DST3906DJ NEW PRODUCT DUAL 40V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • VCEO = -40V IC = -200mA Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) Ultra Small Package Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) • • • SOT-963 Top View Device Schematic Ordering Information Device DST3906DJ-7 Notes: Packaging SOT-963 Shipping 10,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information T9 DST3906DJ Document number: DS32039 Rev. 2 - 2 T9 = Product Type Marking Code 1 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3906DJ @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Symbol VCBO VCEO VEBO IC Value -40 -40 -5.0 -200 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C 3. Device mounted on FR-4 PCB with minimum recommended pad layout. r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 370°C/W D = 0.9 D = 0.05 P(pk) D = 0.02 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 10 100 1,000 0.4 1,000 Single Pulse PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) NEW PRODUCT Maximum Ratings RθJA(t) = r(t) * RθJA RθJA = 370°C/W 100 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 10 1 0.3 Note 3 0.2 0.1 0 0.1 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DST3906DJ Document number: DS32039 Rev. 2 - 2 2 of 6 www.diodes.com 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature April 2010 © Diodes Incorporated DST3906DJ @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX ICBO IBL -40 -40 -5.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -50 -50 -50 V V V nA nA nA hFE 60 80 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.25 -0.40 V Base-Emitter Saturation Voltage VBE(SAT) -0.65 ⎯ -0.85 -0.95 V Cobo Cibo hie hre hfe hoe ⎯ ⎯ 2.0 0.1 100 3.0 4.5 10 12 10 400 60 pF pF kΩ -4 x 10 ⎯ μS Current Gain-Bandwidth Product fT 300 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 225 75 ns ns ns ns Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Notes: ⎯ Test Condition IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCB = -30V, IE = 0 VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 4. Short duration pulse test used to minimize self-heating effect. 0.20 400 IB = -2mA IB = -1.6mA 0.16 IB = -1.8mA VCE = 5V 350 TA = 150°C IB = -1.4mA hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) NEW PRODUCT Electrical Characteristics IB = -1.2mA 0.12 IB = -1mA IB = -0.8mA 0.08 IB = -0.6mA IB = -0.4mA 300 TA = 125°C 250 TA = 85°C 200 T A = 25°C 150 100 TA = -55°C 0.04 IB = -0.2mA 0 0 50 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DST3906DJ Document number: DS32039 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current April 2010 © Diodes Incorporated DST3906DJ 1 1 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 T A = 150°C 0.1 T A = 125°C TA = 85°C T A = 25°C TA = -55°C 1.2 Gain = 10 1.0 0.8 TA = -55°C T A = 25°C 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 T A = 125°C TA = 85°C T A = 25°C TA = -55°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 T A = 150°C 0.1 0.01 0.1 0.01 -IC, COLLECTOR CURRENT (A) NEW PRODUCT IC/IB = 10 1.2 Gain = 10 1.0 0.8 0.6 TA = -55°C T A = 25°C TA = 150°C 0.4 0.2 0.1 TA = 125°C TA = 85°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current TA = 25°C Single, Non-Repetitive Pulse 1 PW = 1ms DC 0.1 PW = 100µs PW = 100ms PW = 10ms 0.01 0.001 0.1 1 10 100 -VCE, COLLECTOR EMITTER CURRENT (V) Fig. 10 Safe Operation Area (PNP) DST3906DJ Document number: DS32039 Rev. 2 - 2 4 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3906DJ Package Outline Dimensions D e1 NEW PRODUCT L E E1 e b (6 places) c A A1 SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm Suggest Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DST3906DJ Document number: DS32039 Rev. 2 - 2 5 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3906DJ IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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