2DA2018 ADVANCE INFORMATION 12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD rating: 400V-MM, 8KV-HBM • • • • Applications • • • Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) DC-DC converter Portable equipments Power management units C SOT-523 C B B E E Top View Top View Pin Configuration Device Symbol Ordering Information (Note 3) Product 2DA2018-7 Notes: Marking KTF Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information KTF Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 2DA2018 Document number: DS31823 Rev. 3 - 2 Mar 3 YM 2011 Y Apr 4 KTF = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2012 Z May 5 Jun 6 1 of 5 www.diodes.com 2013 A Jul 7 2014 B Aug 8 Sep 9 2015 C Oct O 2015 C Nov N Dec D October 2010 © Diodes Incorporated 2DA2018 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -15 -12 -6 -500 -1 Unit V V V mA A Symbol PD RθJA TJ, TSTG Value 150 833 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 160 P(pk), PEAK TRANSIENT POWER (W) 100 140 PD, POWER DISSIPATION (mW) 120 100 80 60 40 20 0 0 RθJA = 833°C/W Single Pulse 80 RθJA(t) = r(t) * RθJA RθJA = 470°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 60 40 20 0 1 100 1,000 0.0001 0.001 0.01 0.1 10 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 470°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1 /t2 D = Single Pulse 0.001 0.0001 2DA2018 Document number: DS31823 Rev. 3 - 2 0.001 t1 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 3 Transient Thermal Response 2 of 5 www.diodes.com 10 100 1,000 October 2010 © Diodes Incorporated 2DA2018 Electrical Characteristics @TA = 25°C unless otherwise specified Symbol BVCBO BVCEO BVEBO Min -15 -12 -6 Typ ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Emitter Cutoff Current DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) Output Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time IEBO hFE ⎯ 270 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.4 260 40 18 22 106 87 19 Notes: VCE(sat) Cobo fT ton td tr toff ts tf Max ⎯ ⎯ ⎯ -100 -50 -100 680 -250 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit V V V nA μA nA ⎯ mV pF MHz ns ns ns ns ns ns Test Condition IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -15V, IE = 0 VCB = -15V, IE = 0, TA = 150°C VEB = -6V, IC = 0 VCE = -2V, IC = -10mA IC = -200mA, IB = -10mA VCB = -10V, f = 1.0MHz VCE = -2V, IC = -10mA, f = 100MHz VCC = -6V IC = -200mA, IB1 = IB2 = -10mA 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 800 1.0 0.8 IB = 5mA 700 IB = 4mA 600 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 1.2 IB = 3mA 0.6 IB = 2mA 0.4 IB = 1mA TA = 125°C 500 TA = 85°C 400 TA = 25°C 300 200 TA = -55°C 0.2 100 0 0 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.1 IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) ADVANCE INFORMATION Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage TA = 150°C 0.01 TA = 125°C T A = 85°C TA = 25°C TA = -55°C 0.001 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 2DA2018 Document number: DS31823 Rev. 3 - 2 3 of 5 www.diodes.com 1.0 VCE = 2V 0.8 T A = -55°C 0.6 T A = 25°C 0.4 TA = 85°C T A = 125°C 0.2 TA = 150°C 0 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current October 2010 © Diodes Incorporated VCE = 5V 0.8 TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C TA = 125°C 0.2 T A = 150°C 0 0.01 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1.2 IC/IB = 20 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 125°C 0.2 TA = 150°C 0 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 100 1.2 f = 1MHz IC/IB = 10 1.0 Cibo CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) ADVANCE INFORMATION 2DA2018 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 Cobo 10 TA = 125°C TA = 150°C 0.2 0 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Base-Emitter Saturation Voltage vs. Collector Current 1 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 11 Typical Capacitance Characteristics Package Outline Dimensions A SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm B C G H K J 2DA2018 Document number: DS31823 Rev. 3 - 2 M N D L 4 of 5 www.diodes.com October 2010 © Diodes Incorporated 2DA2018 ADVANCE INFORMATION Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com 2DA2018 Document number: DS31823 Rev. 3 - 2 5 of 5 www.diodes.com October 2010 © Diodes Incorporated