2DB1714 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary NPN Type (2DD2679) Available Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) • • • • • COLLECTOR 2,4 3 E C 4 1 BASE 1 B 3 EMITTER Top View Maximum Ratings 2 C TOP VIEW Device Schematic Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value -30 -30 -6 -4 -2 Unit V V V A A Symbol PD RθJA PD RθJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. Symbol Min Typ Max Unit Conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -30 -30 -6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.1 -0.1 V V V μA μA IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -30V, IE = 0 VEB = -6V, IC = 0 VCE(SAT) hFE ⎯ 270 ⎯ ⎯ -370 680 mV ⎯ IC = -1.5A, IB = -75mA VCE = -2V, IC = -200mA Cobo ⎯ 16 ⎯ pF fT ⎯ 200 ⎯ MHz VCB = -10V, IE = 0, f = 1MHz VCE = -2V, IC = -100mA, f = 100MHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DB1714 Document number: DS31610 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1714 1.6 Pw = 10ms -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 10 1.2 0.8 0.4 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 150 1 Pw = 100ms DC 0.1 0.01 0.001 0.1 1 10 100 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) 1,000 1.6 T A = 150°C TA = 25°C IB = -5mA 1.2 1.0 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) 1.4 IB = -4mA 0.8 IB = -3mA 0.6 IB = -2mA 0.4 100 VCE = -2V 0 10 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 10 IC/IB = 20 1 TA = 150°C TA = 85°C 0.1 T A = 25°C T A = -55°C 0.01 0.001 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 2DB1714 Document number: DS31610 Rev. 2 - 2 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0 TA = 85°C TA = -55°C IB = -1mA 0.2 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 2.0 2 of 4 www.diodes.com 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current 1.2 VCE = -2V 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 T A = 150°C 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current December 2008 © Diodes Incorporated f = 1MHz IC/IB = 20 1.0 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1,000 1.2 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 100 Cibo 10 Cobo T A = 150°C 0.2 0 1 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 100 10 VCE = -2V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 2DB1714 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RθJA(t) = r(t) * RθJA RθJA = 128°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - T A = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response 2DB1714 Document number: DS31610 Rev. 2 - 2 3 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1714 Ordering Information (Note 6) Part Number 2DB1714-13 Notes: Case SOT89-3L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information 1714 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 YWW 1714 Package Outline Dimensions R0 D1 .2 00 C E H L B e B1 8° (4 X ) A SOT89-3L Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e — — 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm D Suggested Pad Layout X1 Dimensions Value (in mm) X1 1.7 X2 0.9 X3 0.4 Y1 2.7 Y2 1.3 Y3 1.9 C 3.0 Y1 X3 X2 Y3 Y2 C IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2DB1714 Document number: DS31610 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 © Diodes Incorporated