAIN VCE = 4 V 100 10 IC, COLLECTOR CURRENT (AMPS) 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC/IB = 10 0.1 -40°C 25°C 150°C 0.01 0.1 Figure 8. MJD44H11 Saturation Voltage VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJD45H11 Saturation Voltage VCE(sat) http://onsemi.com 4 10 10 1.2 BASE-EMITTER SATURATION VOLTAGE (V) BASE-EMITTER SATURATION VOLTAGE (V) MJD44H11 (NPN) MJD45H11 (PNP) IC/IB = 10 1.1 1 0.9 -40°C 0.8 0.7 25°C 0.6 150°C 0.5 0.4 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1.2 IC/IB = 10 1.1 1 0.9 0.8 0.7 25°C 0.6 150°C 0.5 0.4 0.1 10 -40°C Figure 10. MJD44H11 Saturation Voltage VBE(sat) 1 IC, COLLECTOR CURRENT (AMPS) Figure 11. MJD45H11 Saturation Voltage VBE(sat) http://onsemi.com 5 10 MJD44H11 (NPN) MJD45H11 (PNP) ORDERING INFORMATION Device Package Type Package MJD44H11G DPAK (Pb−Free) 369C MJD44H11−1G DPAK−3 (Pb−Free) 369D MJD44H11RLG DPAK (Pb−Free) MJD44H11T4G DPAK (Pb−Free) MJD44H11T5G DPAK (Pb−Free) MJD45H11G DPAK (Pb−Free) MJD45H11−1G DPAK−3 (Pb−Free) MJD45H11RLG DPAK (Pb−Free) MJD45H11T4 MJD45H11T4G Shipping† 75 Units / Rail 1800 Tape & Reel 369C 2500 Tape & Reel 75 Units / Rail 369D 1800 Tape & Reel 369C DPAK 2500 Tape & Reel DPAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD44H11/D