MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Low Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B Top View Maximum Ratings E Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Value 75 40 6.0 600 800 Unit V V V mA mA Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT2222A Document number: DS30041 Rev. 12 - 2 1 of 4 www.diodes.com September 2008 © Diodes Incorporated MMBT2222A Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 75 40 6.0 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ 10 Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) ICEX IEBO IBL ⎯ ⎯ ⎯ 10 10 20 V V V nA μA nA nA nA hFE 35 50 75 100 40 50 35 ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.3 1.0 V Base-Emitter Saturation Voltage VBE(SAT) 0.6 ⎯ 1.2 2.0 V Cobo Cibo ⎯ — 8 25 pF pF Current Gain-Bandwidth Product fT 300 ⎯ MHz Noise Figure NF ⎯ 4.0 dB Delay Time td ⎯ 10 ns Rise Time tr ⎯ 25 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 60 ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Test Condition IC = 10μA, IE = 0 IC = 10mA, IB = 0 IE = 10μA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100μA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 3.0V, IC = 150mA, IB1 = 15mA, VBE(OFF) = 0.5V VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 4. Short duration pulse test used to minimize self-heating effect. 400 1,000 Note 1 TA = 125°C 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 200 150 100 100 TA = -25°C TA = 25°C 10 50 VCE = 1.0V 0 1 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 0 MMBT2222A Document number: DS30041 Rev. 12 - 2 2 of 4 www.diodes.com 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.1 September 2008 © Diodes Incorporated VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) MMBT2222A 0.5 VCE(SAT), COLLECTOR -EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 0.3 T A = 150°C 0.2 0.1 TA = -50°C 0 1.0 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Turn-On Voltage vs. Collector Current 100 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) f = 1MHz 30 25 CAPACITANCE (pF) TA = -50°C 0.8 1 35 VCE = 5V 0.9 VCE = 5V 100 20 Cibo 15 10 Cobo 5 10 1 0 0 8 10 12 14 16 18 6 VR, REVERSE VOLTS (V) Fig. 5 Typical Capacitance Characteristics 2 4 20 1 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Gain Bandwidth Product vs. Collector Current 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 100 1 IB, BASE CURRENT (mA) Fig. 7 Typical Collector Saturation Region 0.01 MMBT2222A Document number: DS30041 Rev. 12 - 2 3 of 4 www.diodes.com September 2008 © Diodes Incorporated MMBT2222A Ordering Information (Note 5) Part Number MMBT2222A-7-F Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information K1P Date Code Key Year 1998 Code J Month Code 1999 K Jan 1 2000 L 2001 M Feb 2 2002 N Mar 3 2003 P Apr 4 2004 2005 R S May 5 K1P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2006 T Jun 6 2007 U Jul 7 2008 V 2009 W Aug 8 2010 X Sep 9 2011 Y 2012 Z Oct O 2013 A 2014 B Nov N 2015 C Dec D Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 C X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBT2222A Document number: DS30041 Rev. 12 - 2 4 of 4 www.diodes.com September 2008 © Diodes Incorporated