DIODES 2DC4617QLP

2DC4617QLP
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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NEW P RO DU CT
Features
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Complementary PNP Type Available (2DA1774QLP)
Ultra-Small Leadless Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
1
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Case: DFN1006-3
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0009 grams
Maximum Ratings
3
B
2
C
Mechanical Data
•
•
E
BOTTOM VIEW
TOP VIEW
(Internal Schematic)
DFN1006-3
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
50
50
5.0
100
200
Unit
V
V
V
mA
mA
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
50
50
5.0
Collector Cutoff Current
ICBO
⎯
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
IEBO
⎯
⎯
⎯
⎯
100
5
100
V
V
V
nA
μA
nA
IC = 50μA, IE = 0
IC = 1.0mA, IB = 0
IE = 50μA, IC = 0
VCB = 30V
VCB = 30V, TA = 150°C
VEB = 4.0V
hFE
VCE(SAT)
120
⎯
270
0.2
⎯
V
VCE = 6.0V, IC = 1.0mA
IC = 50mA, IB = 5.0mA
Cobo
⎯
3.5
pF
fT
100
⎯
MHz
VCB = 12V, f = 1.0MHz, IE = 0
VCE = 12V, IC = 2.0mA,
f = 100MHz
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
Test Condition
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Part mounted on FR-4 PCB with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
DS31439 Rev. 3 - 2
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2DC4617QLP
© Diodes Incorporated
300
100
IC, COLLECTOR CURRENT (mA)
PD , POWER DISSIPATION (mW)
200
150
100
50
RθJA = 500 °C/W
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
IB = 0.4mA
IB = 0.3mA
60
IB = 0.2mA
40
IB = 0.1mA
20
0
150
1
2
3
4
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
5
0.5
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
400
hFE, DC CURRENT GAIN
80
0
0
0
300
200
100
IC/IB = 10
0.4
0.3
0.2
TA = 150ºC
TA = 85ºC
0.1
TA = 25ºC
TA = -55ºC
0
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
vs. Collector Current
0
0.1
1,000
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.2
1.0
1.0
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
NEW PRODUCT
IB = 0.5mA
250
0.8
0.6
0.4
0.2
0.8
TA = -55°C
0.6
TA = 25°C
T A = 85°C
0.4
TA = 150°C
0.2
IC /IB = 10
0
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DS31439 Rev. 3 - 2
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0
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DC4617QLP
© Diodes Incorporated
Ordering Information
(Note 5)
Device
2DC4617QLP-7
5.
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DFN1006-3 Taping orientation
xx
8D = Product Type Marking Code
Dot Denotes Collector Side
8D
xx
NEW PRODUCT
Notes:
Packaging
DFN1006-3
Direction of feed
Package Outline Dimensions
A
A1
D
b1
E b2
e
L2
L3
L1
DFN1006-3
Dim Min
Max Typ
A
0.47
0.53 0.50
A1
0
0.05 0.03
b1
0.10
0.20 0.15
b2
0.45
0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20
0.30 0.25
L2
0.20
0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
Suggested Pad Layout
C
Dimensions
Z
G1
G2
X
X1
Y
C
X1
X
G2
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
G1
Y
Z
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31439 Rev. 3 - 2
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2DC4617QLP
© Diodes Incorporated