DSS20200L LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Complimentary NPN Type Available (DSS20201L) Lead Free By Design/RoHS Compliant (Note 1) “Green” Device (Note 2) • • NEW PRODUCT • • • Case: SOT-23 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B Top View Maximum Ratings E Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value -20 -20 -7 -4 -2 Unit V V V A A Symbol PD RθJA PD RθJA TJ, TSTG Value 600 209 1.2 104 -55 to +150 Unit mW °C/W mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. DSS20200L Document number: DS31604 Rev. 2 - 2 1 of 5 www.diodes.com December 2008 © Diodes Incorporated DSS20200L @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -20 -20 -7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -100 -100 V V V nA nA ⎯ ⎯ ⎯ ⎯ ⎯ -50 -100 -80 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -13 -90 -120 -180 90 -0.9 -0.9 mΩ V V Collector-Emitter Saturation Voltage VCE(SAT) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS RCE(SAT) VBE(SAT) VBE(ON) 250 250 180 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ fT 100 ⎯ ⎯ MHz Cobo Cibo ⎯ ⎯ ⎯ ⎯ 100 330 pF pF ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 180 60 120 430 300 130 ns ns ns ns ns ns DC Current Gain hFE Transition Frequency Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time ⎯ mV Test Conditions IC = -100μA IC = -10mA IE = -100μA VCB = -20V, IE = 0 VEB = -7V, IC = 0 VCE = -2V, IC = -10mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A VCE = -2V, IC = -2A IC = -0.1A, IB = -10mA IC = -1A, IB = -100mA IC = -1A, IB = -10mA IC = -2A, IB = -200mA IC = -2A, IB = -200mA IC = -1A, IB = -10mA VCE = -2V, IC = -1A VCE = -5V, IC = -100mA, f = 100MHz VCB = -3V, f = 1MHz VEB = -0.5V, f = 1MHz VCC = -15V, IC = -750mA, IB1 = -15mA VCC = -15V, IC = -750mA, IB1 = IB2 = -15mA 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 10 1.6 -IC, COLLECTOR CURRENT (A) 1.4 PD, POWER DISSIPATION (W) NEW PRODUCT Electrical Characteristics 1.2 1.0 (Note 4) 0.8 0.6 (Note 3) 0.4 Pw = 10ms 1 Pw = 100ms 0.1 DC 0.01 0.2 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature DSS20200L Document number: DS31604 Rev. 2 - 2 0.001 0.1 2 of 5 www.diodes.com 1 10 100 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage December 2008 © Diodes Incorporated DSS20200L 2.0 1,000 T A = 150°C hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) 1.6 IB = -5mA 1.4 1.2 IB = -4mA 1.0 IB = -3mA 0.8 IB = -2mA 0.6 T A = 85°C TA = 25°C T A = -55°C 100 VCE = -2V 0.4 IB = -1mA 0.2 0 1 IC/IB = 10 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 0.1 2 4 6 8 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 0.1 T A = 150°C T A = 85°C TA = 25°C 0.01 TA = -55°C 0.001 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0 1.2 VCE = -2V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C T A = 150°C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 IC/IB = 10 f = 1MHz 1.0 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 1.8 0.8 TA = -55°C 0.6 T A = 25°C TA = 85°C 0.4 100 Cibo Cobo 10 TA = 150°C 0.2 0 1 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current DSS20200L Document number: DS31604 Rev. 2 - 2 3 of 5 www.diodes.com 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics December 2008 © Diodes Incorporated DSS20200L NEW PRODUCT fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 100 10 VCE = -5V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RθJA(t) = r(t) * RθJA RθJA = 166°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response Ordering Information (Note 6) Part Number DSS20200L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ZP1 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DSS20200L Document number: DS31604 Rev. 2 - 2 Mar 3 YM Marking Information 2010 X Apr 4 ZP1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 4 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D December 2008 © Diodes Incorporated DSS20200L Package Outline Dimensions A NEW PRODUCT B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS20200L Document number: DS31604 Rev. 2 - 2 5 of 5 www.diodes.com December 2008 © Diodes Incorporated