VISHAY K3012

K3010P(G) Series
Vishay Telefunken
Optocoupler with Phototriac Output
Description
The K3010P(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The
elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced
isolation):
14827
D For appl. class I – IV at mains voltage ≤ 300 V
D For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Monitors, air conditioners, line switches, solid
state relays, microwaves.
~
~
6
5
4
1
2
3
These couplers perform safety functions according
to the following equipment standards:
D VDE 0884
Optocoupler for electrical safety requirements
95 10812
VDE Standards
A (+) C (–) nc
Note: Pin 5 must not be connected
D IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 VRMS)
D VDE 0804
Telecommunication apparatus and data
processing
D IEC 65
Safety for mains-operated electronic and related
household apparatus
Order Instruction
Ordering Code
CTR Ranking
K3010P/ K3010PG1)
< 15 mA
1)
K3011P/ K3011PG
< 10 mA
K3012P/ K3012PG1)
< 5 mA
1) G = Leadform 10.16 mm; G is not marked on the body
Document Number 83504
Rev. A4, 13–Sep–99
Remarks
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K3010P(G) Series
Vishay Telefunken
Features
D Rated recurring peak voltage (repetitive)
Approvals:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 12398
VIORM = 600 VRMS
D Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation ≥ 0.75 mm
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
General features:
D VDE 0884, Certificate number 94778
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV
D Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D Isolation materials according to UL 94-VO
D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
D Climatic classification 55/100/21 (IEC 68 part 1)
D Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D IFT offered in 3 groups
D Coupling System C
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp ≤ 10 ms
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
5
80
3
100
100
Unit
V
mA
A
mW
°C
Symbol
VDRM
ITRMS
ITMS
PV
Tj
Value
250
100
1.5
300
100
Unit
V
mA
A
mW
°C
Symbol
VIO 1)
Ptot
Tamb
Tstg
Tsd
Value
3.75
350
–40 to +85
–55 to +100
260
Unit
kV
mW
°C
°C
°C
Output (Detector)
Parameter
Test Conditions
Off state output terminal voltage
On state RMS current
Peak surge current, non-repetitive tp ≤ 10 ms
Power dissipation
Tamb ≤ 25°C
Junction temperature
Coupler
Parameter
Test Conditions
Isolation test voltage (RMS)
t = 1 min
Total power dissipation
Tamb ≤ 25°C
Ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case, t ≤ 10 s
1) Related to standard climate 23/50 DIN 50014
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Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
IF = 50 mA
VR = 0, f = 1 MHz
Symbol
VF
Cj
Min.
Typ.
1.25
50
Max.
1.6
Unit
V
pF
Test Conditions
IDRM = 100 nA
Symbol
VDRM 1)
Min.
250
Typ.
Max.
Unit
V
ITM = 100 mA
IFT = 0, IFT = 30 mA
VTM
(dv/dt)cr
(dv/dt)crq
1.5
10
0.2
3
V
V/ms
V/ms
Max.
15
10
5
Unit
mA
mA
mA
mA
Output (Detector)
Parameter
Forward peak off-state
voltage (repetitive)
Peak on-state voltage
Critical rate of rise of
off-state voltage
1)
0.1
Test voltage must be applied within dv/dt ratings
Coupler
Parameter
Emitting
g diode trigger
gg
current
Test Conditions
Type
VS = 3 V, RL = 150 W K3010P(G)
K3011P(G)
K3012P(G)
Holding current
IF = 10 mA, VS ≥ 3 V
Note: IFT is defined as a minimum trigger current
Symbol
IFT
IFT
IFT
IH
RS
V~
IFT
RL
Min.
Typ.
8
5
2
100
Test condition:
dv/dtcr
VS = 2/3 VDRM
(Sine wave)
RL = 33 kΩ
dv/dtcrq
Veff = 30 V
(Sine wave)
RL = 2 kΩ
95 10813
Figure 1. Test circuit for dv/dtcr and dv/dtcrp
Document Number 83504
Rev. A4, 13–Sep–99
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K3010P(G) Series
Vishay Telefunken
IF
yI
FT
95 10814
IF = 0
dv / dtcrq
dv / dtcr
dv/dtcr
Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the
off-state to the on-state
dv/dtcrq Highest value of the “rate of rise of communicating voltage” which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from IFT to zero
Figure 2.
270 Ω
+5 V
M
0.1 µF
VAC ~
TTL
Galvanical separation
95 10815
Figure 3. Motor control circuit
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Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 4
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
Isi
Value
130
Unit
mA
Test Conditions
Tamb ≤ 25°C
Symbol
Psi
Value
600
Unit
mW
Test Conditions
Symbol
VIOTM
Tsi
Value
6
150
Unit
kV
°C
Output (Detector)
Parameters
Power dissipation
Coupler
Parameters
Rated impulse voltage
Safety temperature
Insulation Rated Parameters (according to VDE 0884)
Parameter
Partial discharge
g test voltage
g –
Routine test
Test Conditions
100%, ttest = 1 s
Partial discharge test voltage –
Lot test (sample test)
Insulation resistance
tTr = 60 s, ttest = 10 s,
(see figure 5)
VIO = 500 V
VIO = 500 V,
Tamb = 100°C
VIO = 500 V,
Tamb = 150°C
Symbol
Vpd
VIOTM
Vpd
Min.
1.6
6
1.3
Typ.
Max.
Unit
kV
kV
kV
RIO
RIO
1012
1011
W
W
RIO
109
W
(construction test only)
VIOTM
675
600
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
Psi (mW)
525
450
VPd
375
VIOWM
VIORM
300
225
Isi (mA)
150
75
0
0
0
25
50
75
100
125
Tamb ( °C )
95 10925
Figure 4. Derating diagram
Document Number 83504
Rev. A4, 13–Sep–99
150
13930
t3 ttest t4
t1
tTr = 60 s
t2
tstres
t
Figure 5. Test pulse diagram for sample test according to
DIN VDE 0884
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K3010P(G) Series
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
1.5
VTMrel – Relative On–State Voltage
P tot – Total Power Dissipation ( mW )
400
Coupled device
300
Phototransistor
200
IR-diode
100
0
0
20
40
60
80
Figure 6. Total Power Dissipation vs.
Ambient Temperature
1.1
1.0
0.9
0.8
0.7
0.6
100
100.0
10.0
1.0
VDR=100V
IF=0
10
0.1
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
20
40
50
60
70
80
90
100
Figure 10. Off - State Current vs. Ambient Temperature
1.5
250
1.4
1.2
30
Tamb – Ambient Temperature ( °C )
96 11924
200
VS=3V
RL=150W
1.1
1.0
0.9
0.8
0.7
ITM – On–State Current ( mA )
I FTrel – Relative Threshold Forward Current
Figure 7. Forward Current vs. Forward Voltage
1.3
Tamb – Ambient Temperature ( °C )
Figure 9. Relative On - State vs. Ambient Temperature
I DRM – Off–State Current ( nA )
I F – Forward Current ( mA )
1.2
96 11923
1000.0
96 11862
IF IFT
IT=100mA
1.3
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
100
Tamb – Ambient Temperature ( °C )
96 11701
w
1.4
150
100
IFT=15mA
50
0
–50
–100
–150
0.6
–200
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
–250
–2.5 –2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0 2.5
96 11922
Tamb – Ambient Temperature ( °C )
Figure 8. Relative Threshold Forward Current vs.
Ambient Temperature
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96 11925
VTM – On–State Voltage ( V )
Figure 11. On - State Current vs. Ambient Temperature
Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Type
Date
Code
(YM)
XXXXXX
918 A TK 63
0884
V
D E
Production
Location
Safety
Logo
15090
Coupling
System
Indicator
Company
Logo
Figure 12. Marking example
Dimensions of K301.PG in mm
14771
Document Number 83504
Rev. A4, 13–Sep–99
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K3010P(G) Series
Vishay Telefunken
Dimensions of K301.P in mm
14770
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Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83504
Rev. A4, 13–Sep–99
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