MBRF10H150CTG SWITCHMODE™ Power Rectifier 150 V, 10 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total (5 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 150 VOLTS 1 2, 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 3 MARKING DIAGRAM Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220 FULLPAK] CASE 221D STYLE 3 1 2 AYWW B10H150G AKA 3 MAXIMUM RATINGS A Y WW B10H150 G AKA Please See the Table on the Following Page = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 April, 2008 − Rev. 1 1 Publication Order Number: MBRF10H150CT/D MBRF10H150CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit VRRM VRWM VR 150 V IF(AV) 5 10 A IFSM 150 A Operating Junction Temperature (Note 1) TJ −20 to +150 °C Storage Temperature Tstg −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms > 400 > 8000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 142°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance − Junction−to−Case Symbol Value Unit RqJC 2.5 °C/W Typ Max Unit ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR 0.85 0.63 V 0.69 45 20 mA mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number MBRF10H150CTG Package Type Shipping† TO−220FP (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBRF10H150CTG 100 TJ = 100°C TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 TJ = 100°C TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−02 1.0E−01 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) TJ = 125°C 1.0E−03 TJ = 125°C 1.0E−02 TJ = 100°C 1.0E−04 TJ = 100°C 1.0E−03 1.0E−05 1.0E−04 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−05 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 10 9 8 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 1.0E−07 1.0E−06 0 10 20 30 40 50 60 70 80 90 100110 120130140150 0 10 20 30 40 50 60 70 80 90 100110 120130140150 dc 7 6 SQUARE WAVE 5 4 3 2 1 0 125 130 135 140 145 150 155 10 TJ = 150°C 9 8 7 6 5 SQUARE 4 3 dc 2 1 0 0 1 2 3 4 5 6 7 8 9 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 10 MBRF10H150CTG 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 0 50 100 150 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Case for MBRF10H150CTG http://onsemi.com 4 100 1000 MBRF10H150CTG PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC. 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