VISHAY VESD01-02V-G-08

VESDxx-02V
Vishay Semiconductors
Single ESD-Protection Diode in SOD-523
FEATURES
• Single-line ESD-protection
• Low leakage current
1
• ESD-immunity acc. IEC 61000-4-2
± 8 kV contact discharge
± 15 kV air discharge
2
20278
19344
• e3 - Sn
• Compliant to RoHS Directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
MARKING (example only)
XY
20279
Bar = cathode marking
X = date code
Y = type code (see table below)
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VESD01-02V
VESD01-02V-G-08
3000
3000
VESD03-02V
VESD03-02V-G-08
3000
3000
VESD05-02V
VESD05-02V-G-08
3000
3000
VESD08-02V
VESD08-02V-G-08
3000
3000
VESD12-02V
VESD12-02V-G-08
3000
3000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
VESD01-02V
SOD-523
.
A
1.4 mg
VESD03-02V
SOD-523
.
B
1.4 mg
VESD05-02V
SOD-523
.
C
1.4 mg
VESD08-02V
SOD-523
.
D
1.4 mg
VESD12-02V
SOD-523
.
E
1.4 mg
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 83367
Rev. 1.0, 08-Nov-10
For technical questions, contact: [email protected]
www.vishay.com
1
VESDxx-02V
Vishay Semiconductors
Single ESD-Protection Diode in
SOD-523
ABSOLUTE MAXIMUM RATINGS VESD01-02V
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
IPPM
7
A
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
PPP
63
W
Contact discharge acc. IEC 61000-4-2; 10 pulses
UNIT
±8
kV
± 15
kV
TJ
Tstg
- 40 to + 125
°C
- 55 to + 150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
IPPM
9
A
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
PPP
108
W
ESD immunity
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
VESD
ABSOLUTE MAXIMUM RATINGS VESD03-02V
PARAMETER
Contact discharge acc. IEC 61000-4-2; 10 pulses
±8
kV
± 15
kV
TJ
Tstg
- 40 to + 125
°C
- 55 to + 150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
IPPM
6
A
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
PPP
120
W
ESD immunity
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
VESD
ABSOLUTE MAXIMUM RATINGS VESD05-02V
PARAMETER
Contact discharge acc. IEC 61000-4-2; 10 pulses
±8
kV
± 15
kV
TJ
Tstg
- 40 to + 125
°C
- 55 to + 150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
IPPM
4
A
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
PPP
120
W
ESD immunity
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
VESD
ABSOLUTE MAXIMUM RATINGS VESD08-02V
PARAMETER
Contact discharge acc. IEC 61000-4-2; 10 pulses
±8
kV
± 15
kV
TJ
Tstg
- 40 to + 125
°C
- 55 to + 150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
IPPM
2
A
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
PPP
25
W
ESD immunity
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
VESD
ABSOLUTE MAXIMUM RATINGS VESD12-02V
PARAMETER
ESD immunity
Operating temperature
Storage temperature
Document Number: 83367
Rev. 1.0, 08-Nov-10
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
TJ
Tstg
For technical questions, contact: [email protected]
±8
kV
± 15
kV
- 40 to + 125
°C
- 55 to + 150
°C
www.vishay.com
2
VESDxx-02V
Single ESD-Protection Diode in
SOD-523
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD01-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
1
-
-
V
Reverse current
at VRWM
IR
-
-
100
µA
V
Protection paths
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IR = 1 mA
VBR
1.5
-
-
at IPP (see fig. 1)
VC
-
9
-
V
at VR = 0 V; f = 1 MHz
CD
-
180
-
pF
ELECTRICAL CHARACTERISTICS VESD03-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
3
-
-
V
Reverse current
at VRWM
IR
-
-
20
µA
Protection paths
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IR = 1 mA
VBR
4
-
-
V
at IPP (see fig. 1)
VC
-
12
-
V
at VR = 0 V; f = 1 MHz
CD
-
110
-
pF
ELECTRICAL CHARACTERISTICS VESD05-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
5
-
-
V
Reverse current
at VRWM
IR
-
-
0.1
µA
V
Protection paths
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IR = 1 mA
VBR
6.5
-
-
at IPP (see fig. 1)
VC
-
20
-
V
at VR = 0 V; f = 1 MHz
CD
-
55
-
pF
ELECTRICAL CHARACTERISTICS VESD08-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
8
-
-
V
Reverse current
at VRWM
IR
-
-
0.1
µA
Protection paths
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IR = 1 mA
VBR
9
-
-
V
at IPP (see fig. 1)
VC
-
30
-
V
at VR = 0 V; f = 1 MHz
CD
-
35
-
pF
ELECTRICAL CHARACTERISTICS VESD12-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
12
-
-
V
Reverse current
at VRWM
IR
-
-
0.1
µA
Protection paths
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
Document Number: 83367
Rev. 1.0, 08-Nov-10
at IR = 1 mA
VBR
14
-
-
V
at IPP (see fig. 1)
VC
-
25
-
V
at VR = 0 V; f = 1 MHz
CD
-
30
-
pF
For technical questions, contact: [email protected]
www.vishay.com
3
VESDxx-02V
Single ESD-Protection Diode in
SOD-523
Vishay Semiconductors
0.7 (0.028)
1.7 (0.067)
0.9 (0.035)
1.5 (0.059)
0.7 (0.028)
0.5 (0.020)
0.1 (0.004) max.
0.08 (0.003)
0.20 (0.008)
PACKAGE DIMENSIONS in millimeters (inches): SOD-523
1.3 (0.051)
1.1 (0.043)
0.4 (0.016)
0.35 (0.014)
0.18 (0.007)
foot print recommendation:
1.45 (0.057)
Document no.: S8-V-3880.02-001 (4)
Rev. h - Date: 13. Oct. 2010
0.35 (0.014)
16864
Document Number: 83367
Rev. 1.0, 08-Nov-10
For technical questions, contact: [email protected]
www.vishay.com
4
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1