MPS650, MPS651, NPN MPS750, MPS751, PNP MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Symbol MPS650 MPS750 MPS651 MPS751 Unit Collector −Emitter Voltage VCE 40 60 Vdc Collector −Base Voltage VCB 60 80 Vdc Emitter −Base Voltage Rating VEB 5.0 Vdc Collector Current − Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg COLLECTOR 3 2 BASE 2 BASE 1 EMITTER NPN 1 EMITTER PNP MARKING DIAGRAM MPS xxx AYWW Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO−92 CASE 29−11 THERMAL CHARACTERISTICS Characteristic COLLECTOR 3 Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W xxx A Y WW = Specific Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 May, 2005 − Rev. 2 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPS650/D MPS650, MPS651, NPN MPS750, MPS751, PNP ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 60 − − 60 80 − − 5.0 − − − 0.1 0.1 − 0.1 75 75 75 40 − − − − − − 0.5 0.3 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) MPS650, MPS750 MPS651, MPS751 MPS650, MPS750 MPS651, MPS751 Emitter −Base Breakdown Voltage (IC = 0, IE = 10 mAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO MPS650, MPS750 MPS651, MPS751 Emitter Cutoff Current (VEB = 4.0 V, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) − Collector −Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) VCE(sat) Vdc Base−Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) − 1.0 Vdc Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VBE(sat) − 1.2 Vdc fT 75 − MHz SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 MPS650, MPS651, NPN MPS750, MPS751, PNP NPN PNP 300 250 240 225 VCE = 2.0 V TJ = 125°C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 270 210 180 25°C 150 120 −55 °C 90 TJ = 125°C 60 30 200 175 25°C 150 125 100 −55 °C 75 50 25 0 10 20 50 0 −10 −20 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. MPS650, MPS651 Typical DC Current Gain −1.6 1.4 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) −1.8 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 PNP −2.0 1.8 1.0 −50 −100 −200 −500 −1.0 A −2.0 A −4.0 A IC, COLLECTOR CURRENT (mA) Figure 2. MPS750, MPS751 Typical DC Current Gain NPN 2.0 0.4 −1.4 −1.2 VBE(sat) @ IC/IB = 10 −1.0 −0.8 VBE(on) @ VCE = 2.0 V −0.6 −0.4 VCE(sat) @ IC/IB = 10 0.2 0 VCE = −2.0 V 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 −0.2 2.0 A 0 4.0 A −50 Figure 3. MPS650, MPS651 On Voltages −100 −200 −500 −1.0 A IC, COLLECTOR CURRENT (mA) Figure 4. MPS750, MPS751 On Voltages http://onsemi.com 3 −2.0 A −4.0 A NPN 1.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MPS650, MPS651, NPN MPS750, MPS751, PNP 0.9 −0.9 0.8 −0.7 0.6 −0.6 0.5 −0.5 0.4 IC = 10 mA IC = 100 mA 0.3 IC = 500 mA −0.4 IC = 2.0 A 0.2 −0.2 0.1 −0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = −10 mA IC = −2.0 A IC = −100 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 IB, BASE CURRENT (mA) −50 −100−200 −500 Figure 6. MPS750, MPS751 Collector Saturation Region NPN 10 IC = −500 mA −0.3 Figure 5. MPS650, MPS651 Collector Saturation Region PNP −10 4.0 IC, COLLECTOR CURRENT TJ = 25°C −0.8 TJ = 25°C 0.7 −4.0 2.0 1.0 ms 1.0 0.5 0.2 TA = 25°C 0.1 0.05 100 ms −2.0 1.0 1.0 ms −1.0 MPS65 0 MPS65 1 −0.5 −0.2 TC = 25°C −0.1 −0.05 WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.02 0.01 PNP −1.0 2.0 5.0 10 20 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) −0.02 −0.01 −1.0 100 Figure 7. MPS650, MPS651 SOA, Safe Operating Area TA = 25°C MPS75 0 MPS75 1 100 ms TC = 25°C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −2.0 −5.0 −10 −20 −50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. MPS750, MPS751 SOA, Safe Operating Area http://onsemi.com 4 −100 MPS650, MPS651, NPN MPS750, MPS751, PNP ORDERING INFORMATION Device MPS650 MPS650G MPS650RLRA MPS650RLRAG MPS650ZL1 MPS650ZL1G MPS651 MPS651G MPS651RLRA Package Shipping † TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammunition TO−92 (Pb−Free) 2000 / Tape & Ammunition TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel MPS651RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPS651RLRBG TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammunition TO−92 (Pb−Free) 2000 / Tape & Ammunition TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammunition TO−92 (Pb−Free) 2000 / Tape & Ammunition TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammunition TO−92 (Pb−Free) 2000 / Tape & Ammunition TO−92 2000 / Tape & Ammunition TO−92 (Pb−Free) 2000 / Tape & Ammunition MPS651RLRM MPS651RLRMG MPS750 MPS750G MPS750RLRA MPS750RLRAG MPS750RLRP MPS750RLRPG MPS751 MPS751G MPS751RLRA MPS751RLRAG MPS751RLRP MPS751RLRPG MPS751ZL1 MPS751ZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MPS650, MPS651, NPN MPS750, MPS751, PNP PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C 1 N SECTION X−X INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MPS650/D