DIODES MMBT4403T-7-F

MMBT4403T
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
A
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT4401T)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
SOT-523
C
TOP VIEW
B
E
Mechanical Data
•
•
•
•
•
•
•
•
•
B C
G
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Information: 2T, See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.002 grams (approximate)
H
K
N
J
M
L
D
C
E
B
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
⎯
⎯
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
α
0°
8°
⎯
All Dimensions in mm
Maximum Ratings
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current – Continuous
(Note 1)
IC
-600
mA
Power Dissipation
(Note 1)
Pd
150
mW
Thermal Resistance, Junction to Ambient
(Note 1)
RθJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30273 Rev. 8 - 2
1 of 4
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MMBT4403T
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -100μA, IC = 0
ICEX
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
IBL
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
hFE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.40
-0.75
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
⎯
-0.95
-1.30
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Output Capacitance
Ccb
⎯
8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
kΩ
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
60
500
⎯
Output Admittance
hoe
1.0
100
μS
fT
200
⎯
MHz
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 5)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
-4
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Notes:
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
5. Short duration pulse test used to minimize self-heating effect.
200
40
30
Note 1
150
20
CAPACITANCE (pF)
Pd, POWER DISSIPATION (mW)
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
100
Cibo
10
5.0
50
Cobo
0
0
1.0
-0.1
80
40
120
160
200
TA, AMBIENT TEMPERATURE (ºC)
Fig. 1 Power Derating Curve, Total Package
DS30273 Rev. 8 - 2
2 of 4
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-1.0
-10
REVERSE VOLTS (V)
Fig. 2 Capacitances (Typical)
-30
MMBT4403T
© Diodes Incorporated
0.5
1.4
IC = 10mA
IC = 1mA
1.2
IC = 100mA I = 300mA
C
IC = 30mA
1.0
0.8
0.6
0.4
0.2
0
0.001
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
T A = 50°C
0
1
0.1
10
100
IB BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
0.01
1.0
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage
vs. Collector Current
1,000
VCE = 5V
VCE = 5V
0.9
TA = 150°C
0.8
hFE, DC CURRENT GAIN
VBE(ON), BASE EMITTER VOLTAGE (V)
= 10
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
VCE COLLECTOR-EMITTER VOLTAGE (V)
1.6
TA = -50°C
0.7
T A = 25°C
0.6
0.5
TA = 150°C
0.4
TA = 25°C
100
TA = -50°C
10
0.3
0.2
1
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Base-Emitter Voltage vs. Collector Current
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 DC Current Gain vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
DS30273 Rev. 8 - 2
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MMBT4403T
© Diodes Incorporated
Ordering Information (Note 6)
Packaging
SOT-523
Device
MMBT4403T-7-F
Notes:
Shipping
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2T = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2TYM
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30273 Rev. 8 - 2
4 of 4
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MMBT4403T
© Diodes Incorporated