DSS5240V NEW PRODUCT LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DSS4240V) Low Collector-Emitter Saturation Voltage, VCE(SAT) Surface Mount Package Suited for Automated Assembly Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 1) "Green Device" (Note 2) • • • • • Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.003 grams (approximate) 1, 2, 5, 6 6 5 4 1 2 3 3 4 Bottom View Top View Maximum Ratings Device Schematic Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Repetitive Collector Current (Note 3) Peak Pulse Collector Current Base Current (DC) Peak Base Current Symbol VCBO VCEO VEBO IC ICRP ICM IB IBM Value -40 -40 -5 -1.8 -2 -3 -300 -1 Unit V V V A A A mA A Symbol PD RθJA TJ, TSTG Value 600 208 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. No purposefully added lead. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Operated under pulse conditions: duty cycle ≤ 20%, pulse width tp ≤ 30ms. Device mounted on FR-4 PCB with minimum recommended pad layout. DSS5240V Document number: DS31673 Rev. 2 - 2 1 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS5240V Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO -40 -40 -5 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) ICES IEBO ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -100 -50 -100 -100 V V V nA μA nA nA hFE 300 300 250 160 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 800 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -120 -145 -250 -530 mV 250 -1.1 -1 mΩ V V VCE = -5V, IC = -1mA VCE = -5V, IC = -100mA VCE = -5V, IC = -500mA VCE = -5V, IC = -1A VCE = -5V, IC = -2A IC = -100mA, IB = -1mA IC = -500mA, IB = -50mA IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA IC = -1A, IB = -100mA VCE = -5V, IC = -1A VCB = -10V, f = 1.0MHz VCE = -10V, IC = -50mA, f = 100MHz DC Current Gain Test Condition IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -40V, IE = 0 VCB = -40V, IE = 0, TA = 150°C VCE = -40V, VBE = 0 VEB = -5V, IC = 0 Collector-Emitter Saturation Voltage VCE(SAT) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time RCE(SAT) VBE(SAT) VBE(ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Cobo fT ⎯ 150 ⎯ ⎯ 15 ⎯ pF MHz ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60 20 40 167 140 27 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ns ns ns ns ns VCC = -10V IC = -1A, IB1 = IB2 = -50mA 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 600 10 500 -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage 400 300 200 100 0 RθJA = 208°C/W 0 Pw = 1ms 1 0.1 DSS5240V Document number: DS31673 Rev. 2 - 2 150 2 of 5 www.diodes.com Pw = 100ms DC 0.01 0.001 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) Pw = 10ms 0.1 1 10 100 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 4) March 2009 © Diodes Incorporated DSS5240V 1 1,200 hFE, DC CURRENT GAIN T A = 150°C T A = 85°C 600 TA = 25°C 400 200 T A = -55°C 0.1 TA = 150°C T A = 85°C TA = 25°C 0.1 1,000 10,000 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1,000 10 100 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2 VCE = -5V 1.0 0.8 T A = -55°C 0.6 T A = 25°C 0.4 TA = 85°C 0.2 T A = 150°C 0.1 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 0 TA = -55°C 0.01 0.001 0 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 150°C 0.2 0 0.1 1 1,000 10,000 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 200 f = 1MHz 160 CAPACITANCE (pF) NEW PRODUCT 800 IC/IB = 10 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = -5V 1,000 120 80 Cibo 40 0 Cobo 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DSS5240V Document number: DS31673 Rev. 2 - 2 3 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS5240V NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 158°C/W D = 0.9 D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 8 Transient Thermal Response (Note 4) Ordering Information (Note 6) Part Number DSS5240V-7 Notes: Case SOT-563 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ZP8 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 ZP8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM 2010 X Mar 3 Apr 4 2011 Y May 5 2012 Z Jun 6 Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C D G M K H DSS5240V Document number: DS31673 Rev. 2 - 2 SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L 4 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS5240V Suggested Pad Layout C2 NEW PRODUCT Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS5240V Document number: DS31673 Rev. 2 - 2 5 of 5 www.diodes.com March 2009 © Diodes Incorporated