DMN2114SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • Mechanical Data • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) Case: SC-59 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SC-59 D Gate TOP VIEW ESD protected S G Gate Protection Diode Source TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Unit V V ID Value 20 ±12 1.2 4.0 Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Symbol Pd RθJA Value 500 250 Unit mW °C /W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Drain-Source Voltage Gate-Source Voltage Drain Current Thermal Characteristics Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Symbol VDSS VGSS Continuous Continuous Pulsed A @TA = 25°C unless otherwise specified @TA = 25°C unless otherwise specified @ Tj = 25°C Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) ⎯ ⎯ ⎯ 3.3 0.8 1.40 0.100 0.160 V ⎯ 1.1 S V VDS = 10V, ID = 1.0mA VGS = 4.5V, ID = 0.5A VGS = 2.5V, ID = 0.5A VDS = 10V, ID = 0.5A VGS = 0V, IS = 1.0A Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time |Yfs| VSD 0.7 ⎯ ⎯ ⎯ ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ 180 120 45 ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) tr tf ⎯ ⎯ ⎯ ⎯ 10 50 15 45 ⎯ ⎯ ⎯ ⎯ ns ns ns ns VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50Ω Notes: Ω 1. Pulse width ≤300μS, duty cycle ≤2%. 2. No purposefully added lead. 3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN2114SN Document number: DS30829 Rev. 4 - 2 1 of 4 www.diodes.com September 2007 © Diodes Incorporated DMN2114SN 4 5 T A = 25°C 3.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 3.0V 3 2.5V 2.0V 2 3 2.5 TA= 125°C 2 1.5 T A = 25°C 1 1 0 0 TA = -55°C 0.5 VGS = 1.5V 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 3 0 Fig. 1 Typical Output Characteristics 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 1 0.3 RDS(ON), STATIC DRAIN-SOURCE, ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE, ON-RESISTNACE (Ω) TJ = 25°C 0.25 0.2 0.15 0.1 ID = 0.5A 0.05 ID = 1.0A 0 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) 2.5V 0.1 4.5V 0.01 0 10 Fig. 3 On-Resistance vs. Gate Voltage 0.3 1 2 3 ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs. Drain Current 4 1.4 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), STATIC DRAIN-SOURCE, ON-RESISTANCE (Ω) NEW PRODUCT VDS = 10V 3V, 3.5V, 4V, 5V 4 0.25 0.2 ID = 1.0A ID = 0.5A VGS = 2.5V 0.15 ID = 0.5A, 1A 0.1 VGS = 4.5V 0.05 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Fig. 5 On-Resistance Variation with Temperature DMN2114SN Document number: DS30829 Rev. 4 - 2 2 of 4 www.diodes.com 1.2 VDS = 10V ID = 1mA 1 0.8 0.6 0.4 0.2 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Voltage vs. Temperature September 2007 © Diodes Incorporated DMN2114SN 1,000 4 f = 1MHz VGS = 0V TA = 25°C 3.5 VGS = 4.5V 3 C, CAPACITANCE (pF) 2.5V NEW PRODUCT 2.5 2 1.5 1 0V 0.5 Ciss Crss -4.5V 0 10 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 8 Typical Total Capacitance (Note 4) Part Number DMN2114SN-7 Notes: Coss 100 Case SC-59 Packaging 3000/Tape & Reel 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information NS2 Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 Mar 3 NS2 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2008 V Apr 4 May 5 2009 W Jun 6 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D Package Outline Dimensions A B C TOP VIEW G H K M N J D E DMN2114SN Document number: DS30829 Rev. 4 - 2 L SC-59 Dim Min Max A 0.35 0.50 B 1.50 1.70 C 2.70 3.00 D 0.95 E ⎯ ⎯ G 1.90 H 2.90 3.10 J 0.013 0.10 K 1.00 1.30 L 0.35 0.55 M 0.10 0.20 N 0.70 0.80 0° 8° α All Dimensions in mm 3 of 4 www.diodes.com September 2007 © Diodes Incorporated DMN2114SN Suggested Pad Layout Y NEW PRODUCT Z G C X Dimensions Value (in mm) Z 4.0 G 1.2 X 0.9 Y 1.4 C 2.6 E 0.95 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2114SN Document number: DS30829 Rev. 4 - 2 4 of 4 www.diodes.com September 2007 © Diodes Incorporated