DMN2100UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 55 mΩ @ VGS = 4.5V • 70 mΩ @ VGS = 2.5V • 90 mΩ @ VGS = 1.8V • 130 mΩ @ VGS = 1.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standard for High Reliability • • • • • • SOT-26 6 D1 Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.015 grams (approximate) D D S D G 5 S1 4 D2 G1 1 S2 2 ESD PROTECTED D G2 3 TOP VIEW Maximum Ratings TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Thermal Characteristics Symbol VDSS VGSS ID IDM Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Units V V A A Value 900 139 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Static Drain-Source On-Resistance Value 20 ±8 3.3 13 Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.6 ⎯ 1.0 V mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 1.5A VGS = 1.5V, ID = 1.0A VDS =10V, ID = 6A VGS = 0V, IS = 2A RDS (ON) ⎯ 32 43 56 80 55 70 90 130 |Yfs| VSD ⎯ ⎯ 8 0.7 ⎯ 1.1 S V Ciss Coss Crss ⎯ ⎯ ⎯ 555 112 84 ⎯ ⎯ ⎯ pF pF pF Test Condition VDS = 10V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB, or minimum recommended pad layout with 2oz. copper pads. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMN2100UDM Document number: DS31186 Rev. 4 - 2 1 of 4 www.diodes.com January 2009 © Diodes Incorporated DMN2100UDM 10 10 VDS = 5V Pulsed 9 8 ID , DRAIN CURRENT (A) 8 NEW PRODUCT 6 4 2 7 6 5 4 TA = 150°C 3 TA = 85°C 2 1 0 0 0.5 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) T A = 25°C TA = -55°C 1 1.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 1.6 1.4 1.2 VGS = 1.8V VGS = 1.5V 0.1 1.0 VGS = 2.5V 0.8 0.01 0.01 0.6 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 0.8 Ciss ID = 250µA C CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 0.6 0.4 Coss Crss 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMN2100UDM Document number: DS31186 Rev. 4 - 2 2 of 4 www.diodes.com 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 20 January 2009 © Diodes Incorporated DMN2100UDM 10 IS, SOURCE CURRENT (A) TA = 150°C 0.1 TA = 125°C TA = 85°C 0.01 TA = 25°C 0.001 TA = -55°C 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 5) Part Number DMN2100UDM-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2N1 Date Code Key Year Code Month Code 2007 U Jan 1 YM NEW PRODUCT 1 2008 V Feb 2 Mar 3 2N1 = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) 2009 W Apr 4 May 5 2010 X Jun 6 Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D Package Outline Dimensions A B C H K J DMN2100UDM Document number: DS31186 Rev. 4 - 2 M D L 3 of 4 www.diodes.com SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm January 2009 © Diodes Incorporated DMN2100UDM Suggested Pad Layout NEW PRODUCT C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2100UDM Document number: DS31186 Rev. 4 - 2 4 of 4 www.diodes.com January 2009 © Diodes Incorporated