BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage Vdc VCES BC372 BC373 Emitter−Base Voltage Vdc MARKING DIAGRAM 100 80 VEBO 12 Vdc Collector Current − Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range EMITTER 1 100 80 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 12 TO−92 CASE 29 STYLE 1 3 BC37x = Device Code x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC372 BC372G BC373 BC373G BC373RL1 BC373RL1G BC373ZL1 BC373ZL1G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 BC 37x AYWW G G Package Shipping † TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC372/D BC372, BC373 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 100 80 − − − − 100 80 − − − − 12 − − − − − − 100 100 − − 100 8.0 10 − − − 160 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) V(BR)CES BC372 BC373 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CBO BC372 BC373 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Vdc ICBO BC372 BC373 Emitter Cutoff Current (VEB = 10 V, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) K Collector −Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VCE(sat) − 1.0 1.1 Vdc Base −Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VBE(sat) − 1.4 2.0 Vdc fT 100 200 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 10 25 pF Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz) NF − 2.0 − dB DYNAMIC CHARACTERISTICS Current−Gain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 BC372, BC373 100 K 1.6 VCE = 5 V hFE , DC CURRENT GAIN TA = 125°C 1.2 VOLTAGE (V) 25°C −55°C 10 K VBE(sat) @ IC/IB = 100 1.4 VBE(on) @ VCE = 5 V 1 0.8 VCE(sat) @ IC/IB = 100 0.6 0.4 0.2 1K 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 5 1000 500 100 VCE = 5 V TJ = 25°C 100 10 0.6 1 100 IC, COLLECTOR CURRENT (mA) Figure 2. “Saturation” and “On” Voltages C, CAPACITANCE (pF) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 10 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 1 0.1 600 Figure 3. Current−Gain — Bandwidth Product Cob 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances http://onsemi.com 3 100 BC372, BC373 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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