MBRD5H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. Features •Guardring for Stress Protection •Low Forward Voltage •175°C Operating Junction Temperature •Epoxy Meets UL 94 V-0 @ 0.125 in •Short Heat Sink Tab Manufactured - Not Sheared! •This is a Pb-Free Device http://onsemi.com SCHOTTKY BARRIER RECTIFIER 5 AMPERES, 100 VOLTS 1 4 3 (Pin 1: No Connect) Mechanical Characteristics: •Case: Epoxy, Molded, Epoxy Meets UL 94 V-0 •Weight: 0.4 grams (approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds •Device Meets MSL1 Requirements •ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) MAXIMUM RATINGS Rating MARKING DIAGRAM 4 DPAK CASE 369C 1 2 3 Y WW B5100 G YWW B 5100G = Year = Work Week = Device Code = Pb-Free Package Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 171°C IF(AV) 5 A ORDERING INFORMATION Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 171°C IFRM 10 A See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 105 A TJ, Tstg -65 to +175 °C Operating Junction and Storage Temperature Range (Note 1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2007 December, 2007 - Rev. 2 1 Publication Order Number: MBRD5H100/D MBRD5H100T4G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit °C/W Thermal Resistance, - Junction-to-Case (Note 2) - Junction-to-Ambient (Note 2) RqJC RqJA 1.6 95.8 Symbol Value 2. When mounted using minimum recommended pad size on FR-4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 5 A, TJ = 25°C) (IF = 5 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) IR Unit V 0.71 0.60 4.5 3.5 mA mA 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device MBRD5H100T4G Package Shipping† DPAK (Pb-Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 100 100 10 1 150°C 25°C 125°C 0.1 0.1 0.2 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 150°C 25°C 125°C 0.1 0.1 0.2 0.4 0.6 0.7 0.8 0.9 1.0 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.1 1.2 100 1 125°C 0.01 0.001 25°C 0.0001 10 150°C 1 125°C 0.1 0.01 25°C 0.001 0.00001 0.0001 0 10 20 30 40 50 60 70 80 90 0 100 10 20 VR, REVERSE VOLTAGE (V) 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 10 I F(AV) , AVERAGE FORWARD CURRENT (A) 1200 TJ = 25°C f = 1 MHz 1000 C, CAPACITANCE (pF) 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 150°C 0.1 0.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Ir, REVERSE CURRENT (mA) Ir, REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBRD5H100T4G 800 600 400 200 0 0 20 40 60 80 100 9 8 RqJC = 1.6 °C/W dc 7 6 Square 5 4 3 2 1 0 145 150 155 160 165 170 175 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Current Derating, Case http://onsemi.com 3 180 5 P F(AV) , AVERAGE POWER DISSIPATION (W) I F(AV) , AVERAGE FORWARD CURRENT (A) MBRD5H100T4G RqJA = 95.8 °C/W 4 dc 3 Square Wave 2 1 0 0 100 R(t) (C/W) 10 1.0 20 40 60 80 100 120 140 160 22 20 18 Square Wave 16 14 12 dc 10 8 6 4 2 0 180 0 5 10 15 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Ambient Figure 8. Forward Power Dissipation 20 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction-to-Case http://onsemi.com 4 10 100 1000 MBRD5H100T4G PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369C ISSUE O -TC B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --0.89 1.27 3.93 --- T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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