SPICE MODELS: DMN100 DMN100 Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · SC-59 Extremely Low On-Resistance: 170mW @ VGS = 4.5V A High Drain Current: 1.1A D Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits TOP VIEW Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability G ESD Protected Gate C S D E "Green" Device (Note 3) B · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Terminal Connections: See Diagram A 0.30 0.50 B 1.40 1.80 C 2.50 3.00 D 0.85 1.05 E 0.30 0.70 1.70 2.10 H H 2.70 3.10 J Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Max G M K Case: SC-59 Min G Mechanical Data · · Dim L Drain J ¾ 0.10 K 1.00 1.40 L 0.55 0.70 M 0.10 0.35 All Dimensions in mm Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Gate Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.008 grams (approximate) Gate Protection Diode Source ESD protected EQUIVALENT CIRCUIT Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol DMN100 Units VDSS 30 V VGSS ±20 V ID 1.1 4.0 A Pd 500 mW RqJA 250 K/W Tj, TSTG -55 to +150 °C 1. Pulse width £ 300ms, duty cycle £ 2%. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30049 Rev. 6 - 2 1 of 3 www.diodes.com DMN100 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS 30 Test Condition ¾ ¾ V VGS = 0V, ID = 250mA µA VDS = 24V, VGS = 0V VGS = ± 12V, VDS = 0V OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ Tj = 25°C @ Tj = 125°C Gate-Body Leakage IDSS ¾ ¾ 1.0 10 IGSS ¾ ¾ ± 100 nA VGS(th) 1.0 ¾ 3.0 V VDS = 10V, ID =1.0mA W VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A VDS = 10V, ID =0.5A ON CHARACTERISTICS (Note 1) Gate Threshold Voltage RDS (ON) ¾ ¾ 0.170 0.240 gFS 1.3 2.4 ¾ S Input Capacitance Ciss ¾ 150 ¾ pF Output Capacitance Coss ¾ 90 ¾ pF Reverse Transfer Capacitance Crss ¾ 30 ¾ pF Total Gate Charge Qg ¾ 5.5 ¾ nC Gate-to-Source Charge Qgs ¾ 0.8 ¾ nC Gate-to-Drain Charge Qgd ¾ 1.3 ¾ nC Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 25 ¾ ns Turn-On Rise Time tr ¾ 15 ¾ ns Turn-Off Fall Time tf ¾ 45 ¾ ns Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz VDS = 24V, ID = 1.0A, VGS = 10V SWITCHING CHARACTERISTICS VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50W SOURCE- DRAIN RATINGS (BODY DIODE) IS ¾ ¾ 0.54 A Pulse Source Current ISM ¾ ¾ 4.0 A Forward Voltage VSD ¾ ¾ 1.2 V IF = 1.0A, VGS = 0V trr ¾ 35 ¾ ns IF = 1.0A, di/dt = 50A/ms Continuous Source Current Reverse Recovery Time ¾ 1. Pulse width £ 300ms, duty cycle £ 2%. 1.0 4.0 VGS = 10V 5.0V 4.5V 4.0V 3.5V 3.5 3.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Notes: ID, DRAIN CURRENT (A) ¾ 2.5 3.0V 2.0 1.5 1.0 2.5V 0.5 VGS = 4.5V 0.1 VGS = 10V 0.01 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics DS30049 Rev. 6 - 2 0 1 2 4 3 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 2 of 3 www.diodes.com DMN100 4.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.30 0.25 0.20 VGS = 4.5V, RDS @ 0.5A 0.15 0.10 VGS = 10V, RDS @ 1.0A 0.05 0 -50 VGS = 10V TA = 25° C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 100 150 0 Tj, JUNCTION TEMPERATURE (° C) Fig. 3 On-Resistance vs Junction Temperature Ordering Information Notes: 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs Gate-Source Voltage (Note 4) Device Packaging Shipping DMN100-7-F SC-59 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. M11 YM Marking Information M11 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30049 Rev. 6 - 2 3 of 3 www.diodes.com DMN100