DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS(ON): • 40 mΩ @VGS = -4.5V • 70 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SC-59 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See page 4 Weight: 0.008 grams (approximate) • • • • SC-59 Drain D Gate Source TOP VIEW Maximum Ratings Internal Schematic G S Pin Configuration @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Unit V V IDM IS Value -20 ±12 -4.6 -3.7 -18 2.0 Symbol PD RθJA TJ, TSTG Value 1.25 100 -55 to +150 Unit W °C/W °C ID A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMP2066LSN Document number: DS31467 Rev. 3 - 2 1 of 4 www.diodes.com August 2008 © Diodes Incorporated DMP2066LSN @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 5) Symbol Min Typ Max Unit BVDSS IDSS IGSS VGS(th) ID (ON) -20 ⎯ ⎯ -0.6 -15 V μA nA V A RDS (ON) ⎯ ⎯ -1 ±100 -1.2 ⎯ 40 70 Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) Maximum Body-Diode Continuous Current (Note 1) DYNAMIC PARAMETERS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance gFS VSD IS ⎯ -0.5 ⎯ ⎯ ⎯ -0.96 ⎯ 29 55 9 -0.72 ⎯ Ciss Coss Crss Gate Resistance TJ = 25°C Static Drain-Source On-Resistance (Note 5) SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: mΩ Test Condition ID = -250μA, VGS = 0V VDS = -20V, VGS = 0V VDS = 0V, VGS = ±12V VDS = VGS, ID = -250μA VGS = -4.5V, VDS = -5V VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.8A VDS = -10V, ID = -4.5A IS = -2.1A, VGS = 0V ⎯ ⎯ -1.4 1.7 S V A ⎯ ⎯ ⎯ 820 200 160 ⎯ ⎯ ⎯ pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz RG ⎯ 2.5 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz QG QGS QGD td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10.1 1.5 4.3 4.4 9.9 28.0 23.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC VDS = -10V, VGS = -4.5V, ID = -4.5A ns VDS = -10V, VGS = -4.5V, ID = -1A, RG = 6.0Ω ⎯ 5. Test pulse width t = 300μs. 6. Guaranteed by design. Not subject to production testing. 30 20 VGS = 10V VGS = 4.5V VDS = 5.0V 16 ID , DRAIN CURRENT (A) 24 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 3.0V 18 12 12 VGS = 2.5V 6 8 4 TA = 150°C VGS = 2.0V TA = 125°C VGS = 1.5V 0 TA = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMP2066LSN Document number: DS31467 Rev. 3 - 2 5 2 of 4 www.diodes.com T A = 85°C TA = 25°C 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 August 2008 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 0 6 12 18 24 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.08 VGS = 4.5V 0.06 TA = 150°C TA = 125°C 0.04 TA = 85°C TA = 25°C TA = -55°C 0.02 0 30 1.6 0 6 12 18 24 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 2.4 1.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V ID = 10A 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Normalized On-Resistance vs. Ambient Temperature 2.0 1.6 1.2 ID = 1mA 0.8 ID = 250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 10,000 20 T A = 25°C f = 1MHz CT, TOTAL CAPACITANCE (pF) 16 IS, SOURCE CURRENT (A) NEW PRODUCT DMP2066LSN 12 1,000 8 Ciss 4 Coss Crss 100 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current DMP2066LSN Document number: DS31467 Rev. 3 - 2 1.2 3 of 4 www.diodes.com 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 20 August 2008 © Diodes Incorporated DMP2066LSN Ordering Information (Note 7) Part Number DMP2066LSN-7 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT Notes: Case SC-59 PS4 Date Code Key Year Code 2008 V Month Code 2009 W Jan 1 Feb 2 PS4 = Product Type Marking Code YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September 2010 X Mar 3 Apr 4 2011 Y May 5 2012 Z Jun 6 Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A SC-59 Min Max 0.35 0.50 B 1.50 1.70 C 2.70 3.00 D 0.95 G 1.90 H 2.90 3.10 J 0.013 0.10 K 1.00 1.30 L 0.35 0.55 M 0.10 0.20 N 0.70 0.80 8° 0° α All Dimensions in mm Dim A TOP VIEW B C G H K M N J L D Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 2.4 C 1.35 E E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP2066LSN Document number: DS31467 Rev. 3 - 2 4 of 4 www.diodes.com August 2008 © Diodes Incorporated