DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(ON) max ID max TA = 25°C 75mΩ @ VGS = -4.5V -3.3A 140mΩ @ VGS = -1.8V -2.4A • -20V • • • • • • • Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Low On-Resistance • 75 mΩ @ VGS = -4.5V • 96 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) • • • • Drain SOT23 D Gate Source Top View S G Top View Internal Schematic Ordering Information (Note 3) Part Number DMP2160U-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. DMF Date Code Key Year Code Month Code 2008 V Jan 1 DMP2160U Document number: DS31586 Rev. 6 - 2 2009 W Feb 2 Mar 3 YM Marking Information DMF = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 1 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D August 2011 © Diodes Incorporated DMP2160U Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = -4.5V Units V V IDM Value -20 ±12 -3.3 -2.6 -13 Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Units W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current A A Thermal Characteristics Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±100 ±800 V μA IGSS nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.4 -0.6 -0.9 V Static Drain-Source On-Resistance RDS (ON) ⎯ 60 73 92 75 96 140 mΩ gFS VSD ⎯ ⎯ 7 ⎯ ⎯ -1.0 S V Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 627 64 53 44.9 6.5 0.9 1.5 12.5 10.3 46.5 22.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF Ω nC nC nC ns ns ns ns Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VGS = 0V, ID = -250μA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -1.5A VGS = -2.5V, ID = -1.2A VGS = -1.8V, ID = -1.2A VDS = -10V, ID = -1.5A VGS = 0V, IS = -1.0A VDS = -10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -3A VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1.0Ω, ID = -1A 4. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. DMP2160U Document number: DS31586 Rev. 6 - 2 2 of 5 www.diodes.com August 2011 © Diodes Incorporated DMP2160U 10 10 VDS = -5V VGS = 3.0V VGS = 3.0V 8 -ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 3.0V VGS = 2.5V VGS = 2.0V 6 4 VGS = 1.5V 2 6 4 TA = 150°C 2 TA = 125°C TA = 85°C TA = 25°C 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 TA = -55°C 0 0.5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 1,200 1.6 1,000 1.4 VGS = -2.5V ID = -2A 1.2 C, CAPACITANCE (pF) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) f = 1MHz VGS = -4.5V ID = -4.5A 1.0 0.8 800 600 Ciss 400 200 0.6 -50 Coss Crss 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance Variation with Temperature 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Capacitance 20 10 1 0.9 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS = 0V 0.8 0.7 ID = 1mA 0.6 0.5 ID = 250µA 0.4 8 6 4 T A = 25°C 2 0.3 0.2 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMP2160U Document number: DS31586 Rev. 6 - 2 3 of 5 www.diodes.com 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 6 Diode Forward Voltage vs. Current 1.6 August 2011 © Diodes Incorporated DMP2160U r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 338°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 7 Transient Thermal Response Package Outline Dimensions SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm A B C H K M K1 D F J L G Suggested Pad Layout Y Z C X DMP2160U Document number: DS31586 Rev. 6 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com August 2011 © Diodes Incorporated DMP2160U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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