DMP2012SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SC-59 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SC-59 D Gate ESD protected Gate Protection Diode TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings S G Source @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State Pulsed Drain Current (Note 3) Thermal Characteristics Symbol VDSS VGSS ID IDM Unit V V A A Value 500 250 -65 to +150 Unit mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Value -20 ±12 -0.7 -2.8 Symbol Pd RθJA Tj, TSTG @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -10 ±10 V μA μA VGS = 0V, ID = 250mA VDS = -20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.5 RDS (ON) ⎯ -1.2 0.30 0.50 V Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time |Yfs| VSD ⎯ ⎯ ⎯ 0.23 0.37 1.5 -0.8 ⎯ -1.1 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -0.4A VGS = -2.5V, ID = -0.4A VDS = -10V, ID = 0.4A VGS = 0V, IS = -0.7A Ciss Coss Crss ⎯ ⎯ ⎯ 180 120 50 ⎯ ⎯ ⎯ pF pF pF VDS = -10V, VGS = 0V f = 1.0MHz tD(ON) tD(OFF) tr tf ⎯ ⎯ ⎯ ⎯ 5 55 20 70 ⎯ ⎯ ⎯ ⎯ ns ns ns ns VDD = -10V, ID = -0.4A, VGS = -5.0V, RGEN = 50Ω Notes: 1. 2. 3. 4. 5. Ω Test Condition Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMP2012SN Document number: DS30790 Rev. 3 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated DMP2012SN 3 3 -5V 2.5 -4.5V -3.5V -3V -4V 2 VDS = 10V -2.5V -ID, DRAIN CURRENT (A) NEW PRODUCT -ID, DRAIN CURRENT (A) 2.5 TA = 25°C 2 1.5 1.5 -2V 1 0.5 1 TJ = 25°C 0.5 VGS = -1.5V 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics TJ = 125°C 3 0 1 1.5 2 2.5 -VGS, Gate-Source Voltage(V) Fig. 2 Typical Transfer Characteristics 0.6 0.4 ID = 0.5A 0.2 ID = 1.0A VGS = -4.5V VGS = -10V 0.1 0 2 4 6 8 0 10 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 On-Resistance vs. Gate Voltage 0.5 1 1.5 2 2.5 -ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs. Drain Current 3 1.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) ON-RESISTANCE (Ω) 0.8 RDS(ON), STATIC DRAIN-SOURCE 3 TJ = 25°C RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 0.8 0 TJ = -55°C 0 0.6 ID = -0.7A -0.4A 0.4 VGS = -2.5V ID = -0.7A 0.2 VGS = -4.5V 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP2012SN Document number: DS30790 Rev. 3 - 2 2 of 4 www.diodes.com VDS = 10V ID = 1mA 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Voltage vs. Temperature November 2007 © Diodes Incorporated DMP2012SN 1,000 f = 1MHz VGS = 0V TA = 25°C 2.5 C, CAPACITANCE (pF) IDR, REVERSE DRAIN CURRENT (A) 2 1.5 1 0 100 Crss 10 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 0 Ordering Information 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 8 Typical Total Capacitance (Note 6) Part Number DMP2012SN-7 Notes: Ciss Coss 0.5 Case SC-59 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT 3 PS1 Date Code Key Year Code 2006 T 2007 U PS1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SC-59 Min Max 0.35 0.50 B 1.50 1.70 C 2.70 3.00 D 0.95 G 1.90 H 2.90 3.10 J 0.013 0.10 K 1.00 1.30 L 0.35 0.55 M 0.10 0.20 N 0.70 0.80 0° 8° α All Dimensions in mm Dim A TOP VIEW B C G H K J M N D DMP2012SN Document number: DS30790 Rev. 3 - 2 L 3 of 4 www.diodes.com November 2007 © Diodes Incorporated DMP2012SN Suggested Pad Layout Dimensions Value (in mm) Z 4.0 G 1.2 X 0.9 Y 1.4 C 2.6 E 0.95 Y NEW PRODUCT Z G C X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP2012SN Document number: DS30790 Rev. 3 - 2 4 of 4 www.diodes.com November 2007 © Diodes Incorporated