VESDxx-02V Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Low leakage current 1 • ESD-immunity acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge 2 20278 19344 • e3 - Sn • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MARKING (example only) XY 20279 Bar = cathode marking X = date code Y = type code (see table below) ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VESD01-02V VESD01-02V-G-08 3000 3000 VESD03-02V VESD03-02V-G-08 3000 3000 VESD05-02V VESD05-02V-G-08 3000 3000 VESD08-02V VESD08-02V-G-08 3000 3000 VESD12-02V VESD12-02V-G-08 3000 3000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD01-02V SOD-523 . A 1.4 mg VESD03-02V SOD-523 . B 1.4 mg VESD05-02V SOD-523 . C 1.4 mg VESD08-02V SOD-523 . D 1.4 mg VESD12-02V SOD-523 . E 1.4 mg ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83367 Rev. 1.0, 08-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 VESDxx-02V Vishay Semiconductors Single ESD-Protection Diode in SOD-523 ABSOLUTE MAXIMUM RATINGS VESD01-02V PARAMETER TEST CONDITIONS SYMBOL VALUE Peak pulse current acc. IEC 61000-4-5, 8/20 µs/single shot IPPM 7 A Peak pulse power acc. IEC 61000-4-5, 8/20 µs/single shot PPP 63 W Contact discharge acc. IEC 61000-4-2; 10 pulses UNIT ±8 kV ± 15 kV TJ Tstg - 40 to + 125 °C - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 61000-4-5, 8/20 µs/single shot IPPM 9 A Peak pulse power acc. IEC 61000-4-5, 8/20 µs/single shot PPP 108 W ESD immunity Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS VESD03-02V PARAMETER Contact discharge acc. IEC 61000-4-2; 10 pulses ±8 kV ± 15 kV TJ Tstg - 40 to + 125 °C - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 61000-4-5, 8/20 µs/single shot IPPM 6 A Peak pulse power acc. IEC 61000-4-5, 8/20 µs/single shot PPP 120 W ESD immunity Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS VESD05-02V PARAMETER Contact discharge acc. IEC 61000-4-2; 10 pulses ±8 kV ± 15 kV TJ Tstg - 40 to + 125 °C - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 61000-4-5, 8/20 µs/single shot IPPM 4 A Peak pulse power acc. IEC 61000-4-5, 8/20 µs/single shot PPP 120 W ESD immunity Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS VESD08-02V PARAMETER Contact discharge acc. IEC 61000-4-2; 10 pulses ±8 kV ± 15 kV TJ Tstg - 40 to + 125 °C - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 61000-4-5, 8/20 µs/single shot IPPM 2 A Peak pulse power acc. IEC 61000-4-5, 8/20 µs/single shot PPP 25 W ESD immunity Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS VESD12-02V PARAMETER ESD immunity Operating temperature Storage temperature Document Number: 83367 Rev. 1.0, 08-Nov-10 Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD TJ Tstg For technical questions, contact: [email protected] ±8 kV ± 15 kV - 40 to + 125 °C - 55 to + 150 °C www.vishay.com 2 VESDxx-02V Single ESD-Protection Diode in SOD-523 Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD01-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 1 - - V Reverse current at VRWM IR - - 100 µA V Protection paths Reverse breakdown voltage Reverse clamping voltage Capacitance at IR = 1 mA VBR 1.5 - - at IPP (see fig. 1) VC - 9 - V at VR = 0 V; f = 1 MHz CD - 180 - pF ELECTRICAL CHARACTERISTICS VESD03-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 3 - - V Reverse current at VRWM IR - - 20 µA Protection paths Reverse breakdown voltage Reverse clamping voltage Capacitance at IR = 1 mA VBR 4 - - V at IPP (see fig. 1) VC - 12 - V at VR = 0 V; f = 1 MHz CD - 110 - pF ELECTRICAL CHARACTERISTICS VESD05-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 5 - - V Reverse current at VRWM IR - - 0.1 µA V Protection paths Reverse breakdown voltage Reverse clamping voltage Capacitance at IR = 1 mA VBR 6.5 - - at IPP (see fig. 1) VC - 20 - V at VR = 0 V; f = 1 MHz CD - 55 - pF ELECTRICAL CHARACTERISTICS VESD08-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 8 - - V Reverse current at VRWM IR - - 0.1 µA Protection paths Reverse breakdown voltage Reverse clamping voltage Capacitance at IR = 1 mA VBR 9 - - V at IPP (see fig. 1) VC - 30 - V at VR = 0 V; f = 1 MHz CD - 35 - pF ELECTRICAL CHARACTERISTICS VESD12-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 12 - - V Reverse current at VRWM IR - - 0.1 µA Protection paths Reverse breakdown voltage Reverse clamping voltage Capacitance Document Number: 83367 Rev. 1.0, 08-Nov-10 at IR = 1 mA VBR 14 - - V at IPP (see fig. 1) VC - 25 - V at VR = 0 V; f = 1 MHz CD - 30 - pF For technical questions, contact: [email protected] www.vishay.com 3 VESDxx-02V Single ESD-Protection Diode in SOD-523 Vishay Semiconductors 0.7 (0.028) 1.7 (0.067) 0.9 (0.035) 1.5 (0.059) 0.7 (0.028) 0.5 (0.020) 0.1 (0.004) max. 0.08 (0.003) 0.20 (0.008) PACKAGE DIMENSIONS in millimeters (inches): SOD-523 1.3 (0.051) 1.1 (0.043) 0.4 (0.016) 0.35 (0.014) 0.18 (0.007) foot print recommendation: 1.45 (0.057) Document no.: S8-V-3880.02-001 (4) Rev. h - Date: 13. Oct. 2010 0.35 (0.014) 16864 Document Number: 83367 Rev. 1.0, 08-Nov-10 For technical questions, contact: [email protected] www.vishay.com 4 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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