DSS4540X LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Complementary PNP Type Available (DSS5540X) Ultra Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) COLLECTOR 2,4 3 E C 4 1 BASE Top View Maximum Ratings 2 C 1 B 3 EMITTER Device Schematic Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Repetitive Collector Current (Note 3) Peak Pulse Collector Current Continuous Base Current Peak Pulse Base Current Symbol VCBO VCEO VEBO IC ICRM ICM IB IBM Value 40 40 6 4 5 10 1 2 Unit V V V A A A A A Symbol PD RθJA PD RθJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Power Dissipation (Note 5) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. 5. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Operated under pulsed conditions: pulse width ≤ 10ms; duty cycle ≤ 0.2. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. DSS4540X Document number: DS31592 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated DSS4540X Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 40 40 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 100 V V V nA μA nA nA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 80 160 185 37 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 90 120 150 290 355 71 1.1 1.2 1.1 Collector-Base Cutoff Current ICBO Collector-Emitter Cut-Off Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 6) ICES IEBO Collector-Emitter Saturation Voltage VCE(SAT) Equivalent On-Resistance RCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS VBE(ON) 300 300 250 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Transition Frequency fT 70 ⎯ ⎯ MHz Collector Capacitance Cc ⎯ ⎯ 75 pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 135 60 75 670 570 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ns ns ns ns ns DC Current Gain Notes: hFE ⎯ mV mΩ V V Test Conditions IC = 100μA IC = 10mA IE = 100μA VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 150°C VCE = 30V, VBE = 0V VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 2V, IC = 5A IC = 0.5A, IB = 5mA IC = 1A, IB = 10mA IC = 2A, IB = 200mA IC = 4A, IB = 200mA IC = 5A, IB = 500mA IC = 5A, IB = 500mA IC = 4A, IB = 200mA IC = 5A, IB = 500mA VCE = 2V, IC = 2A VCE = 10V, IC = 0.1A, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz VCC = 10V, IC = 2A, IB1 = 40mA VCC = 10V, IC = 2A, IB1 = IB2 = 40mA 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 4.0 2.0 IC, COLLECTOR CURRENT (A) 3.5 PD, POWER DISSIPATION (W) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage 1.6 1.2 Note 5 0.8 Note 4 0.4 IB = 10mA 3.0 IB = 8mA 2.5 IB = 6mA 2.0 1.5 IB = 4mA 1.0 IB = 2mA 0.5 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature DSS4540X Document number: DS31592 Rev. 2 - 2 2 of 4 www.diodes.com 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 5 December 2008 © Diodes Incorporated DSS4540X 800 1 700 IC/IB = 10 VCE = 2V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 T A = 85°C 500 400 T A = 25°C 300 200 TA = -55°C 0.1 T A = 150°C TA = 85°C TA = 25°C TA = -55°C 0.01 100 0 0.001 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 2V 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 150°C 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 10 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 T A = 150°C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) f = 1MHz CAPACITANCE (pF) NEW PRODUCT TA = 150°C 100 Cibo 10 Cobo 100 10 VCE = 10V f = 100MHz 1 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DSS4540X Document number: DS31592 Rev. 2 - 2 3 of 4 www.diodes.com 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current December 2008 © Diodes Incorporated DSS4540X Ordering Information (Note 7) Part Number DSS4540X-13 NEW PRODUCT Notes: Case SOT89-3L Packaging 2500/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ZNS54 = Product Type Marking Code = Manufacturer’s Code Marking YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 YWW ZNS54 Package Outline Dimensions R0 D1 .2 00 C E SOT89-3L Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e — — 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm H L B e B1 8° (4 X ) A D Suggested Pad Layout X1 Y1 X3 X2 Y3 Y2 Dimensions Value (in mm) X1 1.7 X2 0.9 X3 0.4 Y1 2.7 Y2 1.3 Y3 1.9 C 3.0 C IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS4540X Document number: DS31592 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 © Diodes Incorporated