BC237, BC237B, BC237C, BC239C Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* 2 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC237 BC239 Collector −Emitter Voltage Vdc VCES BC237 BC239 Collector −Emitter Voltage 3 EMITTER 45 25 Vdc MARKING DIAGRAM Vdc BC23 xy AYWW G G 50 30 VEBO BC237 BC239 6.0 5.0 Collector Current − Continuous IC 100 mAdc Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 350 2.8 mW mW/°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 1.0 8.0 W mW/°C Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Thermal Resistance, Junction−to−Case RqJC 125 °C/W THERMAL CHARACTERISTICS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 12 TO−92 CASE 29 STYLE 17 3 BC23xy = Device Code x = 7 or 9 y = B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC237 TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk BC237B TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk BC237BRL1 BC237BRL1G BC237BZL1 BC237BZL1G BC237C BC237CG © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Shipping † BC237G BC237BG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Package †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC237/D BC237, BC237B, BC237C, BC239C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) BC237 BC239 V(BR)CEO 45 25 − − − − V Emitter −Base Breakdown Voltage (IE = 100 mA, IC = 0) BC237 BC239 V(BR)EBO 6.0 5.0 − − − − V Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 30 V, VBE = 0) TA = 125°C (VCE = 50 V, VBE = 0) TA = 125°C BC239 BC237 BC239 BC237 − − − − 0.2 0.2 0.2 0.2 15 15 4.0 4.0 nA − − 120 200 380 − − 150 270 − 290 500 180 300 − − 800 460 800 − − − − 0.07 0.2 0.2 0.6 − − 0.6 − 0.83 1.05 − 0.55 − 0.5 0.62 0.83 − 0.7 − − − 150 150 100 140 200 280 − − − − ICES mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector −Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) hFE BC237B BC237C/239C BC237 BC237B BC237C/239C BC237B BC237C/239C − VCE(sat) BC237/BC239 BC237/BC239 Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base−Emitter On Voltage (IC = 100 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) VBE(on) V V V DYNAMIC CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC237 BC239 BC237 BC239 (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) MHz Collector−Base Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo − − 4.5 pF Emitter−Base Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo − 8.0 − pF − − − 2.0 2.0 2.0 4.0 10 4.0 Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) NF BC239 BC237 BC239 Figure 1. http://onsemi.com 2 dB BC237, BC237B, BC237C, BC239C 1.0 VCE = 10 V TA = 25°C 1.5 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25°C 100 80 60 TA = 25°C Cib 5.0 3.0 Cob 2.0 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 1.0 0.4 50 Figure 3. Current−Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) TA = 25°C 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 5. Base Spreading Resistance http://onsemi.com 3 10 20 40 BC237, BC237B, BC237C, BC239C PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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