DMP3056LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • Low RDS(ON): • 45mΩ @VGS = -10V • 65mΩ @VGS = -4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) • • • • • • Case: SOT-26 Case Material – Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See page 4 Weight: 0.008 grams (approximate) SOT-26 TOP VIEW Maximum Ratings D D S D D G TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous (VGS = -10V) Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Drain Current (Note 2) Unit V V IDM Value -30 ±20 -5 -4.2 -13 Symbol PD RθJA TJ, TSTG Value 1.25 100 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range Notes: 1. Device mounted on 1"x1", FR-4 PC board on 0.1in.2 pads on 2 oz. Copper pads and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMP3056LDM Document number: DS31449 Rev. 8 - 2 1 of 6 www.diodes.com September 2010 © Diodes Incorporated DMP3056LDM Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Symbol Min Typ Max Unit BVDSS IDSS -30 ⎯ ⎯ ⎯ V μA IGSS ⎯ ⎯ VGS(th) -1.0 RDS (ON) ⎯ ⎯ -1 ±100 ±800 -2.1 45 65 Gate-Body Leakage Current Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) DYNAMIC PARAMETERS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance gFS VSD ⎯ ⎯ ⎯ ⎯ ⎯ 8 ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ Gate Resistance RG Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) nA V mΩ Test Condition VGS = 0V, ID = -250μA VGS = 0V, VDS = -30V VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V VGS = VDS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4.2A VDS = -10V, ID = -4.3A VGS = 0V, IS = -1.7A ⎯ -1.2 S V 722 114 92 ⎯ ⎯ ⎯ pF pF pF VGS = 0V, VDS = -25V, f = 1.0MHz ⎯ 3.3 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz QG ⎯ 10.1 ⎯ nC VDS = -15V, VGS = -4.5V, ID = -6A QG QGS QGD Rg td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 21.1 2.8 3.2 13.15 6.4 5.3 26.5 14.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC VDS = -15V, VGS = -10V, ID = -6A Ω VDS = 0V, VGS = 0V, f = 1MHz ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 5. Test pulse width t = 300μs. 6. Guaranteed by design. Not subject to production testing. 10 12 11 9 VGS = -10V 9 VGS = -4.5V 8 7 6 5 4 VGS = -3.0V 3 VGS = -1.5V VGS = -1.0V 2 1 VDS = 5V Pulsed 8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 10 7 6 5 4 TA = 150°C TA = 125°C 3 TA = 85°C 2 VGS = -2.5V TA = -55°C 1 0 TA = 25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMP3056LDM Document number: DS31449 Rev. 8 - 2 5 2 of 6 www.diodes.com 1 1.5 2 2.5 3 3.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4 September 2010 © Diodes Incorporated DMP3056LDM 0.1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 VGS = -4.5V VGS = -10V 1 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 0.02 VGS = -10V ID = -4.3A 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Static Drain-Source On-Resistance vs. Ambient Temperature 10,000 3 2.8 f = 1MHz ID = -250µA 2.6 C, CAPACITANCE (pF) -VTH, GATE THRESHOLD VOLTAGE (V) VGS = -4.5V ID = -3.7A 0.03 0 -50 0.01 0.1 2.4 2.2 2 1.8 1.6 1,000 Ciss Coss 100 Crss 1.4 1.2 10 1 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 10 -IS, SOURCE CURRENT (A) 0.04 1 0.1 TA = 150°C TA = 125°C 0.01 TA = 85°C T A = 25°C 0.001 TA = -55°C 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMP3056LDM Document number: DS31449 Rev. 8 - 2 3 of 6 www.diodes.com 1.5 1.3 1.1 VGS = -10V ID = -10A 0.9 VGS = -4.5V ID = -5A 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature September 2010 © Diodes Incorporated DMP3056LDM 10 R DS(on) Limited T J(MAX) = 150°C T A = 25°C Single Pulse VGS, GATE-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) 100 10 PW = 10µs DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs 0.01 8 VDS = -15V ID = 6A 6 4 2 0 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Safe Operation Area 100 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 25 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 RθJA(t) = r(t) * RθJA RθJA = 96°C/W D = 0.05 D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 10 100 1,000 Ordering Information (Note 7) Part Number DMP3056LDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DMA Date Code Key Year Code Month Code 2008 V Jan 1 DMP3056LDM Document number: DS31449 Rev. 8 - 2 2009 W Feb 2 Mar 3 YM Marking Information 2010 X Apr 4 DMA = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D September 2010 © Diodes Incorporated DMP3056LDM Package Outline Dimensions A B C H K M J L D SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DMP3056LDM Document number: DS31449 Rev. 8 - 2 5 of 6 www.diodes.com September 2010 © Diodes Incorporated DMP3056LDM IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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