DMG4932LSD NEW PRODUCT ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency Low On-Resistance Low Input Capacitance Fast Switching Speed Utilizes Diodes’ Monolithic DIOFET Technology to Increase Conversion Efficiency 100% UIS and Rg Tested Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.072 grams (approximate) Q1 Diodes Schottky Integrated MOSFET D2 G2 D2 S2/D1 G1 S2/D1 S1 S2/D1 Top View Internal Schematic Top View Q2 D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Maximum Ratings – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 3) TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH Value 30 ±12 9.5 7.2 40 13 25.4 Unit V V Unit V V EAR Value 30 ±25 9.5 7.5 40 13 25.4 Symbol PD RθJA TJ, TSTG Value 1.19 107 -55 to +150 Unit W °C/W °C ID IDM IAR EAR A A A mJ Maximum Ratings – Q2 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH ID IDM IAR A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C DMG4932LSD Document number: DS32119 Rev. 4 - 2 1 of 9 www.diodes.com August 2010 © Diodes Incorporated DMG4932LSD Electrical Characteristics – Q1 @TA = 25°C unless otherwise specified Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (4.5V) Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 0.1 ±100 V mA nA VGS = 0V, ID = 1mA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 1.0 - 2.4 V RDS (ON) - 10 12 15 18 mΩ |Yfs| VSD IS - 14 0.4 - 0.6 5 S V A VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A - Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1932 154 121 2.68 18.1 42.0 4.5 4.0 6.16 7.22 36.76 5.38 - pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 9A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.7Ω 30 30 25 25 VDS = 5V ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS = 4.0V 20 20 VGS = 3.5V VGS = 3.0V 15 15 10 VGS = 150°C 10 VGS = 2.5V 5 VGS = 125°C VGS = 85°C 5 VGS = 25°C 0 VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG4932LSD Document number: DS32119 Rev. 4 - 2 VGS = -55°C VGS = 2.2V 2 2 of 9 www.diodes.com 0 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 August 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.020 0.015 VGS = 4.5V 0.010 VGS = 10V 0.005 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.03 T A = 150°C 0.02 TA = 125°C T A = 85°C 1.4 VGS = 10V ID = 10A 1.2 1.0 0.8 TA = 25°C 0.01 TA = -55°C 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 5A 0.6 -50 0.04 30 1.6 30 VGS = 4.5V ID = 5A 0.01 VGS = 10V ID = 10A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 30 2.5 25 IS, SOURCE CURRENT (A) 3.0 2.0 ID = 100mA 1.5 1.0 20 15 TA = 25°C 10 5 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS32119 Rev. 4 - 2 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.02 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) DMG4932LSD 5 0.03 Fig. 5 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4932LSD 3 of 9 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 August 2010 © Diodes Incorporated DMG4932LSD VGS, GATE-SOURCE VOLTAGE (V) 10 IDSS, LEAKAGE CURRENT (µA) 10,000 TA = 100°C 1,000 TA = 85°C 100 10 TA = 25°C 1 8 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Leakage Current vs. Drain-Source Voltage 30 VDS = 15V ID = 9A 6 4 2 0 0 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 10,000 f = 1MHz C, CAPACITANCE (pF) NEW PRODUCT 100,000 Ciss 1,000 Coss Crss 100 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Total Capacitance DMG4932LSD Document number: DS32119 Rev. 4 - 2 30 4 of 9 www.diodes.com August 2010 © Diodes Incorporated DMG4932LSD Electrical Characteristics – Q2 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 30 - - 1 +100 -800 V μA Gate-Source Leakage IGSS 1.0 - 2.3 V RDS (ON) - 12 16 15.8 23 mΩ |Yfs| VSD - 8 0.65 1.0 S V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 675 98 90 1.6 7.8 16.0 1.9 2.6 5.05 9.21 20.76 4.94 - pF pF pF Ω nC nC nC nC ns ns ns ns VGS(th) Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (4.5V) Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = +25V, VDS = 0V VGS = -25V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 9A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.7Ω 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 30 30 VGS = 4.5V VGS = 4.0V 25 25 VGS = 3.5V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT ON CHARACTERISTICS (Note 6) Gate Threshold Voltage nA Test Condition 20 20 VGS = 3.0V 15 15 10 VGS = 150°C 10 VGS = 2.5V VGS = 125°C VGS = 85°C 5 5 VGS = 25°C VGS = 2.2V VGS = -55°C VGS = 2.0V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic DMG4932LSD Document number: DS32119 Rev. 4 - 2 0 2 5 of 9 www.diodes.com 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 3 August 2010 © Diodes Incorporated 0.015 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.020 VGS = 4.5V VGS = 10V 0.010 0.005 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 5A 1.4 VGS = 10V ID = 10A 1.2 1.0 0.8 0.6 -50 0.04 VGS = 4.5V 0.03 TA = 150°C T A = 125°C 0.02 TA = 85°C TA = 25°C T A = -55°C 0.01 0 30 1.6 0 0 -50 IS, SOURCE CURRENT (A) 25 ID = 250µA 20 15 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0 Document number: DS32119 Rev. 4 - 2 6 of 9 www.diodes.com TA = 25°C 10 0.5 DMG4932LSD -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature 2.5 1.0 VGS = 10V ID = 10A 0.01 30 ID = 1mA 30 VGS = 4.5V ID = 5A 3.0 1.5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 0.02 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 2.0 5 0.03 Fig. 16 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4932LSD 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current August 2010 © Diodes Incorporated DMG4932LSD VGS, GATE-SOURCE VOLTAGE (V) IDSS, LEAKAGE CURRENT (nA) 10 10,000 T A = 150°C T A = 125°C 1,000 T A = 85°C 100 8 VDS = 15V ID = 9A 6 4 2 T A = 25°C 10 0 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Leakage Current vs. Drain-Source Voltage 30 10,000 P(PK), PEAK TRANSIENT POWER (W) 1,000 Ciss Coss 100 Crss 5 10 15 Qg , TOTAL GATE CHARGE (nC) Fig. 21 Gate-Charge Characteristics 20 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 22 Typical Total Capacitance Single Pulse RθJA = 113°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 9 8 7 6 5 4 3 2 1 10 0 10 f = 1MHz C, CAPACITANCE (pF) 1. DUT Mounted on 1 x MRP FR-4 Board 2. TJ = 150°C, PD = 1.12W(DC) 0 0.001 30 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 23 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 100,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 113°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG4932LSD Document number: DS32119 Rev. 4 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 24 Transient Thermal Response 7 of 9 www.diodes.com 10 100 1,000 August 2010 © Diodes Incorporated DMG4932LSD Ordering Information (Note 8) Part Number DMG4932LSD-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NEW PRODUCT (Top View) 8 5 Logo G4932LD Part no. YY WW Xth week: 01 ~ 53 Year: “10” = 2010 1 4 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4932LSD Document number: DS32119 Rev. 4 - 2 8 of 9 www.diodes.com August 2010 © Diodes Incorporated DMG4932LSD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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