ONSEMI MBR6045PT

MBR6045PT
SWITCHMODE™
Power Rectifier
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
Pb−Free Packages are Available*
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SCHOTTKY BARRIER
RECTIFIER
60 AMPERES
45 VOLTS
Applications
• Power Supply – Output Rectification
• Power Management
• Instrumentation
1
2,4
3
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
ESD Rating:
Human Body Model 3B
Machine Model C
4
SOT−93
CASE 340D
STYLE 2
1
2
3
MARKING DIAGRAM
AYWWG
MBR6045PT
MBR6045PT
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MBR6045PT
MBR6045PTG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 8
1
Package
Shipping †
SOT−93
30 Units/Rail
SOT−93
(Pb−Free)
30 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR6045PT/D
MBR6045PT
MAXIMUM RATINGS
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Per Diode
Per Device
IF(AV)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz @ TC = 90°C) Per Diode
IFRM
60
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
500
A
Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Peak Surge Junction Temperature (Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change
dv/dt
10,000
V/ms
A
30
60
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
°C/W
Maximum Thermal Resistance, Junction−to−Case
Min. Pad
RqJC
1.0
Maximum Thermal Resistance, Junction−to−Ambient
Min. Pad
RqJA
60
Min
Typical
Max
−
−
−
0.55
0.51
0.70
0.62
0.55
0.75
−
−
0.2
35
1.0
50
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 2)
(iF = 30 Amps, Tj = 25°C)
(iF = 30 Amps, Tj = 125°C)
(iF = 60 Amps, Tj = 25°C)
vF
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 125°C)
iR
Unit
V
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
I R, REVERSE CURRENT (mA)
1000
100
TC = 150°C
10
TC = 100°C
1
0.1
TC = 25°C
0.01
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
10
150°C
100°C
TC = 25°C
1
100
Figure 1. Typical Reverse Current
200
300
400
500
600
Figure 2. Typical Forward Voltage
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2
700
vF, INSTANTANEOUS FORWARD VOLTAGE (mV)
800
MBR6045PT
PACKAGE DIMENSIONS
SOT−93
(TO−218)
CASE 340D−02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
Q
B
E
U
S
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
2
3
D
J
H
V
MILLIMETERS
MIN
MAX
−−− 20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
−−− 16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
STYLE 2:
PIN 1.
2.
3.
4.
G
INCHES
MIN
MAX
−−− 0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
−−− 0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
ANODE
CATHODE
ANODE
CATHODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
3
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR6045PT/D