DMN4800LSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • • • • • • • ID max RDS(on) TA = 25°C 14mΩ @ VGS = 10V 8.0A 20mΩ @ VGS = 4.5V 6.7A NEW PRODUCT 30V 14mΩ @ VGS = 10V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) • • • DC-DC Converters Power management functions • SO-8 S D S D S D G D Top View Top View Internal Schematic Ordering Information (Note 3) Part Number DMN4800LSSL-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View 8 5 Logo N4800LS Part no. YY WW Week: 01 ~ 53 Year: “09” = 2009 1 DMN4800LSSL Document number: DS35016 Rev. 3 - 2 4 1 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN4800LSSL Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) VGS = 10V NEW PRODUCT Drain Current (Note 4) VGS = 10V Symbol VDSS VGSS Steady State Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C Value 30 ±20 8.0 6.4 ID IDM 6.7 5.3 50 Symbol PD RθJA TJ, TSTG Value 1.46 86 -55 to +150 ID Pulsed Drain Current (Note 5) Units V V A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Unit W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 0.8 RDS (ON) ⎯ 1.6 14 20 V Static Drain-Source On-Resistance gfs VSD ⎯ ⎯ 1.2 11 14 8 0.72 ⎯ 0.94 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 8A VGS = 4.5V, ID = 7A VDS = 10V, ID = 8A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 798 128 122 1.37 8.7 1.7 2.4 5.03 4.50 26.33 8.55 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Forward Transconductance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: mΩ Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 5V, VDS = 15V, ID = 9A ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6.0Ω, ID = 1A 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. DMN4800LSSL Document number: DS35016 Rev. 3 - 2 2 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN4800LSSL 30 30 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 3.0V 15 10 VGS = 2.5V 20 15 10 TA = 150°C TA = 125°C 5 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0 2 0.07 0.06 0.05 0.04 0.03 0.02 V GS = 4.5V 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.2 VGS = 4.5V ID = 10A 0.8 VGS = 10V ID = 11.6A TA = 150°C TA = 125°C 0.02 TA = 85°C TA = 25°C 0.01 TA = -55°C 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 0.03 0.025 0.02 0.015 VGS = 4.5V ID = 10A 0.01 VGS = 10V ID = 11.6A 0.005 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature Document number: DS35016 Rev. 3 - 2 VGS = 4.5V 0 RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω) 1.4 DMN4800LSSL 3 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 0.6 -50 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.03 30 1.8 1.0 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0 TA = 85°C TA = 25°C TA = -55°C VGS = 2.0V 0 RDS(ON) , DRAIN-SOURCE ON-RESISTANCE (Ω) VDS = 5V 25 VGS = 4.5V 5 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 25 3 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN4800LSSL TA = 25°C IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 ID = 1mA 1.2 ID = 250µA 0.8 0.4 12 8 0 0.4 10,000 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10 VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 16 4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 Ciss Coss 100 Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 8 6 ID = 11.6A ID = 9A 4 2 0 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Fig. 10 Total Gate Charge 10,000 T A = 150°C IDSS, LEAKAGE CURRENT (nA) NEW PRODUCT 1.6 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C T A = -55°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage DMN4800LSSL Document number: DS35016 Rev. 3 - 2 4 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN4800LSSL r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 85°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 D = Single Pulse 0.001 0.0001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 100 1,000 Package Outline Dimensions 0.254 NEW PRODUCT 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN4800LSSL Document number: DS35016 Rev. 3 - 2 5 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN4800LSSL IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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