NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for high−gain audio amplifier applications. Features • High DC Current Gain − • • • • • • hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: ♦ Human Body Model, 3B > 8000 V ♦ Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Packages SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS COLLECTOR 2,4 1 BASE 3 EMITTER 4 1 2 MAXIMUM RATINGS Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Symbol Value Unit VCB 50 Vdc VCEO 50 Vdc VEB 5 Vdc Collector Current Continuous Peak IC Base Current IB Total Device Dissipation @ TC = 25°C Derate above 25°C PD Total Device Dissipation @ TA = 25°C* Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg MARKING DIAGRAM Adc 2 3 0.4 Adc 15 0.1 W W/°C 1.68 0.011 W W/°C −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 DPAK CASE 369C STYLE 1 AYWW J 2873G A Y WW G = Assembly Location = Year = Work Week = Pb−Free Device ORDERING INFORMATION Package Shipping† NJD2873T4G DPAK (Pb−Free) 2,500 Units / Reel NJVNJD2873T4G DPAK (Pb−Free) 2,500 Units / Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 14 1 Publication Order Number: NJD2873T4/D NJD2873T4G, NJVNJD2873T4G THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) RqJC RqJA Max 10 89.3 Unit °C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 50 − − 100 − 100 120 40 80 360 − 360 − 0.3 − 1.2 − − 1.2 0.95 65 − − 80 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 10 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 0.5 A, VCE = 2 V) (IC = 2 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) hFE Collector−Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 A) VCE(sat) Base−Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 Adc) VBE(sat) Base−Emitter On Voltage (Note 2) (IC = 1 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 3. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 MHz pF NJD2873T4G, NJVNJD2873T4G TYPICAL CHARACTERISTICS PD , POWER DISSIPATION (WATTS) 25 20 15 10 5 0 25 0 50 75 100 125 150 175 200 T, TEMPERATURE (°C) Figure 1. Power Derating 0.4 100°C 100 10 0.01 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V 25°C −40°C 0.6 0.5 0.4 0.3 100°C 150°C Ic/Ib = 20 175°C 0.2 0.01 0.2 0.1 Ic/Ib = 20 Figure 3. Collector−Emitter Saturation Voltage 0.9 25°C 25°C −40°C Figure 2. DC Current Gain 1.0 0.7 100°C 0 0.01 10 1.1 −40°C 150°C 0.3 IC, COLLECTOR CURRENT (AMPS) 1 1.2 0.8 175°C 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 VBE(on), BASE−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 175°C 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1000 0.1 1 10 1.2 1.1 10 VCE = 2.0 V −40°C 1.0 25°C 0.9 100°C 150°C 175°C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage http://onsemi.com 3 10 NJD2873T4G, NJVNJD2873T4G 1A 0.2 100 Cobo 10 1 0.01 100 ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) IC = 2 A 100 mA 0.4 Cibo C, CAPACITANCE (pF) 10 mA 0.6 TA = 25°C TA = 25°C 0.8 0 0.1 1 100 10 1000 0.1 1 10 IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 6. Saturation Region Figure 7. Capacitance 100 10000 VCE = 10 V TA = 25°C 1 mS 1000 100 0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1000 500 mA IC, COLLECTOR CURRENT VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1.0 10 mS 100 mS 1S 100 10 1 1 10 10 100 Figure 9. Capacitance 0.2 0.2 0.1 0.01 0.02 1 Figure 8. Saturation Region 0.3 0.02 10000 VCE, COLLECTOR EMITTER VOLTAGE (V) D = 0.5 0.03 1000 IC, COLLECTOR CURRENT (mA) 1 0.7 0.5 0.1 0.07 0.05 100 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 10. Thermal Response http://onsemi.com 4 10 20 50 100 200 NJD2873T4G, NJVNJD2873T4G PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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