MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Qualified to AEC-Q101 Standards for High Reliability Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) A C2 SOT-363 B1 E1 B C E2 B2 C1 H Mechanical Data • • • • • • • • • K Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: K2X – See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate) Maximum Ratings M J D C2 B1 E2 B2 L E1 Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm C1 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit VCBO 60 V VCEO 40 V Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient VEBO 6.0 V (Note 1) IC 600 mA (Note 1, 2) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C (Note 1) Operating and Storage Temperature Range Notes: F Dim 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30111 Rev. 13 - 2 1 of 4 www.diodes.com MMDT4401 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0 ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb ⎯ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 40 500 ⎯ Output Admittance hoe 1.0 30 μS fT 250 ⎯ MHz Delay Time td ⎯ 15 ns Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns Collector Cutoff Current Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 6) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: 6. VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Short duration pulse test used to minimize self-heating effect. 1,000 300 Note 1 250 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA 200 150 100 TA = 125°C 100 TA = -25°C TA = +25°C 10 50 VCE = 1.0V 0 1 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 DS30111 Rev. 13 - 2 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.1 2 of 4 www.diodes.com MMDT4401 © Diodes Incorporated 30 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) f = 1MHz CAPACITANCE (pF) 20 10 5.0 Cobo 1.0 0.1 1.0 10 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 1 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 0.01 100 1.0 IC IB = 10 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.6 50 0.5 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = -50°C 0 1.8 1 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30111 Rev. 13 - 2 3 of 4 www.diodes.com MMDT4401 © Diodes Incorporated Ordering Information Notes: 7. (Note 7) Device Packaging Shipping MMDT4401-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2X = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2X YM K2X YM Date Code Key Year Code 1998 J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30111 Rev. 13 - 2 4 of 4 www.diodes.com MMDT4401 © Diodes Incorporated