K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Non-Zero Crossing, 250 VDRM FEATURES SMD • Isolation materials according to UL 94 V-0 A 1 6 MT2 C 2 5 NC • IFT of 5 mA, 10 mA, and 15 mA 4 MT1 NC 3 DIP • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak • Isolation test voltage, 5300 VRMS, t = 1 s • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS i179041-2 Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): DESCRIPTION The K3010P, K3010PG series consists of a photo-transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package • for appl. class I to IV at mains voltage ≤ 300 V • for appl. class I to IV at mains voltage ≤ 600 V according to DIN EN60747-5-5 (VDE0884), suitable for: AGENCY APPROVALS - Monitors • UL1577, file no. E52744 system code H, double protection - Air conditioners • BSI: BS EN60065:2002 and IEC 60065:2001, certificate number 7955. An BS EN60950-1:2006 certificate number 7956 - Line switches - Solid state relay - Microwave • DIN EN 60747-5-5 • CQC: GB8898-2001 ORDERING INFORMATION K 3 0 1 PART NUMBER 0 P # TRIGGER CURRENT BIN X 0 # # PACKAGE OPTION DIP-6 G leadform 7.62 mm 10.16 mm T TAPE AND REEL Option 7 > 0.7 mm AGENCY CERTIFIED/PACKAGE VDE, cUL, BSI DIP-6 DIP-6, 400 mil SMD-6, option 7 TRIGGER CURRENT, IFT 5 mA 10 mA 15 mA K3012P K3011P K3010P K3012PG K3011PG K3010PG K3012P-X007T - K3010P-X007T Note • G = leadform 10.16 mm; G is not marked on the body. Document Number: 83504 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 01-Jun-12 K3010P, K3010PG Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 80 mA tp ≤ 10 μs Forward surge current IFSM 3 A Pdiss 100 mW Tj 100 °C Off state output terminal voltage VDRM 250 V On state RMS current ITRM 100 mA Power dissipation Junction temperature OUTPUT Peak surge current, non-repetitive tp ≤ 10 ms Power dissipation Junction temperature ITMS 1.5 A Pdiss 300 mW Tj 100 °C COUPLER Isolation test voltage (RMS) VISO 5300 VRMS Total power dissipation Ptot 350 mW Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C Soldering temperature (1) t=1s 2 mm from case, t ≤ 10 s Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices (DIP) “Assembly Instructions” (www.vishay.com/doc?80054) ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 Forward peak off-state voltage (repetitive) IRDM = 100 nA VDRM (1) Peak on-state voltage ITM = 100 mA Junction capacitance V pF OUTPUT Critical rate of rise of off-state voltage IFT = 0, IFT = 30 mA 250 V VTM 1.5 dV/dtcr 10 V/μs 0.2 V/μs dV/dtcrq 0.1 3 V COUPLER (2) Collector emitter trigger current Holding current VS = 3 V, RL = 150 Ω IF = 10 mA, VS ≥ 3 V K3010P IFT 8 15 mA K3010PG IFT 8 15 mA K3011P IFT 5 10 mA K3011PG IFT 5 10 mA K3012P IFT 2 5 mA K3012PG IFT 2 5 mA IH 100 μA Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Test voltage must be applied within dV/dt ratings. (2) I FT is defined as a minimum trigger current. Document Number: 83504 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 01-Jun-12 K3010P, K3010PG Series www.vishay.com Vishay Semiconductors RS Test condition: dV/dt cr VS = 2/3 VDRM (sine wave) R L = 33 kΩ V~ I FT dV/dt crq Veff. = 30 V RL (sine wave) R L = 2 kΩ 95 10813 Fig. 1 - Test Circuit for dV/dtcr and dV/dtcrq I F ≥ I FT IF = 0 dV/dt crq dV/dt cr dV/dt cr Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the off state to the on state Highest value of the “rate of rise of communicating voltage” which does not switch on the device again, after the voltage has decreased to zero and the trigger current is switched from I FT to zero dV/dt crq 95 10814 Fig. 2 270 +5V M 0.1 µF VAC ~ TT L Galvanic seperation 95 10815 Fig. 3 - Motor Control Circuit Document Number: 83504 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 01-Jun-12 K3010P, K3010PG Series www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/100/21 Pollution degree (DIN VDE 0109) 2 Comparative tracking index CTI 175 Peak transient overvoltage VIOTM 8000 Vpeak Peak working insulation voltage VIORM 890 Vpeak 1669 Vpeak Partial discharge test voltage (method a, Vpd = VIORM x 1.875) Vpd Isolation resistance at Tamb = 100 °C, VDC = 500 V RIO 1011 Isolation resistance at Tamb = 25 °C, VDC = 500 V RIO 1012 Safety rating - power PSO 265 mW Safety rating - input current ISI 130 mA Safety rating - temperature TSI 150 Clearance distance (Standard DIP-6) Ω Ω °C 7 mm Creepage distance (Standard DIP-6) 7 mm Clearance distance (400 mil DIP-6) 8 mm Creepage distance (400 mil DIP-6) 8 mm Note • According to DIN EN60747-5-5 (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 300 Max. Safety Ratings Psi (mW) t1, t2 t3 , t4 ttest tstres 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM Isi (mA) 100 50 0 0 0 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) Fig. 4 - Safety Parameter Derating Diagram 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 5 - Test Pulse Diagram for Sample Test according to DIN EN60747-5-5/DIN EN60747-; IEC 60747 Document Number: 83504 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 01-Jun-12 K3010P, K3010PG Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.5 VTMrel - Relative On-State Voltage Ptot - Total Power Dissipation (mW) 400 Coupled device 300 Phototransistor 200 IR-diode 100 0 0 20 40 60 80 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 1.1 1.0 0.9 0.8 0.7 0.6 100 I DRM - Off-State Current (nA) IF - Forward Current (mA) 1.2 Fig. 9 - Relative On-State vs. Ambient Temperature 1000 100 10 1 V DR = 100 V IF = 0 10 1 0.1 0 0.4 0.8 1.2 1.6 2.0 20 VF - Forward Voltage (V) 96 11862 Fig. 7 - Forward Current vs. Forward Voltage 96 11924 250 1.5 200 1.4 1.3 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 10 - Off-State Current vs. Ambient Temperature VS = 3 V R L = 150 Ω 1.2 1.1 1.0 0.9 0.8 0.7 I TM - On-State Current (mA) I FTrel - Relative Threshold Forward Current IF = I FT I T = 100 mA 1.3 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (°C) 96 11923 100 Tamb - Ambient Temperature (°C) 9611701 1.4 150 100 I FT = 15 mA 50 0 - 50 - 100 - 150 0.6 - 200 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 - 250 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 2.0 2.5 96 11922 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Threshold Forward Current vs. Ambient Temperature 96 11925 V TM - On-State Voltage (V) Fig. 11 - Collector Current vs. Forward Current Document Number: 83504 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 01-Jun-12 K3010P, K3010PG Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS millimeters 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 ISO method A 8.6 ± 0.1 7.62 typ. 1.2 ± 0.1 1 min. 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.5 ± 0.05 3° to 9° 0.25 typ. 7.62 to 8.81 i178004 2.54 typ. Option 7 G Series 10.36 9.96 7.62 typ. 7.8 7.4 0.7 min. 4.3 ± 0.3 8 min. 0.6 min. 10.3 max. 0.35 0.25 18450-12 10.16 10.92 0.76 2.54 R 0.25 1.78 8 min. 11.05 1.52 PACKAGE MARKING (example) K3010P V YWW H 68 Notes • The “G” of the 400 mil G leadform type is not marked on the body. • The VDE logo is only marked on option1 parts. Document Number: 83504 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 01-Jun-12 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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