VESD05A1-02V Vishay Semiconductors ESD-Protection Diode in SOD523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Typ. capacitance 130 pF • Leakage current < 1 µA (VR = 5 V) • AEC Q101 qualified • Lead (Pb)-free component • Lead finish = "e3" = matte tin (Sn) • Non-magnetic package material • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 20278 19344 Marking (example only) XY Bar = Cathode marking X = Date code Y = Type code (see table below) 20279 Ordering Information Device name VESD05A1-02V Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity VESD05A1-02V-GS08 3000 3000 Package Data Device name Package name Type code Weight Molding compound flammability rating VESD05A1-02V SOD523 F 1.5 mg UL 94 V-0 Moisture sensitivity level Soldering conditions MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Absolute Maximum Ratings Test condition Symbol Value Peak pulse current Rating Acc. IEC 61000-4-5, tP = 8/20 µs/single shot IPPM 16 A Peak pulse power Acc. IEC 61000-4-5, tP = 8/20 µs/single shot PPP 192 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C ESD immunity Operating temperature Storage temperature Document Number 84702 Rev. 1.3, 27-Oct-08 For technical support, please contact: [email protected] Unit www.vishay.com 1 VESD05A1-02V Vishay Semiconductors BiAs-Mode (Bidirectional Asymmetrical protection mode) With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behaviour is Bidirectional and Asymmetrical (BiAs). 1 2 L1 20280 Electrical Characteristics Ratings at 25 °C ambient temperature, unless otherwise specified VESD05A1-02V BiAs mode (between pin 1 and pin 2) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 5 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A; 8/20 µs test pulse Protection paths Min. Typ. Max. Unit 1 lines 5 V < 0.1 1 µA 6.8 7.5 V VC 7.2 8.5 V at IPP = IPPM = 16 A; 8/20 µs test pulse VC 10.5 12 V at IPP = 0.2 A; 8/20 µs test pulse VF 0.88 1.1 V at IPP = 1 A; 8/20 µs test pulse VF 1.0 1.5 V at IPP = IPPM = 16 A; 8/20 µs test pulse VF 3.2 4.5 V at VR = 0 V; f = 1 MHz CD 130 150 pF at VR = 2.5 V; f = 1 MHz CD 76 6 Reverse clamping voltage Forward clamping voltage Capacitance www.vishay.com 2 For technical support, please contact: [email protected] pF Document Number 84702 Rev. 1.3, 27-Oct-08 VESD05A1-02V Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 120 % Rise time = 0.7 ns to 1 ns Discharge Current IESD 100 % 10 80 % 1 IF (mA) 60 % 53 % 0.1 40 % 27 % 0.01 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 0.6 0.7 19335 Time (ns) 20557 0.001 0.5 Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) 0.8 0.9 VF (V) Figure 4. Typical Forward Current IF vs. Forward Voltage VF 8 8 µs to 100 % 100 % 7 6 80 % 5 VR (V) IPPM 60 % 20 µs to 50 % 40 % 4 3 2 20 % 1 0% 0 10 20548 20 30 0 0.01 40 Time (µs) 0.1 1 Figure 2. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 10 100 1000 10 000 IR (µA) 19336 Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 150 12 f = 1 MHz 125 10 100 8 VC (V) CD (pF) reverse 75 Measured acc. IEC 61000-4-5 (8/20µs - Waveform) 6 50 4 25 2 forward 0 0 0 1 19334 2 3 4 VR (V) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR Document Number 84702 Rev. 1.3, 27-Oct-08 0 5 4 19337 8 12 16 IPP (A) Figure 6. Typical Clamping Voltage vs. Peak Pulse Current IPP For technical support, please contact: [email protected] www.vishay.com 3 VESD05A1-02V Vishay Semiconductors 50 VESD = + 8 kV acc. IEC 61000-4-2 40 30 VC-ESD (V) 20 10 0 - 10 - 20 - 30 - 40 - 50 - 10 0 10 20 30 40 50 60 70 80 90 19339 t (ns) Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 50 VESD = - 8 kV acc. IEC 61000-4-2 40 30 VC-ESD (V) 20 10 0 - 10 - 20 - 30 - 40 - 50 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 19338 Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 200 Reverse: overshoot at pos. ESD 150 VC-ESD (V) 100 50 acc. IEC 61000-4-2 contact discharge 0 - 50 - 100 - 150 Forward: undershoot at neg. ESD - 200 0 19341 5 10 15 20 25 30 VESD (kV) Figure 9. Typical Clamping Voltage at ± ESD Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical support, please contact: [email protected] Document Number 84702 Rev. 1.3, 27-Oct-08 VESD05A1-02V Vishay Semiconductors 0.2 [0.008] 0.1 [0.004] 0.7 [0.028] 0.5 [0.020] Package Dimensions in millimeters (inches): SOD523 0.9 [0.035] 1.7 [0.067] 1.5 [0.059] 0.7 [0.028] 0.4 [0.016] 0.35 [0.014] 0.25 [0.010] foot print recommendation: 1.45 [0.057] 1.3 [0.051] 1.1 [0.043] 0.35 [0.014] Document no.: S8-V-3880.02-001 Rev. f - Date: 25. January. 2005 16864 Document Number 84702 Rev. 1.3, 27-Oct-08 For technical support, please contact: [email protected] www.vishay.com 5 VESD05A1-02V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: [email protected] Document Number 84702 Rev. 1.3, 27-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1