DSS9110Y 100V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary NPN Type Available (DSS8110Y) Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free “Green” Device (Note 2) ESD rating: 400V-MM, 8KV-HBM • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) C C C E C C B B E Top View Top View Pin Out Configuration Device Symbol Ordering Information (Note 3) Product DSS9110Y-7 Notes: Marking ZP5 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com ZP5 Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DSS9110Y Document number: DS31678 Rev. 2 - 2 Mar 3 YM Marking Information 2012 Z Apr 4 ZP5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2013 A May 5 Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D October 2010 © Diodes Incorporated DSS9110Y Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current – Continuous Symbol VCBO VCEO VEBO IC ICM IB Value -120 -100 -5 -1 -3 -0.3 Unit V V V A A A Symbol PD RθJA TJ, TSTG Value 625 200 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 0.8 10 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) Pw = 100µs 0.6 0.4 R θJA = 200°C/W 0.2 1 0.1 0.01 0.001 0.1 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 1 10 100 1,000 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 163°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 3 Transient Thermal Response DSS9110Y Document number: DS31678 Rev. 2 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated DSS9110Y Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min -120 -100 -5 Typ ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Collector Cutoff Current Emitter Cutoff Current ICES IEBO ⎯ ⎯ hFE 150 150 150 125 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 16 ⎯ 27 230 165 160 DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) VCE(sat) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Output Capacitance Current Gain-Bandwidth Product Delay Time Rise Time Storage Time Fall Time RCE(sat) VBE(sat) VBE(on) Cobo fT td tr ts tf Notes: Max ⎯ ⎯ ⎯ -100 -50 -100 -100 Unit V V V nA μA nA nA ⎯ ⎯ 450 ⎯ V -120 -180 -320 mV 320 -1.1 -1 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ mΩ V V pF MHz ns ns ns ns Test Condition IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -80V, IE = 0 VCB = -80V, IE = 0, TA = 150°C VCE = -80V, VBE = 0 VEB = -4V, IC = 0 VCE = -5V, IC = -1mA VCE = -5V, IC = -250mA VCE = -5V, IC = -500mA VCE = -5V, IC = -1A IC = -250mA, IB = -25mA IC = -500mA, IB = -50mA IC = -1A, IB = -100mA IC = -1A, IB = -100mA IC = -1A, IB = -100mA VCE = -5V, IC = -1A VCB = -10V, f = 1.0MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2.4 1,000 IB = 45mA IB = 36mA 1.6 IB = 31.5mA IB = 9mA 1.2 IB = 4.5mA 0.8 IB = 27mA IB = 22.5mA TA = 150°C 700 600 T A = 125°C 500 T A = 85°C 400 T A = 25°C 300 200 IB = 18mA 0.4 VCE = -10V 800 IB = 40.5mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 900 2.0 IB = 13.5mA T A = -55°C 100 0 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DSS9110Y Document number: DS31678 Rev. 2 - 2 3 of 6 www.diodes.com 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current October 2010 © Diodes Incorporated DSS9110Y 1 1 IC/IB = 20 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.1 T A = 150°C TA = 125°C T A = 85°C TA = 25°C T A = 150°C 0.1 TA = 125°C TA = 85°C TA = 25°C TA = -55°C TA = -55°C 0.01 0.0001 0.01 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 IC/IB = 50 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 1 T A = 150°C TA = 125°C 0.1 T A = 85°C TA = 25°C TA = -55°C 1 0.1 IC/IB = 50 IC/IB = 20 IC/IB = 10 0.01 0.001 0.01 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 9 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = -5V 1.0 0.8 TA = -55°C 0.6 T A = 25°C 0.4 TA = 85°C TA = 125°C 0.2 T A = 150°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 10 Typical Base-Emitter Turn-On Voltage vs. Collector Current DSS9110Y Document number: DS31678 Rev. 2 - 2 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Collector-Emitter Saturation Voltage vs. Collector Current 4 of 6 www.diodes.com 1.4 1.2 IC/IB = 10 1.0 0.8 T A = -55°C 0.6 T A = 25°C 0.4 TA = 85°C T A = 125°C 0.2 TA = 150°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 11 Typical Base-Emitter Saturation Voltage vs. Collector Current October 2010 © Diodes Incorporated DSS9110Y Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X DSS9110Y Document number: DS31678 Rev. 2 - 2 5 of 6 www.diodes.com October 2010 © Diodes Incorporated DSS9110Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DSS9110Y Document number: DS31678 Rev. 2 - 2 6 of 6 www.diodes.com October 2010 © Diodes Incorporated